IT1078687B - Procedimento per depositare silicio elementare dalla fase gassosa - Google Patents

Procedimento per depositare silicio elementare dalla fase gassosa

Info

Publication number
IT1078687B
IT1078687B IT20908/77A IT2090877A IT1078687B IT 1078687 B IT1078687 B IT 1078687B IT 20908/77 A IT20908/77 A IT 20908/77A IT 2090877 A IT2090877 A IT 2090877A IT 1078687 B IT1078687 B IT 1078687B
Authority
IT
Italy
Prior art keywords
procedure
gaseous phase
elementary silicon
storing elementary
storing
Prior art date
Application number
IT20908/77A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1078687B publication Critical patent/IT1078687B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
IT20908/77A 1976-03-08 1977-03-04 Procedimento per depositare silicio elementare dalla fase gassosa IT1078687B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762609564 DE2609564A1 (de) 1976-03-08 1976-03-08 Verfahren zum abscheiden von elementarem silicium aus der gasphase

Publications (1)

Publication Number Publication Date
IT1078687B true IT1078687B (it) 1985-05-08

Family

ID=5971816

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20908/77A IT1078687B (it) 1976-03-08 1977-03-04 Procedimento per depositare silicio elementare dalla fase gassosa

Country Status (5)

Country Link
US (1) US4125643A (it)
JP (1) JPS52109440A (it)
CA (1) CA1091992A (it)
DE (1) DE2609564A1 (it)
IT (1) IT1078687B (it)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56105627A (en) * 1980-01-28 1981-08-22 Fuji Photo Film Co Ltd Manufacture of amorphous semiconductor
JPS58128728A (ja) * 1982-01-28 1983-08-01 Toshiba Mach Co Ltd 半導体気相成長装置
US4491604A (en) * 1982-12-27 1985-01-01 Lesk Israel A Silicon deposition process
US4559219A (en) * 1984-04-02 1985-12-17 General Electric Company Reducing powder formation in the production of high-purity silicon
LU88057A1 (de) * 1992-01-24 1993-08-17 Paul Wurth S.A. Blaslanzenaufhaengung mit kombinierter medienversorgung
US5382419A (en) * 1992-09-28 1995-01-17 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5478396A (en) * 1992-09-28 1995-12-26 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
EP2021279A2 (en) * 2006-04-13 2009-02-11 Cabot Corporation Production of silicon through a closed-loop process
US9683286B2 (en) * 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor
JP5428303B2 (ja) * 2007-11-28 2014-02-26 三菱マテリアル株式会社 多結晶シリコン製造方法
JP5130882B2 (ja) * 2007-11-28 2013-01-30 三菱マテリアル株式会社 多結晶シリコンの製造方法及び製造装置
US8961689B2 (en) * 2008-03-26 2015-02-24 Gtat Corporation Systems and methods for distributing gas in a chemical vapor deposition reactor
DE102008026811B4 (de) 2008-06-05 2012-04-12 Centrotherm Sitec Gmbh Verfahren und Anordnung zum Aufschmelzen von Silizium
CN102165604A (zh) * 2008-09-29 2011-08-24 薄膜硅公司 单片集成太阳能电池组件
US8444766B2 (en) * 2008-12-10 2013-05-21 Thinsilicon Corporation System and method for recycling a gas used to deposit a semiconductor layer
DE102009010086B4 (de) * 2009-01-29 2013-04-11 Centrotherm Sitec Gmbh Anordnung und Verfahren zur Messung der Temperatur und des Dickenwachstums von Siliziumstäben in einem Silizium-Abscheidereaktor
DE102009035952A1 (de) * 2009-08-03 2011-02-10 Graeber Engineering Consultants Gmbh Flansch für ein CVD-Reaktorgehäuse, Verwendung einer Kamera bei einem CVD-Verfahren sowie CVD-Verfahren zur Erzeugung von Siliziumstangen
DE102009043946A1 (de) * 2009-09-04 2011-03-17 G+R Technology Group Ag Anlage und Verfahren zur Steuerung der Anlage für die Herstellung von polykristallinem Silizium
DE102010040093A1 (de) * 2010-09-01 2012-03-01 Wacker Chemie Ag Verfahren zur Herstellung von polykristallinem Silicium
DE102012206439A1 (de) * 2012-04-19 2013-10-24 Wacker Chemie Ag Polykristallines Siliciumgranulat und seine Herstellung
JP5873392B2 (ja) * 2012-06-06 2016-03-01 株式会社トクヤマ 多結晶シリコンロッドの製造方法と製造装置
US9297765B2 (en) 2013-03-14 2016-03-29 Sunedison, Inc. Gas decomposition reactor feedback control using Raman spectrometry
US20140271437A1 (en) * 2013-03-14 2014-09-18 Memc Electronic Materials, Inc. Method of controlling a gas decomposition reactor by raman spectrometry
TW201718922A (zh) * 2015-08-24 2017-06-01 漢洛克半導體公司 用以改良多晶矽生長之二氯矽烷補償控制策略

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1123300B (de) * 1960-06-03 1962-02-08 Siemens Ag Verfahren zur Herstellung von Silicium oder Germanium
DE1139813B (de) * 1960-08-25 1962-11-22 Siemens Ag Verfahren zum Herstellen von hochreinen Silicium- oder Germaniumstaeben
DE1954847C2 (de) * 1969-10-31 1975-04-24 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren und Anordnung zum Messen der Länge oder Breite eines Objektes oder eines davon abgeleiteten Wertes durch Darstellung eines Objektbildes auf dem Bildschirm eines Fernsehgerätes
US3853974A (en) * 1970-04-06 1974-12-10 Siemens Ag Method of producing a hollow body of semiconductor material
DE2116746C3 (de) * 1971-04-06 1978-12-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von Halbleiterstäben durch thermische Zersetzung einer Halbleiterverbindung

Also Published As

Publication number Publication date
DE2609564A1 (de) 1977-09-15
JPS638185B2 (it) 1988-02-22
CA1091992A (en) 1980-12-23
JPS52109440A (en) 1977-09-13
US4125643A (en) 1978-11-14
DE2609564C2 (it) 1988-06-16

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