IT1067293B - Procedimento per il trattamento termico di dischi di materiale semiconduttore - Google Patents

Procedimento per il trattamento termico di dischi di materiale semiconduttore

Info

Publication number
IT1067293B
IT1067293B IT30618/76A IT3061876A IT1067293B IT 1067293 B IT1067293 B IT 1067293B IT 30618/76 A IT30618/76 A IT 30618/76A IT 3061876 A IT3061876 A IT 3061876A IT 1067293 B IT1067293 B IT 1067293B
Authority
IT
Italy
Prior art keywords
discs
procedure
heat treatment
semiconductive material
semiconductive
Prior art date
Application number
IT30618/76A
Other languages
English (en)
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19752558041 external-priority patent/DE2558041C3/de
Priority claimed from DE19762619444 external-priority patent/DE2619444C2/de
Priority claimed from DE19762629951 external-priority patent/DE2629951C2/de
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1067293B publication Critical patent/IT1067293B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G33/00—Screw or rotary spiral conveyors
    • B65G33/02—Screw or rotary spiral conveyors for articles
    • B65G33/06—Screw or rotary spiral conveyors for articles conveyed and guided by parallel screws
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C30B31/106—Continuous processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT30618/76A 1975-12-22 1976-12-20 Procedimento per il trattamento termico di dischi di materiale semiconduttore IT1067293B (it)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19752558041 DE2558041C3 (de) 1975-12-22 1975-12-22 Verfahren zum Transport von Halbleiterscheiben durch ein Temperaturbehandlungsrohr
DE19762619444 DE2619444C2 (de) 1975-12-22 1976-05-03 Vorrichtung zur Durchführung eines Verfahrens zum Transport von Halbleiterscheiben
DE19762629951 DE2629951C2 (de) 1975-12-22 1976-07-02 Verfahren zum Transport von Halbleiterscheiben durch ein Temperaturbehandlungsrohr

Publications (1)

Publication Number Publication Date
IT1067293B true IT1067293B (it) 1985-03-16

Family

ID=27186673

Family Applications (1)

Application Number Title Priority Date Filing Date
IT30618/76A IT1067293B (it) 1975-12-22 1976-12-20 Procedimento per il trattamento termico di dischi di materiale semiconduttore

Country Status (4)

Country Link
JP (1) JPS5277674A (fr)
FR (1) FR2336796A1 (fr)
GB (1) GB1502754A (fr)
IT (1) IT1067293B (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148433A (en) * 1979-05-08 1980-11-19 Nec Corp Manufacture of semiconductor device and device therefor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1342183A (en) * 1919-12-29 1920-06-01 Ransom George Hardiman Wind-screen for use on conveyances and like purposes
GB1282322A (en) * 1968-08-29 1972-07-19 Texas Instruments Inc Continuous deposition system
DE1801187B1 (de) * 1968-10-04 1970-04-16 Siemens Ag Vorrichtung zur Waermebehandlung von Siliziumscheiben
US3602192A (en) * 1969-05-19 1971-08-31 Ibm Semiconductor wafer processing
US3638927A (en) * 1969-08-01 1972-02-01 Texas Instruments Inc Slice conveyor furnace
NL7206014A (fr) * 1971-07-07 1973-01-09
US3772756A (en) * 1972-02-23 1973-11-20 Concep Machine Co Inc Core handling system
DE2235342A1 (de) * 1972-07-19 1974-01-31 Siemens Ag Diffusionsrohr zur dotierung von halbleiterscheiben
DE2357319B2 (de) * 1973-11-16 1976-05-26 Denki Kagaku Kogyo K.K., Tokio Scheibenfoermige phosphor-dotierstoffquelle und verfahren zu deren herstellung
DE2411142A1 (de) * 1974-03-08 1975-10-09 Bosch Gmbh Robert Vorrichtung zum keimfreimachen von behaeltern

Also Published As

Publication number Publication date
GB1502754A (en) 1978-03-01
JPS5277674A (en) 1977-06-30
FR2336796A1 (fr) 1977-07-22
FR2336796B1 (fr) 1983-01-21

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