IT1258367B - Matrice di interruttori a mosfet - Google Patents

Matrice di interruttori a mosfet

Info

Publication number
IT1258367B
IT1258367B ITRM920134A ITRM920134A IT1258367B IT 1258367 B IT1258367 B IT 1258367B IT RM920134 A ITRM920134 A IT RM920134A IT RM920134 A ITRM920134 A IT RM920134A IT 1258367 B IT1258367 B IT 1258367B
Authority
IT
Italy
Prior art keywords
modules
input
pulse
output
matrix
Prior art date
Application number
ITRM920134A
Other languages
English (en)
Inventor
Thomas James Ninnis
Original Assignee
Litton Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Litton Systems Inc filed Critical Litton Systems Inc
Publication of ITRM920134A0 publication Critical patent/ITRM920134A0/it
Publication of ITRM920134A1 publication Critical patent/ITRM920134A1/it
Application granted granted Critical
Publication of IT1258367B publication Critical patent/IT1258367B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)

Abstract

Oggetto dell'invenzione è una matrice di interruttori a stato solido per sviluppare un impulso di potenza di uscita avente una elevata corrente ed una elevata tensione in risposta ad un piccolo impulso di ingresso, la quale comprende una pluralità di moduli interruttori a stato solido ed una unità di controllo. Ciascuno dei moduli presenta un piccolo segnale di ingresso, un grande segnale di ingresso ed una uscita. I moduli sono disposti in righe e colonne per cui i moduli di ciascuna riga sono collegati in parallelo ed i moduli di ciascuna colonna sono collegati in serie. Il dispositivo di controllo presenta un ingresso al quale viene applicato l'impulso di ingresso e sviluppa un impulso di commutazione per la applicazione all'ingresso dei segnali piccoli di ciascuno dei moduli in risposta all'impulso di ingresso. Ciascuno dei moduli diventa conduttore fra il suo ingresso per segnali grandi e la sua uscita in risposta a detto impulso di commutazione. Quando ciascun modulo è conduttore, la matrice è conduttrice fra l'ingresso per segnali gran di ciascuno dei moduli collegati in parallelo in una prima riga e l'uscita di ciascuno dei moduli collegato in parallelo nell'ultima riga per sviluppare l'impulso di potenza di uscita.
ITRM920134A 1991-03-01 1992-02-28 Matrice di interruttori a mosfet IT1258367B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/663,094 US5227781A (en) 1991-03-01 1991-03-01 Mosfet switch matrix

Publications (3)

Publication Number Publication Date
ITRM920134A0 ITRM920134A0 (it) 1992-02-28
ITRM920134A1 ITRM920134A1 (it) 1993-08-28
IT1258367B true IT1258367B (it) 1996-02-26

Family

ID=24660446

Family Applications (1)

Application Number Title Priority Date Filing Date
ITRM920134A IT1258367B (it) 1991-03-01 1992-02-28 Matrice di interruttori a mosfet

Country Status (8)

Country Link
US (1) US5227781A (it)
KR (1) KR100231653B1 (it)
CA (1) CA2061142C (it)
FR (1) FR2673494B1 (it)
GB (1) GB2254208B (it)
IL (1) IL100878A (it)
IT (1) IT1258367B (it)
TW (1) TW226481B (it)

