IT1192597B - Cella solare di silicio amorfo,a barriera schottky,con una sottile regione drogata adiacente alla barriera schottky di metallo - Google Patents
Cella solare di silicio amorfo,a barriera schottky,con una sottile regione drogata adiacente alla barriera schottky di metalloInfo
- Publication number
- IT1192597B IT1192597B IT30854/78A IT3085478A IT1192597B IT 1192597 B IT1192597 B IT 1192597B IT 30854/78 A IT30854/78 A IT 30854/78A IT 3085478 A IT3085478 A IT 3085478A IT 1192597 B IT1192597 B IT 1192597B
- Authority
- IT
- Italy
- Prior art keywords
- schottky
- barrier
- solar cell
- amorphous silicon
- region adjacent
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 title 2
- 229910021417 amorphous silicon Inorganic materials 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/901,256 US4163677A (en) | 1978-04-28 | 1978-04-28 | Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier |
Publications (2)
Publication Number | Publication Date |
---|---|
IT7830854A0 IT7830854A0 (it) | 1978-12-14 |
IT1192597B true IT1192597B (it) | 1988-04-20 |
Family
ID=25413829
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT30854/78A IT1192597B (it) | 1978-04-28 | 1978-12-14 | Cella solare di silicio amorfo,a barriera schottky,con una sottile regione drogata adiacente alla barriera schottky di metallo |
Country Status (9)
Country | Link |
---|---|
US (1) | US4163677A (it) |
JP (1) | JPS54143086A (it) |
CA (1) | CA1113594A (it) |
DE (1) | DE2854750C2 (it) |
FR (1) | FR2424634B1 (it) |
GB (1) | GB2020095B (it) |
HK (1) | HK77986A (it) |
IT (1) | IT1192597B (it) |
NL (1) | NL7812588A (it) |
Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4200473A (en) * | 1979-03-12 | 1980-04-29 | Rca Corporation | Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer |
US4282537A (en) * | 1979-08-20 | 1981-08-04 | Rca Corporation | Silicon MOS inductor |
JPS5913392B2 (ja) * | 1979-10-03 | 1984-03-29 | 極東開発工業株式会社 | タンクロ−リにおけるタンク頂部カバ− |
JPS5670675A (en) * | 1979-11-13 | 1981-06-12 | Shunpei Yamazaki | Manufacture of photoelectric converter |
US4291318A (en) * | 1979-12-03 | 1981-09-22 | Exxon Research & Engineering Co. | Amorphous silicon MIS device |
US4326126A (en) * | 1979-12-28 | 1982-04-20 | Bell Telephone Laboratories, Incorporated | High speed photodetector |
US4251289A (en) * | 1979-12-28 | 1981-02-17 | Exxon Research & Engineering Co. | Gradient doping in amorphous silicon |
JPS5795677A (en) * | 1980-12-03 | 1982-06-14 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon type photoelectric tranducer |
US4400409A (en) | 1980-05-19 | 1983-08-23 | Energy Conversion Devices, Inc. | Method of making p-doped silicon films |
US4292461A (en) * | 1980-06-20 | 1981-09-29 | International Business Machines Corporation | Amorphous-crystalline tandem solar cell |
JPS5760231U (it) * | 1980-09-27 | 1982-04-09 | ||
US4443651A (en) * | 1981-03-31 | 1984-04-17 | Rca Corporation | Series connected solar cells on a single substrate |
FR2503457B1 (fr) * | 1981-03-31 | 1987-01-23 | Rca Corp | Systeme de cellules solaires connectees en serie sur un substrat unique |
US4379943A (en) * | 1981-12-14 | 1983-04-12 | Energy Conversion Devices, Inc. | Current enhanced photovoltaic device |
DE3219606A1 (de) * | 1982-05-25 | 1983-12-01 | Siemens AG, 1000 Berlin und 8000 München | Schottky-leistungsdiode |
DE3234096A1 (de) * | 1982-09-14 | 1984-03-15 | Messerschmitt-Bölkow-Blohm GmbH, 8000 München | Bauelemente und arrays aus silizium zur detektion von infrarotem licht |
