IT8224660A0 - Processo di deposizione in fase chimica per produrre leghe amorfe fotosensibili e relativi dispositivi. - Google Patents

Processo di deposizione in fase chimica per produrre leghe amorfe fotosensibili e relativi dispositivi.

Info

Publication number
IT8224660A0
IT8224660A0 IT8224660A IT2466082A IT8224660A0 IT 8224660 A0 IT8224660 A0 IT 8224660A0 IT 8224660 A IT8224660 A IT 8224660A IT 2466082 A IT2466082 A IT 2466082A IT 8224660 A0 IT8224660 A0 IT 8224660A0
Authority
IT
Italy
Prior art keywords
deposition process
phase deposition
related devices
amorphous alloys
chemical phase
Prior art date
Application number
IT8224660A
Other languages
English (en)
Other versions
IT8224660A1 (it
IT1155420B (it
Inventor
L Melvin P Shaw
Arun Madan
Stanford R Ovshinsky
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of IT8224660A0 publication Critical patent/IT8224660A0/it
Publication of IT8224660A1 publication Critical patent/IT8224660A1/it
Application granted granted Critical
Publication of IT1155420B publication Critical patent/IT1155420B/it

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/705—Compositions containing chalcogenides, metals or alloys thereof, as photosensitive substances, e.g. photodope systems
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H10P14/22—
    • H10P14/24—
    • H10P14/2905—
    • H10P14/2921—
    • H10P14/3411—
    • H10P14/3412—
    • H10P14/3442—
    • H10P14/3444—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
IT24660/82A 1981-12-16 1982-12-09 Processo di deposizione in fase chimica per produrre leghe amorfe fotosensibili e relativi dispositivi IT1155420B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US33125981A 1981-12-16 1981-12-16

Publications (3)

Publication Number Publication Date
IT8224660A0 true IT8224660A0 (it) 1982-12-09
IT8224660A1 IT8224660A1 (it) 1984-06-09
IT1155420B IT1155420B (it) 1987-01-28

Family

ID=23293230

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24660/82A IT1155420B (it) 1981-12-16 1982-12-09 Processo di deposizione in fase chimica per produrre leghe amorfe fotosensibili e relativi dispositivi

Country Status (7)

Country Link
JP (1) JPS58144470A (it)
AU (1) AU9150482A (it)
DE (1) DE3244661A1 (it)
FR (1) FR2518122A1 (it)
GB (1) GB2111534A (it)
IT (1) IT1155420B (it)
NL (1) NL8204776A (it)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5997514A (ja) * 1982-11-22 1984-06-05 Agency Of Ind Science & Technol 太陽電池の製造法
ES8602301A1 (es) * 1983-07-18 1985-11-01 Energy Conversion Devices Inc Una aleacion amorfa mejorada de separacion de bandas estrecha, para aplicaciones fotovoltaicas
FR2557149B1 (fr) * 1983-12-27 1989-11-17 France Etat Procede et dispositif pour le depot, sur un support, d'une couche mince d'un materiau a partir d'un plasma reactif
JPS60191269A (ja) * 1984-03-13 1985-09-28 Sharp Corp 電子写真感光体製造装置
CA1232228A (en) * 1984-03-13 1988-02-02 Tatsuro Miyasato Coating film and method and apparatus for producing the same
DE3437120A1 (de) * 1984-10-10 1986-04-10 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen von halbleiterschichten auf halbleiterkoerpern oder zur eindiffusion von stoerstellen im halbleiterkoerper
US4596645A (en) * 1984-10-23 1986-06-24 California Institute Of Technology Reactively-sputtered zinc semiconductor films of high conductivity for heterojunction devices
EP0210724B1 (en) * 1985-06-05 1989-08-02 Plessey Overseas Limited Methods of depositing germanium carbide
US4816291A (en) * 1987-08-19 1989-03-28 The Regents Of The University Of California Process for making diamond, doped diamond, diamond-cubic boron nitride composite films
GB2213835B (en) * 1987-12-18 1992-07-08 Gen Electric Co Plc Deposition apparatus
JP2501118B2 (ja) * 1988-06-17 1996-05-29 忠弘 大見 半導体装置の製造方法
JPH02107757A (ja) * 1988-10-15 1990-04-19 Koji Hashimoto アモルファス超格子合金の作製法
US5180690A (en) * 1988-12-14 1993-01-19 Energy Conversion Devices, Inc. Method of forming a layer of doped crystalline semiconductor alloy material
US7659209B2 (en) 2001-11-14 2010-02-09 Canon Anelva Corporation Barrier metal film production method
TWI253478B (en) 2001-11-14 2006-04-21 Mitsubishi Heavy Ind Ltd Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
DE102019002631B4 (de) 2019-04-10 2021-12-23 Pascher + Heinz GmbH Umwandelbares Zweirad

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1534733A (fr) * 1967-04-12 1968-08-02 Radiotechnique Coprim Rtc Procédé et dispositifs de dépôt de couches minces mettant en oeuvre plusieurs décharges électriques
US3477936A (en) * 1967-06-29 1969-11-11 Ppg Industries Inc Sputtering of metals in an atmosphere of fluorine and oxygen
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
JPS5856249B2 (ja) * 1978-09-07 1983-12-14 松下電子工業株式会社 プラズマ反応による薄膜の製造方法
FR2461763A1 (fr) * 1979-07-20 1981-02-06 Commissariat Energie Atomique Procede d'elaboration de couches de silicium amorphe fluore par la methode de pulverisation cathodique

Also Published As

Publication number Publication date
IT8224660A1 (it) 1984-06-09
FR2518122A1 (fr) 1983-06-17
DE3244661A1 (de) 1983-07-21
GB2111534A (en) 1983-07-06
JPS58144470A (ja) 1983-08-27
NL8204776A (nl) 1983-07-18
AU9150482A (en) 1983-06-23
IT1155420B (it) 1987-01-28

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