IT1134949B - Cella di memoria a condensatore ad autorinfresco - Google Patents

Cella di memoria a condensatore ad autorinfresco

Info

Publication number
IT1134949B
IT1134949B IT19020/81A IT1902081A IT1134949B IT 1134949 B IT1134949 B IT 1134949B IT 19020/81 A IT19020/81 A IT 19020/81A IT 1902081 A IT1902081 A IT 1902081A IT 1134949 B IT1134949 B IT 1134949B
Authority
IT
Italy
Prior art keywords
refreshing
self
memory cell
condenser memory
condenser
Prior art date
Application number
IT19020/81A
Other languages
English (en)
Italian (it)
Other versions
IT8119020A0 (it
Inventor
Harry Joseph Boll
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IT8119020A0 publication Critical patent/IT8119020A0/it
Application granted granted Critical
Publication of IT1134949B publication Critical patent/IT1134949B/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
IT19020/81A 1980-01-07 1981-01-06 Cella di memoria a condensatore ad autorinfresco IT1134949B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/109,777 US4292677A (en) 1980-01-07 1980-01-07 Self-refreshed capacitor memory cell

Publications (2)

Publication Number Publication Date
IT8119020A0 IT8119020A0 (it) 1981-01-06
IT1134949B true IT1134949B (it) 1986-08-20

Family

ID=22329511

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19020/81A IT1134949B (it) 1980-01-07 1981-01-06 Cella di memoria a condensatore ad autorinfresco

Country Status (12)

Country Link
US (1) US4292677A (US07829113-20101109-C00009.png)
JP (1) JPS56101695A (US07829113-20101109-C00009.png)
BE (1) BE886964A (US07829113-20101109-C00009.png)
CA (1) CA1135853A (US07829113-20101109-C00009.png)
DD (1) DD156857A5 (US07829113-20101109-C00009.png)
DE (1) DE3100129A1 (US07829113-20101109-C00009.png)
ES (1) ES498280A0 (US07829113-20101109-C00009.png)
FR (1) FR2474742A1 (US07829113-20101109-C00009.png)
GB (1) GB2067867B (US07829113-20101109-C00009.png)
IT (1) IT1134949B (US07829113-20101109-C00009.png)
NL (1) NL8100020A (US07829113-20101109-C00009.png)
SE (1) SE8009001L (US07829113-20101109-C00009.png)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4413329A (en) * 1980-12-24 1983-11-01 International Business Machines Corporation Dynamic memory cell
DE3235835A1 (de) * 1982-09-28 1984-03-29 Siemens AG, 1000 Berlin und 8000 München Halbleiter-speicherzelle
US5003361A (en) * 1987-08-31 1991-03-26 At&T Bell Laboratories Active dynamic memory cell
EP1131824B1 (de) 1998-09-30 2003-03-12 Infineon Technologies AG Single-port speicherzelle
US6768668B2 (en) * 2001-06-12 2004-07-27 Infineon Technologies Aktiengesellschaft Converting volatile memory to non-volatile memory
US6686729B1 (en) 2002-10-15 2004-02-03 Texas Instruments Incorporated DC/DC switching regulator having reduced switching loss

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4030083A (en) * 1975-04-04 1977-06-14 Bell Telephone Laboratories, Incorporated Self-refreshed capacitor memory cell
US4122550A (en) * 1978-02-08 1978-10-24 Intel Corporation Low power random access memory with self-refreshing cells
US4203159A (en) * 1978-10-05 1980-05-13 Wanlass Frank M Pseudostatic electronic memory

Also Published As

Publication number Publication date
ES8205074A1 (es) 1982-06-01
GB2067867A (en) 1981-07-30
NL8100020A (nl) 1981-08-03
ES498280A0 (es) 1982-06-01
BE886964A (fr) 1981-05-04
DD156857A5 (de) 1982-09-22
FR2474742B1 (US07829113-20101109-C00009.png) 1984-01-27
GB2067867B (en) 1983-10-26
IT8119020A0 (it) 1981-01-06
US4292677A (en) 1981-09-29
FR2474742A1 (fr) 1981-07-31
SE8009001L (sv) 1981-07-08
CA1135853A (en) 1982-11-16
DE3100129A1 (de) 1981-11-19
JPS56101695A (en) 1981-08-14

Similar Documents

Publication Publication Date Title
IT1115344B (it) Cella di memoria capacitiva perfezionata
IT8025973A0 (it) Cella di memoria perfezionata.
DE3176699D1 (de) Non-volatile semiconductor memory cell
DE3170944D1 (de) Non-volatile dynamic random access memory cell
JPS5587385A (en) Memory cell
IT8322980A0 (it) Memoria a semiconduttori a celle di memoria dinamica.
KR880700451A (ko) Dram 셀용 고성능 트렌치 커패시터
IT1134949B (it) Cella di memoria a condensatore ad autorinfresco
BR7701807A (pt) Memoria de armazenamento em capacitor
IT1056928B (it) Cella di memoria
IT1149981B (it) Cella di memoria a transistori con aumentata immunita' dai disturbi
JPS55146693A (en) Bistable semiconductor memory cell
IT8219006A0 (it) Cella di refrigerazione perfezionata.
DE3174565D1 (de) Non-volatile static semiconductor memory cell
GB2088633B (en) Capacitor memory cell
IT8050099A0 (it) Cella fotoelettrochimica autoreversibile
JPS52100942A (en) Memory cell
JPS5323529A (en) Twooport random access memory cell
NL7709822A (nl) Geheugencel.
DE3850048D1 (de) Speicherzellenzugriff.
DE3064991D1 (en) One transistor-one capacitor memory cell
JPS5633882A (en) Nonnvolatile memory cell
JPS5353277A (en) Memory cell
NL7805065A (nl) Halfgeleidergeheugencel.
IT1134235B (it) Complesso di celle di memorizzazione per una memoria statica