IT1110037B - Struttura ad invertitore,ad elementi mos complementari - Google Patents
Struttura ad invertitore,ad elementi mos complementariInfo
- Publication number
- IT1110037B IT1110037B IT19466/79A IT1946679A IT1110037B IT 1110037 B IT1110037 B IT 1110037B IT 19466/79 A IT19466/79 A IT 19466/79A IT 1946679 A IT1946679 A IT 1946679A IT 1110037 B IT1110037 B IT 1110037B
- Authority
- IT
- Italy
- Prior art keywords
- complementary mos
- inverter structure
- mos elements
- elements
- inverter
- Prior art date
Links
- 230000000295 complement effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0883—Combination of depletion and enhancement field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/873,593 US4178605A (en) | 1978-01-30 | 1978-01-30 | Complementary MOS inverter structure |
Publications (2)
Publication Number | Publication Date |
---|---|
IT7919466A0 IT7919466A0 (it) | 1979-01-19 |
IT1110037B true IT1110037B (it) | 1985-12-23 |
Family
ID=25361949
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT19466/79A IT1110037B (it) | 1978-01-30 | 1979-01-19 | Struttura ad invertitore,ad elementi mos complementari |
Country Status (5)
Country | Link |
---|---|
US (1) | US4178605A (it) |
JP (2) | JPS54114088A (it) |
DE (1) | DE2902368A1 (it) |
GB (1) | GB2013396B (it) |
IT (1) | IT1110037B (it) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54161894A (en) * | 1978-06-13 | 1979-12-21 | Toshiba Corp | Manufacture of semiconductor device |
US4489340A (en) * | 1980-02-04 | 1984-12-18 | Nippon Telegraph & Telephone Public Corporation | PNPN Light sensitive semiconductor switch with phototransistor connected across inner base regions |
JPS5846193B2 (ja) * | 1980-07-15 | 1983-10-14 | 株式会社東芝 | 半導体装置 |
JPS58222558A (ja) * | 1982-06-18 | 1983-12-24 | Hitachi Ltd | 半導体装置 |
JPS6065547A (ja) * | 1983-09-20 | 1985-04-15 | Sharp Corp | 半導体装置 |
NL8303441A (nl) * | 1983-10-07 | 1985-05-01 | Philips Nv | Geintegreerde schakeling met komplementaire veldeffekttransistors. |
US4821085A (en) * | 1985-05-01 | 1989-04-11 | Texas Instruments Incorporated | VLSI local interconnect structure |
US4811078A (en) * | 1985-05-01 | 1989-03-07 | Texas Instruments Incorporated | Integrated circuit device and process with tin capacitors |
CN1034533C (zh) * | 1985-05-01 | 1997-04-09 | 得克萨斯仪器公司 | 超大规模集成电路静态随机存储器 |
US4804636A (en) * | 1985-05-01 | 1989-02-14 | Texas Instruments Incorporated | Process for making integrated circuits having titanium nitride triple interconnect |
US4975756A (en) * | 1985-05-01 | 1990-12-04 | Texas Instruments Incorporated | SRAM with local interconnect |
EP0251682A3 (en) * | 1986-06-25 | 1989-12-06 | Hewlett-Packard Company | Integrated bipolar-mos device |
US5028564A (en) * | 1989-04-27 | 1991-07-02 | Chang Chen Chi P | Edge doping processes for mesa structures in SOS and SOI devices |
JPH11338439A (ja) | 1998-03-27 | 1999-12-10 | Semiconductor Energy Lab Co Ltd | 半導体表示装置の駆動回路および半導体表示装置 |
US6235630B1 (en) * | 1998-08-19 | 2001-05-22 | Micron Technology, Inc. | Silicide pattern structures and methods of fabricating the same |
KR100275965B1 (ko) * | 1999-01-22 | 2000-12-15 | 김영환 | 반도체 장치의 제조방법 |
US6426534B1 (en) | 2000-05-01 | 2002-07-30 | Xilinx, Inc. | Methods and circuits employing threshold voltages for mask-alignment detection |
JP2004253541A (ja) * | 2003-02-19 | 2004-09-09 | Ricoh Co Ltd | 半導体装置 |
US8067287B2 (en) | 2008-02-25 | 2011-11-29 | Infineon Technologies Ag | Asymmetric segmented channel transistors |
SE533026C2 (sv) * | 2008-04-04 | 2010-06-08 | Klas-Haakan Eklund | Fälteffekttransistor med isolerad gate seriekopplad med en JFET |
US10608624B2 (en) * | 2017-05-25 | 2020-03-31 | Solaredge Technologies Ltd. | Efficient switching circuit |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3436622A (en) * | 1966-12-20 | 1969-04-01 | Texas Instruments Inc | Compound channel insulated gate triode |
US3641405A (en) * | 1967-10-13 | 1972-02-08 | Gen Electric | Field-effect transistors with superior passivating films and method of making same |
FR2121935A5 (it) * | 1971-01-12 | 1972-08-25 | Sescosem | |
JPS5145438B1 (it) * | 1971-06-25 | 1976-12-03 | ||
US3872491A (en) * | 1973-03-08 | 1975-03-18 | Sprague Electric Co | Asymmetrical dual-gate FET |
US3898105A (en) * | 1973-10-25 | 1975-08-05 | Mostek Corp | Method for making FET circuits |
US4052229A (en) * | 1976-06-25 | 1977-10-04 | Intel Corporation | Process for preparing a substrate for mos devices of different thresholds |
US4078947A (en) * | 1976-08-05 | 1978-03-14 | International Business Machines Corporation | Method for forming a narrow channel length MOS field effect transistor |
-
1978
- 1978-01-30 US US05/873,593 patent/US4178605A/en not_active Expired - Lifetime
-
1979
- 1979-01-19 IT IT19466/79A patent/IT1110037B/it active
- 1979-01-19 GB GB7901964A patent/GB2013396B/en not_active Expired
- 1979-01-22 DE DE19792902368 patent/DE2902368A1/de not_active Withdrawn
- 1979-01-24 JP JP767279A patent/JPS54114088A/ja active Pending
-
1984
- 1984-04-12 JP JP1984054667U patent/JPS59189345U/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
GB2013396B (en) | 1982-06-03 |
GB2013396A (en) | 1979-08-08 |
JPS59189345U (ja) | 1984-12-15 |
DE2902368A1 (de) | 1979-08-02 |
JPS54114088A (en) | 1979-09-05 |
US4178605A (en) | 1979-12-11 |
IT7919466A0 (it) | 1979-01-19 |
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