IT1391029B1 - Metodo per la fabbricazione di lingotto di polisilicio di grado solare con relativo apparato ad induzione - Google Patents

Metodo per la fabbricazione di lingotto di polisilicio di grado solare con relativo apparato ad induzione

Info

Publication number
IT1391029B1
IT1391029B1 ITTO2008A000540A ITTO20080540A IT1391029B1 IT 1391029 B1 IT1391029 B1 IT 1391029B1 IT TO2008A000540 A ITTO2008A000540 A IT TO2008A000540A IT TO20080540 A ITTO20080540 A IT TO20080540A IT 1391029 B1 IT1391029 B1 IT 1391029B1
Authority
IT
Italy
Prior art keywords
polysyllic
language
manufacture
induction apparatus
solar
Prior art date
Application number
ITTO2008A000540A
Other languages
English (en)
Inventor
Ji-Rong Yang
Yong-Qiang Hong
Zhi-Yi Su
Original Assignee
Jaco Solarsi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jaco Solarsi Ltd filed Critical Jaco Solarsi Ltd
Publication of ITTO20080540A1 publication Critical patent/ITTO20080540A1/it
Application granted granted Critical
Publication of IT1391029B1 publication Critical patent/IT1391029B1/it

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D7/00—Casting ingots, e.g. from ferrous metals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
    • Y02A40/00—Adaptation technologies in agriculture, forestry, livestock or agroalimentary production
    • Y02A40/90—Adaptation technologies in agriculture, forestry, livestock or agroalimentary production in food processing or handling, e.g. food conservation
    • Y02A40/963—Off-grid food refrigeration
    • Y02A40/966—Powered by renewable energy sources
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Silicon Compounds (AREA)
  • Manufacture And Refinement Of Metals (AREA)
ITTO2008A000540A 2007-07-17 2008-07-15 Metodo per la fabbricazione di lingotto di polisilicio di grado solare con relativo apparato ad induzione IT1391029B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN200710009238A CN100595352C (zh) 2007-07-17 2007-07-17 太阳能级多晶硅大锭的制备方法

Publications (2)

Publication Number Publication Date
ITTO20080540A1 ITTO20080540A1 (it) 2009-01-18
IT1391029B1 true IT1391029B1 (it) 2011-10-27

Family

ID=38991172

Family Applications (1)

Application Number Title Priority Date Filing Date
ITTO2008A000540A IT1391029B1 (it) 2007-07-17 2008-07-15 Metodo per la fabbricazione di lingotto di polisilicio di grado solare con relativo apparato ad induzione

Country Status (9)

Country Link
US (1) US20090020067A1 (it)
CN (1) CN100595352C (it)
BR (1) BRPI0801205A2 (it)
CA (1) CA2633964A1 (it)
DE (1) DE102008033346A1 (it)
FR (1) FR2918999A1 (it)
IT (1) IT1391029B1 (it)
NO (1) NO20081902L (it)
RU (1) RU2008128526A (it)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100861287B1 (ko) * 2008-01-25 2008-10-01 한국생산기술연구원 실리콘 분말을 이용하여 실리콘 성형체를 제조하는 방법 및 장치
CN101792143B (zh) * 2010-03-24 2011-12-21 姜学昭 提纯硅的方法
CN102094238A (zh) * 2010-09-28 2011-06-15 常州天合光能有限公司 降低铸锭多晶体内应力缺陷的方法
US8562740B2 (en) * 2010-11-17 2013-10-22 Silicor Materials Inc. Apparatus for directional solidification of silicon including a refractory material
US20130252011A1 (en) * 2011-09-14 2013-09-26 MEMC Singapore, Pte. Ltd. (UEN200614797D) Multi-Crystalline Silicon Ingot And Directional Solidification Furnace
US9352389B2 (en) * 2011-09-16 2016-05-31 Silicor Materials, Inc. Directional solidification system and method
JP5135467B1 (ja) * 2011-12-22 2013-02-06 シャープ株式会社 多結晶シリコンインゴットの製造方法
CN104583464A (zh) * 2012-06-25 2015-04-29 希利柯尔材料股份有限公司 用于纯化硅的耐火坩埚的表面的衬里以及使用该坩埚进行熔化和进一步定向凝固以纯化硅熔融体的方法
CN103072996B (zh) * 2013-02-04 2014-09-10 福建兴朝阳硅材料股份有限公司 一种电泳辅助的太阳能级多晶硅提纯方法
TWI643983B (zh) 2013-03-14 2018-12-11 美商希利柯爾材料股份有限公司 定向凝固系統及方法
CN103395789B (zh) * 2013-08-06 2015-05-06 青岛隆盛晶硅科技有限公司 多晶硅介质熔炼后初步定向凝固工艺
EP3247504B1 (fr) 2015-01-23 2018-12-19 Jacques Gerbron Dispositif de délivrance d'un produit par pulvérisation
RU2631372C1 (ru) * 2016-04-04 2017-09-21 Федеральное государственное бюджетное учреждение науки Институт физики твердого тела Российской академии наук (ИФТТ РАН) Способ получения кремниевых мишеней для магнетронного распыления
CN109319744A (zh) * 2017-07-31 2019-02-12 成都中建材光电材料有限公司 一种4n碲的制备方法
CN109052407A (zh) * 2018-08-22 2018-12-21 昆明理工大学 一种硅切割废料的回收与提纯方法
CN109292779A (zh) * 2018-10-19 2019-02-01 东北大学 一种用高硅废料造渣精炼生产高纯硅/硅合金的方法
CN109321975B (zh) * 2018-11-19 2020-09-08 永平县泰达废渣开发利用有限公司 单晶硅定向凝固引晶模块