DE3308269A1 (de) * | 1983-03-09 | 1984-09-13 | Licentia Patent-Verwaltungs-Gmbh | Solarzelle |
US4589733A (en) * | 1984-06-29 | 1986-05-20 | Energy Conversion Devices, Inc. | Displays and subassemblies having improved pixel electrodes |
FR2579775B1 (fr) * | 1985-04-02 | 1987-05-15 | Thomson Csf | Procede de realisation d'elements de commande non lineaire pour ecran plat de visualisation electro-optique et ecran plat realise selon ce procede |
US5155565A (en) * | 1988-02-05 | 1992-10-13 | Minnesota Mining And Manufacturing Company | Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate |
US4954864A (en) * | 1988-12-13 | 1990-09-04 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Millimeter-wave monolithic diode-grid frequency multiplier |
US4982246A (en) * | 1989-06-21 | 1991-01-01 | General Electric Company | Schottky photodiode with silicide layer |
US5010018A (en) * | 1989-06-21 | 1991-04-23 | General Electric Company | Method for forming Schottky photodiodes |
US5019530A (en) * | 1990-04-20 | 1991-05-28 | International Business Machines Corporation | Method of making metal-insulator-metal junction structures with adjustable barrier heights |
US6121541A (en) * | 1997-07-28 | 2000-09-19 | Bp Solarex | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys |
US6077722A (en) * | 1998-07-14 | 2000-06-20 | Bp Solarex | Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts |
US6111189A (en) * | 1998-07-28 | 2000-08-29 | Bp Solarex | Photovoltaic module framing system with integral electrical raceways |
US20030073302A1 (en) * | 2001-10-12 | 2003-04-17 | Reflectivity, Inc., A California Corporation | Methods for formation of air gap interconnects |
US7645933B2 (en) * | 2005-03-02 | 2010-01-12 | Wisconsin Alumni Research Foundation | Carbon nanotube Schottky barrier photovoltaic cell |
US20080047602A1 (en) * | 2006-08-22 | 2008-02-28 | Guardian Industries Corp. | Front contact with high-function TCO for use in photovoltaic device and method of making same |
US20080047603A1 (en) * | 2006-08-24 | 2008-02-28 | Guardian Industries Corp. | Front contact with intermediate layer(s) adjacent thereto for use in photovoltaic device and method of making same |
US20080302414A1 (en) * | 2006-11-02 | 2008-12-11 | Den Boer Willem | Front electrode for use in photovoltaic device and method of making same |
US20080105293A1 (en) * | 2006-11-02 | 2008-05-08 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
US7964788B2 (en) * | 2006-11-02 | 2011-06-21 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
US8203073B2 (en) * | 2006-11-02 | 2012-06-19 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
US20080105299A1 (en) * | 2006-11-02 | 2008-05-08 | Guardian Industries Corp. | Front electrode with thin metal film layer and high work-function buffer layer for use in photovoltaic device and method of making same |
US20080178932A1 (en) * | 2006-11-02 | 2008-07-31 | Guardian Industries Corp. | Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same |
US20080105298A1 (en) * | 2006-11-02 | 2008-05-08 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
US8012317B2 (en) * | 2006-11-02 | 2011-09-06 | Guardian Industries Corp. | Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same |
US8076571B2 (en) * | 2006-11-02 | 2011-12-13 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
US8334452B2 (en) | 2007-01-08 | 2012-12-18 | Guardian Industries Corp. | Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like |
