IT1039921B - Procedimento per fabbricare undispositivo a semiconduttori - Google Patents
Procedimento per fabbricare undispositivo a semiconduttoriInfo
- Publication number
- IT1039921B IT1039921B IT25538/75A IT2553875A IT1039921B IT 1039921 B IT1039921 B IT 1039921B IT 25538/75 A IT25538/75 A IT 25538/75A IT 2553875 A IT2553875 A IT 2553875A IT 1039921 B IT1039921 B IT 1039921B
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/40—Vertical BJTs
- H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19742435905 DE2435905C3 (de) | 1974-07-25 | Verfahren zum Herstellen einer Halbleiteranordnung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1039921B true IT1039921B (it) | 1979-12-10 |
Family
ID=5921549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT25538/75A IT1039921B (it) | 1974-07-25 | 1975-07-18 | Procedimento per fabbricare undispositivo a semiconduttori |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3963524A (en:Method) |
| JP (1) | JPS5140773A (en:Method) |
| CA (1) | CA1070028A (en:Method) |
| FR (1) | FR2280201A1 (en:Method) |
| GB (1) | GB1492447A (en:Method) |
| IT (1) | IT1039921B (en:Method) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4143455A (en) * | 1976-03-11 | 1979-03-13 | Siemens Aktiengesellschaft | Method of producing a semiconductor component |
| JPS5367383A (en) * | 1976-08-08 | 1978-06-15 | Fairchild Camera Instr Co | Method of producing small ic implantation logic semiconductor |
| JPS6035818B2 (ja) * | 1976-09-22 | 1985-08-16 | 日本電気株式会社 | 半導体装置の製造方法 |
| US4135954A (en) * | 1977-07-12 | 1979-01-23 | International Business Machines Corporation | Method for fabricating self-aligned semiconductor devices utilizing selectively etchable masking layers |
| US4233934A (en) * | 1978-12-07 | 1980-11-18 | General Electric Company | Guard ring for TGZM processing |
| JPS6028135B2 (ja) * | 1979-05-18 | 1985-07-03 | 富士通株式会社 | 半導体装置の製造方法 |
| JPS58127374A (ja) * | 1982-01-25 | 1983-07-29 | Hitachi Ltd | 半導体装置の製造方法 |
| JPS58108737A (ja) * | 1982-11-15 | 1983-06-28 | Nec Corp | 半導体装置の製造方法 |
| IT1231913B (it) * | 1987-10-23 | 1992-01-15 | Sgs Microelettronica Spa | Procedimento di fabbricazione di transistori ad alta frequenza. |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3979768A (en) * | 1966-03-23 | 1976-09-07 | Hitachi, Ltd. | Semiconductor element having surface coating comprising silicon nitride and silicon oxide films |
| BE759667A (fr) * | 1969-12-01 | 1971-06-01 | Philips Nv | Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur obtenu par la mise en oeuvre de ce procede |
| GB1332931A (en) * | 1970-01-15 | 1973-10-10 | Mullard Ltd | Methods of manufacturing a semiconductor device |
| US3756861A (en) * | 1972-03-13 | 1973-09-04 | Bell Telephone Labor Inc | Bipolar transistors and method of manufacture |
| US3793088A (en) * | 1972-11-15 | 1974-02-19 | Bell Telephone Labor Inc | Compatible pnp and npn devices in an integrated circuit |
| US3898105A (en) * | 1973-10-25 | 1975-08-05 | Mostek Corp | Method for making FET circuits |
-
1975
- 1975-05-20 GB GB21385/75A patent/GB1492447A/en not_active Expired
- 1975-06-18 CA CA229,648A patent/CA1070028A/en not_active Expired
- 1975-07-09 US US05/594,341 patent/US3963524A/en not_active Expired - Lifetime
- 1975-07-18 IT IT25538/75A patent/IT1039921B/it active
- 1975-07-23 FR FR7522979A patent/FR2280201A1/fr active Granted
- 1975-07-25 JP JP50091009A patent/JPS5140773A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2280201A1 (fr) | 1976-02-20 |
| JPS5140773A (en) | 1976-04-05 |
| US3963524A (en) | 1976-06-15 |
| FR2280201B1 (en:Method) | 1983-03-18 |
| GB1492447A (en) | 1977-11-16 |
| DE2435905A1 (de) | 1976-02-05 |
| DE2435905B2 (de) | 1976-08-26 |
| CA1070028A (en) | 1980-01-15 |
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