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* Cited by examiner, † Cited by third party
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FR2718904B1 (fr) * 1994-04-14 1996-05-15 Commissariat Energie Atomique Commutateur rapide de haute tension à amplificateur d'impulsions.
FR2743222B1 (fr) * 1995-12-27 1998-02-13 Commissariat Energie Atomique Commutateur impulsionnel de puissance capable de fournir des impulsions de courant de forte intensite et de faible duree
US6346744B1 (en) 1999-09-14 2002-02-12 Sarnoff Corporation Integrated RF M×N switch matrix
US6930473B2 (en) 2001-08-23 2005-08-16 Fairchild Semiconductor Corporation Method and circuit for reducing losses in DC-DC converters
US7279773B2 (en) * 2005-03-15 2007-10-09 Delphi Technologies, Inc. Protection device for handling energy transients
DE102005052800A1 (de) * 2005-11-05 2007-08-16 Semikron Elektronik Gmbh & Co. Kg Treiberschaltungsanordnung zur Ansteuerung von leistungselektronischen Schaltungen
WO2009058695A2 (en) * 2007-10-30 2009-05-07 Northrop Grumman Systems Corporation Cool impact-ionization transistor and method for making same
US8183892B2 (en) 2009-06-05 2012-05-22 Fairchild Semiconductor Corporation Monolithic low impedance dual gate current sense MOSFET
CN106887950B (zh) * 2009-12-01 2020-12-11 天工方案公司 电压转换系统
US9236378B2 (en) 2010-08-11 2016-01-12 Sarda Technologies, Inc. Integrated switch devices
US8896034B1 (en) 2010-08-11 2014-11-25 Sarda Technologies, Inc. Radio frequency and microwave devices and methods of use
US8569811B1 (en) * 2010-08-11 2013-10-29 Sarda Technologies, Inc. Self clamping FET devices in circuits using transient sources
WO2012145475A1 (en) * 2011-04-21 2012-10-26 Converteam Technology Ltd. Gate drive circuit and associated method
US9136795B2 (en) 2011-05-19 2015-09-15 Skyworks Solutions, Inc. Variable switched DC-to-DC voltage converter
FR2988931B1 (fr) * 2012-03-30 2015-10-16 Schneider Toshiba Inverter Dispositif de commande employe dans un systeme d'alimentation electrique a decoupage
US9621034B2 (en) 2014-09-30 2017-04-11 Skyworks Solutions, Inc. Frequency modulation based voltage controller configuration
US9830809B2 (en) * 2015-08-31 2017-11-28 Evan Zinger Electrical device controller
US9774322B1 (en) 2016-06-22 2017-09-26 Sarda Technologies, Inc. Gate driver for depletion-mode transistors
JP7565079B2 (ja) * 2017-09-07 2024-10-10 ヴィスアイシー テクノロジーズ リミテッド 高電圧高速スイッチング装置
CN114498376B (zh) * 2021-12-30 2025-03-28 湖北三江航天红峰控制有限公司 一种电动伺服机构直流电源顺序输出配电盒

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3662250A (en) * 1970-11-12 1972-05-09 Gen Electric Thyristor overvoltage protective circuit
US3633046A (en) * 1970-04-28 1972-01-04 Gen Electric Parallel thyristors switching matrices
US3713104A (en) * 1971-06-29 1973-01-23 Gte Automatic Electric Lab Inc Electronic scanpoint matrix with switch monitoring
US3725863A (en) * 1971-12-17 1973-04-03 Bell Telephone Labor Inc Balanced semiconductor switching network circuit and construction
US3973253A (en) * 1972-03-27 1976-08-03 International Business Machines Corporation Floating addressing system for gas panel
US4367421A (en) * 1980-04-21 1983-01-04 Reliance Electric Company Biasing methods and circuits for series connected transistor switches
AU588020B2 (en) * 1985-03-04 1989-09-07 Raytheon Company High voltage solid state switch
DE3616097A1 (de) * 1986-05-13 1987-11-19 Bbc Brown Boveri & Cie Schaltungsanordnung zur ansteuerung von leistungs-feldeffekttransistoren
JPH03500321A (ja) * 1987-09-18 1991-01-24 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 高電圧スイツチ
EP0431846B1 (en) * 1989-12-04 1997-02-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor switching apparatus

Also Published As

Publication number Publication date
FR2673494B1 (fr) 1997-11-21
FR2673494A1 (fr) 1992-09-04
IL100878A (en) 1996-07-23
TW226481B (it) 1994-07-11
GB9204346D0 (en) 1992-04-08
ITRM920134A1 (it) 1993-08-28
US5227781A (en) 1993-07-13
KR100231653B1 (ko) 1999-11-15
CA2061142C (en) 2002-09-24
CA2061142A1 (en) 1992-09-02
KR920019081A (ko) 1992-10-22
IL100878A0 (en) 1992-11-15
ITRM920134A0 (it) 1992-02-28
GB2254208B (en) 1995-01-11
GB2254208A (en) 1992-09-30

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19960227