IT1147064B - Procedimento per produrre un dispositivo a semiconduttore in uno strato epitassiale simulato - Google Patents
Procedimento per produrre un dispositivo a semiconduttore in uno strato epitassiale simulatoInfo
- Publication number
- IT1147064B IT1147064B IT49502/80A IT4950280A IT1147064B IT 1147064 B IT1147064 B IT 1147064B IT 49502/80 A IT49502/80 A IT 49502/80A IT 4950280 A IT4950280 A IT 4950280A IT 1147064 B IT1147064 B IT 1147064B
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- producing
- semiconductor device
- epitaxial layer
- simulated epitaxial
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
- H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Ceramic Engineering (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US6768679A | 1979-08-20 | 1979-08-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8049502A0 IT8049502A0 (it) | 1980-08-14 |
IT1147064B true IT1147064B (it) | 1986-11-19 |
Family
ID=22077689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT49502/80A IT1147064B (it) | 1979-08-20 | 1980-08-14 | Procedimento per produrre un dispositivo a semiconduttore in uno strato epitassiale simulato |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5630766A (ja) |
CA (1) | CA1131797A (ja) |
DE (1) | DE3027197A1 (ja) |
FR (1) | FR2463825A1 (ja) |
GB (1) | GB2056765A (ja) |
IT (1) | IT1147064B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2156383A (en) * | 1984-02-06 | 1985-10-09 | Plessey Co Plc | Infra-red material structures |
JPH02109158U (ja) * | 1989-02-10 | 1990-08-30 | ||
JPH0338044A (ja) * | 1989-07-05 | 1991-02-19 | Toshiba Corp | 半導体装置の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL302630A (ja) * | 1963-01-18 | 1900-01-01 | ||
US3810791A (en) * | 1970-08-03 | 1974-05-14 | Texas Instruments Inc | Process for the fabrication of semiconductor materials |
US3876472A (en) * | 1974-04-15 | 1975-04-08 | Rca Corp | Method of achieving semiconductor substrates having similar surface resistivity |
US3945856A (en) * | 1974-07-15 | 1976-03-23 | Ibm Corporation | Method of ion implantation through an electrically insulative material |
JPS6051275B2 (ja) * | 1975-10-30 | 1985-11-13 | ソニー株式会社 | 半導体装置の製造方法 |
US4055884A (en) * | 1976-12-13 | 1977-11-01 | International Business Machines Corporation | Fabrication of power field effect transistors and the resulting structures |
-
1980
- 1980-03-24 CA CA348,272A patent/CA1131797A/en not_active Expired
- 1980-04-22 GB GB8013170A patent/GB2056765A/en not_active Withdrawn
- 1980-06-23 FR FR8013899A patent/FR2463825A1/fr active Granted
- 1980-07-18 DE DE19803027197 patent/DE3027197A1/de not_active Withdrawn
- 1980-07-23 JP JP10001280A patent/JPS5630766A/ja active Pending
- 1980-08-14 IT IT49502/80A patent/IT1147064B/it active
Also Published As
Publication number | Publication date |
---|---|
IT8049502A0 (it) | 1980-08-14 |
JPS5630766A (en) | 1981-03-27 |
DE3027197A1 (de) | 1981-03-19 |
CA1131797A (en) | 1982-09-14 |
GB2056765A (en) | 1981-03-18 |
FR2463825B1 (ja) | 1982-12-10 |
FR2463825A1 (fr) | 1981-02-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970827 |