US20080169021A1 (en) * | 2007-01-16 | 2008-07-17 | Guardian Industries Corp. | Method of making TCO front electrode for use in photovoltaic device or the like |
US20080223430A1 (en) * | 2007-03-14 | 2008-09-18 | Guardian Industries Corp. | Buffer layer for front electrode structure in photovoltaic device or the like |
US20080308146A1 (en) * | 2007-06-14 | 2008-12-18 | Guardian Industries Corp. | Front electrode including pyrolytic transparent conductive coating on textured glass substrate for use in photovoltaic device and method of making same |
US7888594B2 (en) * | 2007-11-20 | 2011-02-15 | Guardian Industries Corp. | Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index |
US20090194157A1 (en) * | 2008-02-01 | 2009-08-06 | Guardian Industries Corp. | Front electrode having etched surface for use in photovoltaic device and method of making same |
US20090194155A1 (en) * | 2008-02-01 | 2009-08-06 | Guardian Industries Corp. | Front electrode having etched surface for use in photovoltaic device and method of making same |
US8551558B2 (en) * | 2008-02-29 | 2013-10-08 | International Business Machines Corporation | Techniques for enhancing efficiency of photovoltaic devices using high-aspect-ratio nanostructures |
US8022291B2 (en) * | 2008-10-15 | 2011-09-20 | Guardian Industries Corp. | Method of making front electrode of photovoltaic device having etched surface and corresponding photovoltaic device |
EP2421050A1 (en) * | 2009-04-15 | 2012-02-22 | Sunovel (Suzhou) Technologies Limited | Thin film of solar battery structure, thin film of solar battery array and manufacturing method thereof |
US20110168252A1 (en) * | 2009-11-05 | 2011-07-14 | Guardian Industries Corp. | Textured coating with etching-blocking layer for thin-film solar cells and/or methods of making the same |
US20110186120A1 (en) * | 2009-11-05 | 2011-08-04 | Guardian Industries Corp. | Textured coating with various feature sizes made by using multiple-agent etchant for thin-film solar cells and/or methods of making the same |
US8502066B2 (en) * | 2009-11-05 | 2013-08-06 | Guardian Industries Corp. | High haze transparent contact including insertion layer for solar cells, and/or method of making the same |
US8115097B2 (en) | 2009-11-19 | 2012-02-14 | International Business Machines Corporation | Grid-line-free contact for a photovoltaic cell |
WO2011105430A1 (ja) * | 2010-02-23 | 2011-09-01 | 京セラ株式会社 | ドーパント材、半導体基板、太陽電池素子、およびドーパント材の製造方法 |
JP5269010B2 (ja) * | 2010-08-17 | 2013-08-21 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US9099578B2 (en) | 2012-06-04 | 2015-08-04 | Nusola, Inc. | Structure for creating ohmic contact in semiconductor devices and methods for manufacture |
WO2014145339A1 (en) * | 2013-03-15 | 2014-09-18 | Nusola Inc. | Hybrid-transparent electrode assembly for photovoltaic cell manufacturing |
US20140360584A1 (en) * | 2013-06-07 | 2014-12-11 | National Dong Hwa University | Manufacturing method of solar cell |
DE102015102055A1 (de) * | 2015-01-16 | 2016-07-21 | Infineon Technologies Ag | Verfahren zum Bearbeiten einer Halbleiteroberfläche |
US10090420B2 (en) | 2016-01-22 | 2018-10-02 | Solar Junction Corporation | Via etch method for back contact multijunction solar cells |
US9680035B1 (en) | 2016-05-27 | 2017-06-13 | Solar Junction Corporation | Surface mount solar cell with integrated coverglass |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
AU503228B2 (en) * | 1975-07-28 | 1979-08-30 | Rca Corp. | Semiconductor device |
CA1078078A (en) * | 1976-03-22 | 1980-05-20 | David E. Carlson | Schottky barrier semiconductor device and method of making same |