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4101624A (en) * 1974-03-06 1978-07-18 Ppg Industries, Inc. Method of casting silicon
US4195067A (en) * 1977-11-21 1980-03-25 Union Carbide Corporation Process for the production of refined metallurgical silicon
CA2017719C (en) * 1990-05-29 1999-01-19 Zarlink Semiconductor Inc. Moisture-free sog process
CN1083396C (zh) * 1995-07-14 2002-04-24 昭和电工株式会社 高纯度硅的制造方法
CN1143605A (zh) * 1995-08-22 1997-02-26 李忠莆 精炼硅生产工艺
CA2232777C (en) * 1997-03-24 2001-05-15 Hiroyuki Baba Method for producing silicon for use in solar cells
GB9726191D0 (en) * 1997-12-11 1998-02-11 Philips Electronics Nv Ion implantation process
JP4159994B2 (ja) * 2002-02-04 2008-10-01 シャープ株式会社 シリコンの精製方法、シリコン精製用スラグおよび精製されたシリコン
CN1221470C (zh) * 2002-11-26 2005-10-05 郑智雄 高纯度硅的生产方法
CN1299983C (zh) * 2003-07-22 2007-02-14 龚炳生 光电级硅的制造方法
JP4632769B2 (ja) * 2004-12-09 2011-02-16 シャープ株式会社 シリコンの精製方法
JP4689373B2 (ja) * 2005-07-04 2011-05-25 シャープ株式会社 シリコンの再利用方法

Also Published As

Publication number Publication date
US20090020067A1 (en) 2009-01-22
CN100595352C (zh) 2010-03-24
CA2633964A1 (en) 2009-01-17
NO20081902L (no) 2009-01-19
RU2008128526A (ru) 2010-01-20
CN101092741A (zh) 2007-12-26
ITTO20080540A1 (it) 2009-01-18
DE102008033346A1 (de) 2009-05-07
FR2918999A1 (fr) 2009-01-23
BRPI0801205A2 (pt) 2010-04-20

Similar Documents

Publication Publication Date Title
IT1391029B1 (it) Metodo per la fabbricazione di lingotto di polisilicio di grado solare con relativo apparato ad induzione
BRPI0816314A2 (pt) Método de conversão
BRPI0919736A2 (pt) coletor solar
BR112012004593A2 (pt) "método"
BRPI0910671A2 (pt) destiladores solares
IT1394340B1 (it) Struttura per pannello solare e pannello solare relativo
IT1393061B1 (it) Procedimento integrato per la produzione di bio-olio da microrganismi
IT1393057B1 (it) Metodo per eliminare la vibrazione e relativo dispositivo
BRPI0816315A2 (pt) Método de conversão
BRPI0911708A2 (pt) seguidor solar
IT1399180B1 (it) Simulatore solare
BRPI0816914A2 (pt) Método de compensação de elevação
IT1397040B1 (it) Tubazione solare
BRPI0912629A2 (pt) concentrador para radiação solar
BRPI1008979A2 (pt) meio de fixação
ES1066600Y (es) Seguidor solar mecanico
IT1395610B1 (it) Inseguitore solare
IT1391769B1 (it) Apparato per la formatura di pannellature
ES1065162Y (es) Seguidor solar fotovoltaico
BRPI1012974A2 (pt) campo solar e metodo para montar o campo solar
IT1391776B1 (it) Procedimento per la preparazione di dexlansoprazolo
DK2125879T3 (da) Immunsystemmediator
IT1396036B1 (it) Configurazione strutturale di campo cimiteriale
SM200900035B (it) Metodo per la realizzazione di un apparato fotovoltaico ed apparato fotovoltaico ottenuto con tale metodo
ES1066095Y (es) Seguidor solar mejorado