IT1110037B - Struttura ad invertitore,ad elementi mos complementari - Google Patents

Struttura ad invertitore,ad elementi mos complementari

Info

Publication number
IT1110037B
IT1110037B IT19466/79A IT1946679A IT1110037B IT 1110037 B IT1110037 B IT 1110037B IT 19466/79 A IT19466/79 A IT 19466/79A IT 1946679 A IT1946679 A IT 1946679A IT 1110037 B IT1110037 B IT 1110037B
Authority
IT
Italy
Prior art keywords
complementary mos
inverter structure
mos elements
elements
inverter
Prior art date
Application number
IT19466/79A
Other languages
English (en)
Other versions
IT7919466A0 (it
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT7919466A0 publication Critical patent/IT7919466A0/it
Application granted granted Critical
Publication of IT1110037B publication Critical patent/IT1110037B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Thin Film Transistor (AREA)
IT19466/79A 1978-01-30 1979-01-19 Struttura ad invertitore,ad elementi mos complementari IT1110037B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/873,593 US4178605A (en) 1978-01-30 1978-01-30 Complementary MOS inverter structure

Publications (2)

Publication Number Publication Date
IT7919466A0 IT7919466A0 (it) 1979-01-19
IT1110037B true IT1110037B (it) 1985-12-23

Family

ID=25361949

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19466/79A IT1110037B (it) 1978-01-30 1979-01-19 Struttura ad invertitore,ad elementi mos complementari

Country Status (5)

Country Link
US (1) US4178605A (it)
JP (2) JPS54114088A (it)
DE (1) DE2902368A1 (it)
GB (1) GB2013396B (it)
IT (1) IT1110037B (it)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54161894A (en) * 1978-06-13 1979-12-21 Toshiba Corp Manufacture of semiconductor device
US4489340A (en) * 1980-02-04 1984-12-18 Nippon Telegraph & Telephone Public Corporation PNPN Light sensitive semiconductor switch with phototransistor connected across inner base regions
JPS5846193B2 (ja) * 1980-07-15 1983-10-14 株式会社東芝 半導体装置
JPS58222558A (ja) * 1982-06-18 1983-12-24 Hitachi Ltd 半導体装置
JPS6065547A (ja) * 1983-09-20 1985-04-15 Sharp Corp 半導体装置
NL8303441A (nl) * 1983-10-07 1985-05-01 Philips Nv Geintegreerde schakeling met komplementaire veldeffekttransistors.
US4821085A (en) * 1985-05-01 1989-04-11 Texas Instruments Incorporated VLSI local interconnect structure
US4811078A (en) * 1985-05-01 1989-03-07 Texas Instruments Incorporated Integrated circuit device and process with tin capacitors
CN1034533C (zh) * 1985-05-01 1997-04-09 得克萨斯仪器公司 超大规模集成电路静态随机存储器
US4804636A (en) * 1985-05-01 1989-02-14 Texas Instruments Incorporated Process for making integrated circuits having titanium nitride triple interconnect
US4975756A (en) * 1985-05-01 1990-12-04 Texas Instruments Incorporated SRAM with local interconnect
EP0251682A3 (en) * 1986-06-25 1989-12-06 Hewlett-Packard Company Integrated bipolar-mos device
US5028564A (en) * 1989-04-27 1991-07-02 Chang Chen Chi P Edge doping processes for mesa structures in SOS and SOI devices
JPH11338439A (ja) 1998-03-27 1999-12-10 Semiconductor Energy Lab Co Ltd 半導体表示装置の駆動回路および半導体表示装置
US6235630B1 (en) * 1998-08-19 2001-05-22 Micron Technology, Inc. Silicide pattern structures and methods of fabricating the same
KR100275965B1 (ko) * 1999-01-22 2000-12-15 김영환 반도체 장치의 제조방법
US6426534B1 (en) 2000-05-01 2002-07-30 Xilinx, Inc. Methods and circuits employing threshold voltages for mask-alignment detection
JP2004253541A (ja) * 2003-02-19 2004-09-09 Ricoh Co Ltd 半導体装置
US8067287B2 (en) 2008-02-25 2011-11-29 Infineon Technologies Ag Asymmetric segmented channel transistors
SE533026C2 (sv) * 2008-04-04 2010-06-08 Klas-Haakan Eklund Fälteffekttransistor med isolerad gate seriekopplad med en JFET
US10608624B2 (en) * 2017-05-25 2020-03-31 Solaredge Technologies Ltd. Efficient switching circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436622A (en) * 1966-12-20 1969-04-01 Texas Instruments Inc Compound channel insulated gate triode
US3641405A (en) * 1967-10-13 1972-02-08 Gen Electric Field-effect transistors with superior passivating films and method of making same
FR2121935A5 (it) * 1971-01-12 1972-08-25 Sescosem
JPS5145438B1 (it) * 1971-06-25 1976-12-03
US3872491A (en) * 1973-03-08 1975-03-18 Sprague Electric Co Asymmetrical dual-gate FET
US3898105A (en) * 1973-10-25 1975-08-05 Mostek Corp Method for making FET circuits
US4052229A (en) * 1976-06-25 1977-10-04 Intel Corporation Process for preparing a substrate for mos devices of different thresholds
US4078947A (en) * 1976-08-05 1978-03-14 International Business Machines Corporation Method for forming a narrow channel length MOS field effect transistor

Also Published As

Publication number Publication date
GB2013396B (en) 1982-06-03
GB2013396A (en) 1979-08-08
JPS59189345U (ja) 1984-12-15
DE2902368A1 (de) 1979-08-02
JPS54114088A (en) 1979-09-05
US4178605A (en) 1979-12-11
IT7919466A0 (it) 1979-01-19

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