US4196438A (en) * | 1976-09-29 | 1980-04-01 | Rca Corporation | Article and device having an amorphous silicon containing a halogen and method of fabrication |
US4126150A (en) * | 1977-03-28 | 1978-11-21 | Rca Corporation | Photovoltaic device having increased absorption efficiency |
IT1092849B (it) * | 1977-03-28 | 1985-07-12 | Rca Corp | Dispositivo fotovoltaico presentante una elevata efficienza di assorbimento |
US4117506A (en) * | 1977-07-28 | 1978-09-26 | Rca Corporation | Amorphous silicon photovoltaic device having an insulating layer |
-
1978
- 1978-04-28 US US05/901,256 patent/US4163677A/en not_active Expired - Lifetime
- 1978-10-30 CA CA314,697A patent/CA1113594A/en not_active Expired
- 1978-12-14 IT IT30854/78A patent/IT1192597B/it active
- 1978-12-19 DE DE2854750A patent/DE2854750C2/de not_active Expired - Fee Related
- 1978-12-20 GB GB7849183A patent/GB2020095B/en not_active Expired
- 1978-12-22 FR FR7836100A patent/FR2424634B1/fr not_active Expired
- 1978-12-22 JP JP16089478A patent/JPS54143086A/ja active Granted
- 1978-12-27 NL NL7812588A patent/NL7812588A/xx not_active Application Discontinuation
-
1986
- 1986-10-16 HK HK779/86A patent/HK77986A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
JPS54143086A (en) | 1979-11-07 |
FR2424634A1 (fr) | 1979-11-23 |
US4163677A (en) | 1979-08-07 |
NL7812588A (nl) | 1979-10-30 |
HK77986A (en) | 1986-10-24 |
DE2854750A1 (de) | 1979-11-08 |
JPS6138870B2 (it) | 1986-09-01 |
CA1113594A (en) | 1981-12-01 |
FR2424634B1 (fr) | 1985-10-18 |
DE2854750C2 (de) | 1994-01-13 |
GB2020095B (en) | 1982-07-28 |
GB2020095A (en) | 1979-11-07 |
IT7830854A0 (it) | 1978-12-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT1192597B (it) | Cella solare di silicio amorfo,a barriera schottky,con una sottile regione drogata adiacente alla barriera schottky di metallo | |
IT7926484A0 (it) | Cella solare di silicio amorfo incorporante un sottile strato di isolamento e un sottile strato drogato. | |
AT368274B (de) | Tragstruktur fuer reflektoren, solarzellen oder solarzellentraeger | |
NL187042B (nl) | Fotovoltaische zonnecel. | |
IT1193188B (it) | Modulo di celle solari | |
IT1079881B (it) | Gruppo collettore di energia solare | |
IT1086761B (it) | Collettore solare piato | |
IT1149988B (it) | Cella solare a perdita ridotta | |
AU498057B2 (en) | High efficiency selenium heterojunction solar cells | |
IT1076574B (it) | Collettore di energia solare | |
IT1084218B (it) | Collettore di energia solare | |
ES518107A0 (es) | Procedimiento de fabricacion de un dispositivo semi-conductor, en particular de una celula solar fotovoltaica. | |
IT7927500A0 (it) | Celle solari di silicio amorfo con giunzioni in tandem. | |
IT1164528B (it) | Cella solare di silicio | |
IT1083135B (it) | Collettore di energia solare | |
IT7923934A0 (it) | Struttura di collettore solare. | |
IT1085804B (it) | Collettore di energia solare | |
IT8025051A0 (it) | Cella solare a strato semiconduttore. | |
IT8026379A0 (it) | Dispositivo fotovoltaico, di silicio amorfo, in grado di fornire una maggior tensione a circuito aperto. | |
IT7824448A0 (it) | Collettore di radiazione solare. | |
IT1099969B (it) | Collettore di radiazione solare a concentrazione di flusso,di elevato rendimento | |
IT1111034B (it) | Collettore di energia solare | |
IT1079226B (it) | Collettore solare | |
IT1149264B (it) | Cella solare perfezionata | |
IT1085736B (it) | Collettore solare |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19931229 |