US4242600A - Digital CCD arrangement - Google Patents

Digital CCD arrangement Download PDF

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Publication number
US4242600A
US4242600A US05/897,939 US89793978A US4242600A US 4242600 A US4242600 A US 4242600A US 89793978 A US89793978 A US 89793978A US 4242600 A US4242600 A US 4242600A
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United States
Prior art keywords
substrate
electrode
potential
ccd
pulse train
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Expired - Lifetime
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US05/897,939
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English (en)
Inventor
Kurt Hoffmann
Manfred Mauthe
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Siemens AG
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Siemens AG
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76825—Structures for regeneration, refreshing, leakage compensation or the like

Definitions

  • This invention relates to a digital CCD (charge coupled device) arrangement of the type which includes a semiconductor layer of the first conductivity type, a row of shift electrodes arranged in insulated fashion above said semiconductor layer, which electrodes are fed with pulse train voltages displaced in phase relative to one another.
  • the arrangement further includes an output end zone of a conductivity type opposite to that of said semiconductor layer, which is connected on the one hand to a switch which intermittently supplies a first reference potential and, on the other hand, to the input of a transistor stage.
  • the digital input signal is converted into a sequence of charge carrier parcels and displaced in this form in the semiconductor layer along the row of electrodes in the direction towards the output-end zone of opposite conductivity type in stepped fashion.
  • the output-end field effect transistor stage which is illustrated in FIG. 10(b) of this publication and which initially emits a first logic signal level of a digital output signal, is caused to emit a second logic signal level when the individual charge carrier parcels penetrate into the output end zone so that a digital output signal is formed which corresponds to the input signal and normally is inverted.
  • regenerator circuits are now employed, the function of which is to re-establish the full voltage range between the logic signal states of the output signal.
  • the IEEE Journal of Solid-State Circuits, Vol. SC-11, 1976, No. 1, pages 18-24, in particular FIG. 8, relates to a CCD arrangement of the type described above, having a regenerating logic in MOS technology which contains a flip-flop.
  • This flip-flop is fed on the one hand with the potential of the output-end zone of opposite conductivity and on the other hand with a reference voltage which is formed in a further CCD arrangement comprising a following comparator circuit, in that said reference voltage lies between the potentials of the output-end zone during the evaluation of the logic states "0" and "1".
  • the output-end zone of opposite conductivity is additionally preceded by an electrode which is insulated from the semiconductor layer and which is connected to a predetermined, further reference potential which serves as potential barrier.
  • the present invention includes a CCD arrangement of the above general type in which the last shift electrode preceding the output end zone is coupled with respect to potential to a circuit point of a transistor stage, which point, in the event of a quantity of charge carriers representing logic level "1" in the output end zone experiences a change in potential which corresponds to the change in potential beneath the other shift electrodes, and that between the last preceding shift electrode and the output-end zone, there is arranged a further electrode which is insulated from the semiconductor layer and is onnected to a second reference potential which corresponds to an intermediate value which is swept over by the potential across the circuit point.
  • the advantage which can be achieved by the invention consists in particular in that a low cost output stage can be used to maintain an extremely low bit error rate of the digital output signal relative to the input signal while the output signal simultaneously possesses an optimum voltage range.
  • FIG. 1 illustrates a preferred exemplary embodiment of the invention
  • FIG. 2 shows a potential curve relating to FIG. 1
  • FIG. 3 shows the change in a potential curve relating to FIG. 1 during the read-out of an information unit
  • FIG. 4 shows voltage-time diagrams relating to FIG. 1
  • FIG. 5 shows the combination of the examplary embodiment illustrated in FIG. 1 with a further CCD arrangement.
  • FIG. 1 schematically illustrates a two-phase CCD arrangement.
  • This consists of a p-doped silicon substrate 1, the surface of which is coated with an electrically insulating layer 2, electrodes E1, 11b, 12b . . . n1b and n2b are arranged in such a manner that they lie in a lower plane closer to the surface of the substrate 1, whereas further electrodes 11a, 12a . . . n1a, n2a and R1 lie in a higher plane more distant from the substrate surface.
  • FIG. 1 shows that the last mentioned electrodes contact the surface of the layer 2.
