IT202200004037A1 - Dispositivo hemt e relativo procedimento di fabbricazione - Google Patents

Dispositivo hemt e relativo procedimento di fabbricazione Download PDF

Info

Publication number
IT202200004037A1
IT202200004037A1 IT102022000004037A IT202200004037A IT202200004037A1 IT 202200004037 A1 IT202200004037 A1 IT 202200004037A1 IT 102022000004037 A IT102022000004037 A IT 102022000004037A IT 202200004037 A IT202200004037 A IT 202200004037A IT 202200004037 A1 IT202200004037 A1 IT 202200004037A1
Authority
IT
Italy
Prior art keywords
manufacturing procedure
hemt device
related manufacturing
hemt
procedure
Prior art date
Application number
IT102022000004037A
Other languages
English (en)
Inventor
Ferdinando Iucolano
Alessandro Chini
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT102022000004037A priority Critical patent/IT202200004037A1/it
Priority to US18/174,462 priority patent/US20230282727A1/en
Priority to EP23159048.0A priority patent/EP4239686A1/en
Publication of IT202200004037A1 publication Critical patent/IT202200004037A1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
IT102022000004037A 2022-03-03 2022-03-03 Dispositivo hemt e relativo procedimento di fabbricazione IT202200004037A1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT102022000004037A IT202200004037A1 (it) 2022-03-03 2022-03-03 Dispositivo hemt e relativo procedimento di fabbricazione
US18/174,462 US20230282727A1 (en) 2022-03-03 2023-02-24 Hemt device and manufacturing process thereof
EP23159048.0A EP4239686A1 (en) 2022-03-03 2023-02-28 Hemt device and manufacturing process thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT102022000004037A IT202200004037A1 (it) 2022-03-03 2022-03-03 Dispositivo hemt e relativo procedimento di fabbricazione

Publications (1)

Publication Number Publication Date
IT202200004037A1 true IT202200004037A1 (it) 2023-09-03

Family

ID=81580942

Family Applications (1)

Application Number Title Priority Date Filing Date
IT102022000004037A IT202200004037A1 (it) 2022-03-03 2022-03-03 Dispositivo hemt e relativo procedimento di fabbricazione

Country Status (3)

Country Link
US (1) US20230282727A1 (it)
EP (1) EP4239686A1 (it)
IT (1) IT202200004037A1 (it)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080179694A1 (en) * 2007-01-31 2008-07-31 Kazushi Nakazawa Semiconductor device and method for fabricating the same
US20130105812A1 (en) * 2011-10-31 2013-05-02 Hitachi, Ltd. Semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101604704B (zh) * 2008-06-13 2012-09-05 西安能讯微电子有限公司 Hemt器件及其制造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080179694A1 (en) * 2007-01-31 2008-07-31 Kazushi Nakazawa Semiconductor device and method for fabricating the same
US20130105812A1 (en) * 2011-10-31 2013-05-02 Hitachi, Ltd. Semiconductor device

Also Published As

Publication number Publication date
EP4239686A1 (en) 2023-09-06
US20230282727A1 (en) 2023-09-07

Similar Documents

Publication Publication Date Title
IT201700064147A1 (it) Transistore hemt normalmente spento con generazione selettiva del canale 2deg e relativo metodo di fabbricazione
JP1699856S (ja) 半導体素子
IT201900024292A1 (it) Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente
IT201700064155A1 (it) Transistore hemt con alta resistenza allo stress in stato spento e relativo metodo di fabbricazione
IT201900023475A1 (it) Transistore hemt includente regioni di field plate e relativo processo di fabbricazione
TWI799905B (zh) 半導體元件和半導體元件的製造方法
IT202200004037A1 (it) Dispositivo hemt e relativo procedimento di fabbricazione
IT201700113926A1 (it) Dispositivo mosfet di potenza e relativo procedimento di fabbricazione
IT202200002846A1 (it) Dispositivo hemt avente basse perdite di conduzione e relativo procedimento di fabbricazione
JP1712327S (ja) 半導体素子
DK4100619T3 (da) Ventilanordning
TWI801099B (zh) 半導體裝置及其製造方法
TWI800845B (zh) 半導體裝置及其製造方法
TWI800408B (zh) 半導體裝置及其製造方法
IT201700087174A1 (it) Dispositivo a semiconduttore e corrispondente metodo di fabbricazione di dispositivi a semiconduttore
IT201900021204A1 (it) Dispositivo mosfet in 4h-sic e relativo metodo di fabbricazione
JP1727399S (ja) 半導体素子
JP1727398S (ja) 半導体素子
JP1727400S (ja) 半導体素子
IT202200011231A1 (it) Componente di arredo e relativo procedimento di realizzo
IT202000001201A1 (it) Dispositivo posturale ottimizzato e relativo metodo
IT201900004697A1 (it) Dispositivo ungueale e relativo metodo di realizzazione ed applicazione.
IT202200008900A1 (it) Dispositivo a semiconduttore e corrispondenti procedimenti
TWI844037B (zh) 半導體裝置
DE112022001117A5 (de) Ventilbetätigungsvorrichtung