IT1292010B1 - Ganasce per cristallo - Google Patents

Ganasce per cristallo

Info

Publication number
IT1292010B1
IT1292010B1 IT97MI001240A ITMI971240A IT1292010B1 IT 1292010 B1 IT1292010 B1 IT 1292010B1 IT 97MI001240 A IT97MI001240 A IT 97MI001240A IT MI971240 A ITMI971240 A IT MI971240A IT 1292010 B1 IT1292010 B1 IT 1292010B1
Authority
IT
Italy
Prior art keywords
jaws
crystal
crystal jaws
Prior art date
Application number
IT97MI001240A
Other languages
English (en)
Inventor
Winfried Schulmann
Helmut Kaiser
Franz Thimm
Original Assignee
Leybold Systems Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold Systems Gmbh filed Critical Leybold Systems Gmbh
Publication of ITMI971240A0 publication Critical patent/ITMI971240A0/it
Publication of ITMI971240A1 publication Critical patent/ITMI971240A1/it
Application granted granted Critical
Publication of IT1292010B1 publication Critical patent/IT1292010B1/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Polarising Elements (AREA)
  • Liquid Crystal Substances (AREA)
  • Developing Agents For Electrophotography (AREA)
IT97MI001240A 1996-05-28 1997-05-27 Ganasce per cristallo IT1292010B1 (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19621350 1996-05-28
DE19621695 1996-05-30

Publications (3)

Publication Number Publication Date
ITMI971240A0 ITMI971240A0 (it) 1997-05-27
ITMI971240A1 ITMI971240A1 (it) 1998-11-27
IT1292010B1 true IT1292010B1 (it) 1999-01-25

Family

ID=26026088

Family Applications (1)

Application Number Title Priority Date Filing Date
IT97MI001240A IT1292010B1 (it) 1996-05-28 1997-05-27 Ganasce per cristallo

Country Status (5)

Country Link
US (1) US5902397A (it)
JP (1) JPH1059796A (it)
KR (1) KR970073915A (it)
DE (2) DE29709172U1 (it)
IT (1) IT1292010B1 (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69926091T2 (de) * 1998-03-13 2006-04-20 Shin-Etsu Handotai Co., Ltd. Verfahren und Vorrichtung zum Messen der mechanischen Festigkeit des Halsteils eines Kristallkeimes
US6203614B1 (en) * 1999-05-28 2001-03-20 Memc Electronic Materials, Inc. Cable assembly for crystal puller
DE19939715B4 (de) * 1999-08-21 2008-07-24 Crystal Growing Systems Gmbh Auf einer Ziehwelle einer Kristallziehanlage angeordneter Greifer
DE19939714A1 (de) * 1999-08-21 2001-02-22 Leybold Systems Gmbh Auf einer Ziehwelle einer Kristallziehanlage angeordneter Greifer
DE10111953A1 (de) * 2001-03-12 2002-09-19 Crystal Growing Systems Gmbh Steuerbare Kristallunterstützung
WO2005044932A1 (en) * 2003-11-11 2005-05-19 Canon Kabushiki Kaisha An ink comprising a block copolymer dispersing agent having a hydrophilic and a hydrophobic segment and an ink-applying process and apparatus using the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2733896C2 (de) * 1977-07-27 1986-04-10 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Haltern des mit dem Keimkristall versehenen Stabendes beim tiegelfreien Zonenschmelzen von Halbleiterkristallstäben
US4190630A (en) * 1978-01-03 1980-02-26 Vsesojuzny Nauchno-Isslekovatelsky Institut Monokristallov Stsintillyatsionnykh Materialov I Osobo Chistykh Khimicheskikh Veschestv Apparatus for pulling single crystals from melt
US5173270A (en) * 1987-04-09 1992-12-22 Mitsubishi Materials Corporation Monocrystal rod pulled from a melt
JPH0631193B2 (ja) * 1988-10-27 1994-04-27 信越半導体株式会社 リチャージ装置
DE69112463T2 (de) * 1990-03-30 1996-02-15 Shinetsu Handotai Kk Vorrichtung zur Herstellung von Monokristallen nach dem Czochralski-Verfahren.
JP2605164B2 (ja) * 1990-05-28 1997-04-30 信越半導体 株式会社 単結晶棒搬出装置及びその搬送方法

Also Published As

Publication number Publication date
US5902397A (en) 1999-05-11
KR970073915A (ko) 1997-12-10
ITMI971240A0 (it) 1997-05-27
DE29709172U1 (de) 1997-07-31
JPH1059796A (ja) 1998-03-03
ITMI971240A1 (it) 1998-11-27
DE19721784A1 (de) 1997-12-04

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Legal Events

Date Code Title Description
0001 Granted