IT1064230B - Dispositivo semiconduttore e metodo di fabbricazione dello stesso - Google Patents

Dispositivo semiconduttore e metodo di fabbricazione dello stesso

Info

Publication number
IT1064230B
IT1064230B IT22641/76A IT2264176A IT1064230B IT 1064230 B IT1064230 B IT 1064230B IT 22641/76 A IT22641/76 A IT 22641/76A IT 2264176 A IT2264176 A IT 2264176A IT 1064230 B IT1064230 B IT 1064230B
Authority
IT
Italy
Prior art keywords
manufacturing
same
semiconductive device
semiconductive
Prior art date
Application number
IT22641/76A
Other languages
English (en)
Italian (it)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT1064230B publication Critical patent/IT1064230B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/732Vertical transistors
    • H01L29/7325Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
IT22641/76A 1975-04-28 1976-04-23 Dispositivo semiconduttore e metodo di fabbricazione dello stesso IT1064230B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7504990,A NL185484C (nl) 1975-04-28 1975-04-28 Halfgeleiderinrichting met een halfgeleiderlichaam bevattende tenminste een transistor.

Publications (1)

Publication Number Publication Date
IT1064230B true IT1064230B (it) 1985-02-18

Family

ID=19823659

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22641/76A IT1064230B (it) 1975-04-28 1976-04-23 Dispositivo semiconduttore e metodo di fabbricazione dello stesso

Country Status (11)

Country Link
JP (1) JPS51139782A (pt)
AU (1) AU497831B2 (pt)
BE (1) BE841135A (pt)
CA (1) CA1057412A (pt)
CH (1) CH600572A5 (pt)
DE (1) DE2616925C2 (pt)
FR (1) FR2309980A1 (pt)
GB (1) GB1541067A (pt)
IT (1) IT1064230B (pt)
NL (1) NL185484C (pt)
SE (1) SE414095B (pt)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3030564A1 (de) * 1980-08-13 1982-03-11 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiterbauelement fuer hohe sperrspannungen
JPS63253664A (ja) * 1987-04-10 1988-10-20 Sony Corp バイポ−ラトランジスタ
DE4119904A1 (de) * 1991-06-17 1992-12-24 Telefunken Electronic Gmbh Halbleiteranordnung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1439417B2 (de) * 1964-07-21 1976-09-23 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen einer halbleiteranordnung
US3442723A (en) * 1964-12-30 1969-05-06 Sony Corp Method of making a semiconductor junction by diffusion
US3772577A (en) * 1972-02-10 1973-11-13 Texas Instruments Inc Guard ring mesa construction for low and high voltage npn and pnp transistors and diodes and method of making same
JPS5026477A (pt) * 1973-07-09 1975-03-19

Also Published As

Publication number Publication date
GB1541067A (en) 1979-02-21
AU1333676A (en) 1977-11-03
JPS51139782A (en) 1976-12-02
NL185484B (nl) 1989-11-16
NL7504990A (nl) 1976-11-01
AU497831B2 (en) 1979-01-11
CH600572A5 (pt) 1978-06-15
DE2616925C2 (de) 1983-04-14
CA1057412A (en) 1979-06-26
JPS5724933B2 (pt) 1982-05-26
BE841135A (fr) 1976-10-26
FR2309980A1 (fr) 1976-11-26
FR2309980B1 (pt) 1981-09-18
DE2616925A1 (de) 1976-11-11
SE7601693L (sv) 1976-10-29
NL185484C (nl) 1990-04-17
SE414095B (sv) 1980-07-07

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19940429