  • further insulating layers which cover these electrodes, but which have not been illustrated for reasons of clarity.
  • the electrode combination 11a, 11b is fed via a common terminal 11 with a pulse train voltage U1, the time diagram of which is illustrated in FIG. 4.
  • the following electrode combination 12a, 12b receives a pulse train voltage U2 (FIG. 4) via a common terminal 12.
  • the first is connected via the common terminal n1 to U1, and the last is connected via the common terminal n1 to U1, and the last is connected via the terminal n2 not to U2, as would have been expected in accordance with the alternating assignment, but to a voltage U RK likewise shown in FIG. 4.
  • the aforementioned electrode combinations are also referred to as shift electrodes.
  • the electrode E1 which in the following is referred to as input electrode leads to the circuit input terminal E.
  • the electrode R1 possesses a terminal R. 3 designates an n+--doped zone which serves as source zone for the CCD arrangement, whereas 4 designates an output-end, likewise n+--doped zone.
  • the output-end zone 4 is connected via a line 5 to the source terminal of a field effect switching transistor T1, the drain terminal of which is connected to a first reference voltage U R1 .
  • the gate terminal of T1 is designated G1.
  • the source terminal of T1 is connected to the gate of a field effect transistor stage T2, the source terminal of T2 being connected via an impedance 6 to ground potential, while its drain terminal is connected to the pulse train voltage U2.
  • the connection point between the source terminal of T2 and the impedance 6 simultaneously represents the circuit output A from which the output signal is tapped.
  • A is connected to the common terminal n2 of the last shift electrode which precedes the output-end zone 4.
  • ⁇ 1 is plotted over the axis s which extends in the longitudinal direction of the substrate 1 beneath the row of electrodes. So-called potential wells PT1, PT2, etc., are formed beneath the shift electrodes which are connected to P1.
  • the potential well PT3 in FIG. 2 is formed in that a positive voltage pulse P1" of a voltage U G1 supplied to G1 switches the transistor T1 conductive so that the zone 4 is connected to a reference voltage U R1 for the duration of P1" and thus is reset to a first reference potential ⁇ R1.
  • the width of the zone 4 is referenced s4.
  • the terminal R is constantly connected to a second reference voltage which produces a second reference potential ⁇ R2 beneath R1. Following the rear flank of each pulse P1", the zone 4 is disconnected from U R1 so that it assumes the so-called floating state.
  • T2 is conductive and during the occurrence of one of the pulses P1' of U2 a voltage U RK corresponding approximately to U2 drops across the impedance 6 and across the circuit point A relative to ground.
  • U RK exhibits a high voltage level which corresponds to a low logic signal level transmitted in the substrate 1 and to a logic "0", whereas in the event of a feedback process there occurs a low voltage level of U RK which corresponds to a high logic signal level transmitted in 1 and to a logic "1".
  • the second reference potential ⁇ R2 corresponds to an intermediate value of the potential changes occurring across A and beneath n2a, n2b.
  • the value of ⁇ R2 is selected to be such that the potential threshold beneath R1 can be exceeded only by those charge carrier parcels which characterize a logic "1".
  • Simulated "1" signals which are formed, for example, by the dark current influence during the shift in 1, do not fill the potential well beneath n2a, n2b to the level of the potential threshold, do not produce any potential shifts in the region of s4, and consequently also not beneath n2a and n2b. Therefore, faults influences of this type are not taken into account and cannot reduce the voltage range at the output A.
  • the last shift electrode arranged in front of the oppositely doped output zone is released of the pulse train voltage which it is normally assigned, and is fed with a voltage which is obtained via a circuit point of the output-end transistor circuit and which, when a charge carrier parcel is shifted into the output-end zone of opposite conductivity, experiences a change in amplitude which corresponds to the potential changes occurring under the influence of the pulse train voltages beneath the shift electrodes.
  • FIG. 5 a CCD arrangement corresponding to FIG. 1 and provided with like references is connected via its circuit output A to a second CCD arrangement which is of similar construction and whose p-doped substrate is referenced 1'.
  • An n+--doped zone 3' serves as charge carrier injector.
  • An input electrode E1' is connected to A.
  • a combination of reference electrodes RE arranged between 3' and E1', serves to form a potential well PT4 and a potential threshold PS1.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Networks Using Active Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
US05/897,939 1977-05-10 1978-04-19 Digital CCD arrangement Expired - Lifetime US4242600A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2721039 1977-05-10
DE2721039A DE2721039C2 (de) 1977-05-10 1977-05-10 Digitale Ladungsverschiebeanordnung

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US4242600A true US4242600A (en) 1980-12-30

