Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/762—Charge transfer devices
  • H01L29/765—Charge-coupled devices
  • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
  • H01L29/76816—Output structures
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
  • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
  • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
  • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/762—Charge transfer devices
  • H01L29/765—Charge-coupled devices
  • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
  • H01L29/76825—Structures for regeneration, refreshing, leakage compensation or the like

Applications Claiming Priority (1)

Publications (2)

Family

ID=6008536

Family Applications (1)

Country Status (8)

Families Citing this family (6)

Family Cites Families (6)

• 1977
  • 1977-05-10 DE DE2721039A patent/DE2721039C2/de not_active Expired
• 1978
  • 1978-04-19 US US05/897,939 patent/US4242600A/en not_active Expired - Lifetime
  • 1978-05-02 FR FR7812929A patent/FR2390802A1/fr active Granted
  • 1978-05-03 IT IT22955/78A patent/IT1095739B/it active
  • 1978-05-08 JP JP53054355A patent/JPS6012720B2/ja not_active Expired
  • 1978-05-09 GB GB18384/78A patent/GB1599830A/en not_active Expired
  • 1978-05-09 CA CA302,952A patent/CA1124403A/en not_active Expired
  • 1978-05-10 BE BE187575A patent/BE866926A/xx unknown

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