IT7831082A0 - Fotoconduttore perfezionato. - Google Patents

Fotoconduttore perfezionato.

Info

Publication number
IT7831082A0
IT7831082A0 IT7831082A IT3108278A IT7831082A0 IT 7831082 A0 IT7831082 A0 IT 7831082A0 IT 7831082 A IT7831082 A IT 7831082A IT 3108278 A IT3108278 A IT 3108278A IT 7831082 A0 IT7831082 A0 IT 7831082A0
Authority
IT
Italy
Prior art keywords
improved photoconductor
photoconductor
improved
Prior art date
Application number
IT7831082A
Other languages
English (en)
Other versions
IT1160377B (it
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IT7831082A0 publication Critical patent/IT7831082A0/it
Application granted granted Critical
Publication of IT1160377B publication Critical patent/IT1160377B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • H01L31/03765—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table including AIVBIV compounds or alloys, e.g. SiGe, SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
IT31082/78A 1978-01-13 1978-12-21 Fotoconduttore perfezionato IT1160377B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/869,194 US4147667A (en) 1978-01-13 1978-01-13 Photoconductor for GaAs laser addressed devices

Publications (2)

Publication Number Publication Date
IT7831082A0 true IT7831082A0 (it) 1978-12-21
IT1160377B IT1160377B (it) 1987-03-11

Family

ID=25353100

Family Applications (1)

Application Number Title Priority Date Filing Date
IT31082/78A IT1160377B (it) 1978-01-13 1978-12-21 Fotoconduttore perfezionato

Country Status (7)

Country Link
US (1) US4147667A (it)
EP (1) EP0003237B1 (it)
JP (1) JPS5498588A (it)
AT (1) AT371949B (it)
CA (1) CA1111536A (it)
DE (1) DE2862265D1 (it)
IT (1) IT1160377B (it)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4565731A (en) * 1978-05-04 1986-01-21 Canon Kabushiki Kaisha Image-forming member for electrophotography
US4471042A (en) * 1978-05-04 1984-09-11 Canon Kabushiki Kaisha Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium
JPS54150995A (en) * 1978-05-19 1979-11-27 Hitachi Ltd Photo detector
EP0011083B1 (en) * 1978-07-26 1982-08-04 TDK Corporation Photoelectric device
FR2433871A1 (fr) * 1978-08-18 1980-03-14 Hitachi Ltd Dispositif de formation d'image a semi-conducteur
FR2441264A1 (fr) * 1978-11-08 1980-06-06 Hitachi Ltd Ecran sensible aux radiations
JPS5591885A (en) * 1978-12-28 1980-07-11 Canon Inc Amorphous silicon hydride photoconductive layer
JPS55127561A (en) * 1979-03-26 1980-10-02 Canon Inc Image forming member for electrophotography
US4365015A (en) * 1979-08-20 1982-12-21 Canon Kabushiki Kaisha Photosensitive member for electrophotography composed of a photoconductive amorphous silicon
JPS56152280A (en) * 1980-04-25 1981-11-25 Hitachi Ltd Light receiving surface
DE3117037C2 (de) * 1980-05-08 1987-05-14 Takao Sakai Osaka Kawamura Elektrophotografisches Aufzeichnungsmaterial
JPS6323858Y2 (it) * 1981-01-31 1988-06-30
JPS58102970A (ja) * 1981-12-16 1983-06-18 Konishiroku Photo Ind Co Ltd レ−ザ記録装置
JPS58502194A (ja) * 1981-12-31 1983-12-22 ウエスタ−ン　エレクトリツク　カムパニ−，インコ−ポレ−テツド 光学的記録媒体
US4491626A (en) * 1982-03-31 1985-01-01 Minolta Camera Kabushiki Kaisha Photosensitive member
US4490450A (en) * 1982-03-31 1984-12-25 Canon Kabushiki Kaisha Photoconductive member
JPS58189643A (ja) * 1982-03-31 1983-11-05 Minolta Camera Co Ltd 感光体
US4617246A (en) * 1982-11-04 1986-10-14 Canon Kabushiki Kaisha Photoconductive member of a Ge-Si layer and Si layer
JPS605023U (ja) * 1983-06-22 1985-01-14 株式会社日立ホームテック 電子レンジの出力切換装置
JPS605024U (ja) * 1983-06-22 1985-01-14 株式会社日立ホームテック 電子レンジの出力切換装置
JPS605025U (ja) * 1983-06-22 1985-01-14 株式会社日立ホームテック 電子レンジの出力切換装置
US4579797A (en) * 1983-10-25 1986-04-01 Canon Kabushiki Kaisha Photoconductive member with amorphous germanium and silicon regions, nitrogen and dopant
JPS61205948A (ja) * 1985-03-08 1986-09-12 Canon Inc レーザー光用の光受容部材
US4843439A (en) * 1985-08-28 1989-06-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Tailorable infrared sensing device with strain layer superlattice structure
JPH0750332B2 (ja) * 1985-09-03 1995-05-31 株式会社リコー 電子写真感光体
US4711857A (en) * 1986-08-28 1987-12-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Tailorable infrared sensing device with strain layer superlattice structure
JPH0441542Y2 (it) * 1987-12-28 1992-09-30
JPH07117764B2 (ja) * 1988-04-04 1995-12-18 シャープ株式会社 電子写真感光体の製造方法
JPH087448B2 (ja) * 1988-04-28 1996-01-29 シャープ株式会社 電子写真感光体の製造方法
JPH07117762B2 (ja) * 1988-06-28 1995-12-18 シャープ株式会社 電子写真感光体の製造方法
JPH07120060B2 (ja) * 1988-11-29 1995-12-20 シャープ株式会社 電子写真感光体の製造方法
JPH07117763B2 (ja) * 1988-06-30 1995-12-18 シャープ株式会社 電子写真感光体の製造方法
CN101550495B (zh) * 2008-04-02 2010-11-10 北京有色金属研究总院 一种硅锗合金材料的制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2953529A (en) * 1957-04-01 1960-09-20 Rca Corp Semiconductive radiation-sensitive device
US3105906A (en) * 1959-11-24 1963-10-01 Rca Corp Germanium silicon alloy semiconductor detector for infrared radiation
BE638315A (it) * 1961-06-09
US3979271A (en) * 1973-07-23 1976-09-07 Westinghouse Electric Corporation Deposition of solid semiconductor compositions and novel semiconductor materials
DD109094A1 (it) * 1973-08-22 1974-10-12

Also Published As

Publication number Publication date
ATA934578A (de) 1982-12-15
CA1111536A (en) 1981-10-27
IT1160377B (it) 1987-03-11
JPS5522950B2 (it) 1980-06-19
EP0003237B1 (de) 1983-05-18
DE2862265D1 (en) 1983-07-07
JPS5498588A (en) 1979-08-03
AT371949B (de) 1983-08-10
EP0003237A1 (de) 1979-08-08
US4147667A (en) 1979-04-03

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