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US (1) US4242600A (it)
JP (1) JPS6012720B2 (it)
BE (1) BE866926A (it)
CA (1) CA1124403A (it)
DE (1) DE2721039C2 (it)
FR (1) FR2390802A1 (it)
GB (1) GB1599830A (it)
IT (1) IT1095739B (it)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4513431A (en) * 1982-06-07 1985-04-23 International Business Machines Corporation Charge coupled device output circuit structure
US4546368A (en) * 1981-09-17 1985-10-08 Nippon Electric Co., Ltd. Charge transfer device having a precisely controlled injection rate
US4627083A (en) * 1985-03-25 1986-12-02 U.S. Philips Corporation Charge transfer device output
EP0406890A2 (en) * 1989-07-07 1991-01-09 Kabushiki Kaisha Toshiba Charge transfer device and its driving method
WO1997045952A1 (en) * 1994-05-27 1997-12-04 Arithmos, Inc. Channel coupled feedback circuits

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6229802U (it) * 1985-07-31 1987-02-23

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3937985A (en) * 1974-06-05 1976-02-10 Bell Telephone Laboratories, Incorporated Apparatus and method for regenerating charge
US3986059A (en) * 1975-04-18 1976-10-12 Bell Telephone Laboratories, Incorporated Electrically pulsed charge regenerator for semiconductor charge coupled devices
US4048519A (en) * 1975-09-18 1977-09-13 Siemens Aktiengesellschaft Regenerator circuit for CCD elements
US4092549A (en) * 1976-12-20 1978-05-30 Hughes Aircraft Company Charge comparator
US4093872A (en) * 1974-01-25 1978-06-06 Hughes Aircraft Company Charge coupled device with input for direct injection of signal

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4047051A (en) * 1975-10-24 1977-09-06 International Business Machines Corporation Method and apparatus for replicating a charge packet

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4093872A (en) * 1974-01-25 1978-06-06 Hughes Aircraft Company Charge coupled device with input for direct injection of signal
US3937985A (en) * 1974-06-05 1976-02-10 Bell Telephone Laboratories, Incorporated Apparatus and method for regenerating charge
US3986059A (en) * 1975-04-18 1976-10-12 Bell Telephone Laboratories, Incorporated Electrically pulsed charge regenerator for semiconductor charge coupled devices
US4048519A (en) * 1975-09-18 1977-09-13 Siemens Aktiengesellschaft Regenerator circuit for CCD elements
US4092549A (en) * 1976-12-20 1978-05-30 Hughes Aircraft Company Charge comparator

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Kosonocky, "Charge-coupled devices-An Overview" Wescon Technical Papers, vol. 18 (9/74), No. 211, pp. 1-20. *
Stinson, "Regenerative Photocell Using Charge-Coupled Device Structure" IBM Technical Disclosure Bulletin, vol. 16 (7/73) pp. 632-633. *
Tompsett, "A Simple Charge Regenerator for use with Charge Transfer Devices . . ." IEEE J. Solid-State Circuits, vol. SC-7(6/72) pp. 237-242. *
Varshney, "A Byte Organized NMOS/CCD Memory With Dynamic Refresh Logic" IEEE J. Solid-State Circuits, vol. SC-11(2/76) pp. 18-24. *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4546368A (en) * 1981-09-17 1985-10-08 Nippon Electric Co., Ltd. Charge transfer device having a precisely controlled injection rate
US4513431A (en) * 1982-06-07 1985-04-23 International Business Machines Corporation Charge coupled device output circuit structure
US4627083A (en) * 1985-03-25 1986-12-02 U.S. Philips Corporation Charge transfer device output
AU575717B2 (en) * 1985-03-25 1988-08-04 N.V. Philips Gloeilampenfabrieken Charge transfer device
EP0406890A2 (en) * 1989-07-07 1991-01-09 Kabushiki Kaisha Toshiba Charge transfer device and its driving method
EP0406890A3 (en) * 1989-07-07 1991-07-17 Kabushiki Kaisha Toshiba Charge transfer device and its driving method
US5093849A (en) * 1989-07-07 1992-03-03 Kabushiki Kaisha Toshiba Charge transfer device and its driving method for providing potential wells gradually shallower toward the final transfer stage
WO1997045952A1 (en) * 1994-05-27 1997-12-04 Arithmos, Inc. Channel coupled feedback circuits
US5748035A (en) * 1994-05-27 1998-05-05 Arithmos, Inc. Channel coupled feedback circuits

Also Published As

Publication number Publication date
DE2721039C2 (de) 1986-10-23
GB1599830A (en) 1981-10-07
JPS6012720B2 (ja) 1985-04-03
DE2721039A1 (de) 1978-11-16
FR2390802B1 (it) 1983-08-19
IT7822955A0 (it) 1978-05-03
JPS53139940A (en) 1978-12-06
CA1124403A (en) 1982-05-25
IT1095739B (it) 1985-08-17
BE866926A (fr) 1978-09-01
FR2390802A1 (fr) 1978-12-08

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