IT1039341B - Dispositivo ad effetto di campo a metallo isolante semiconduttore - Google Patents
Dispositivo ad effetto di campo a metallo isolante semiconduttoreInfo
- Publication number
- IT1039341B IT1039341B IT24685/75A IT2468575A IT1039341B IT 1039341 B IT1039341 B IT 1039341B IT 24685/75 A IT24685/75 A IT 24685/75A IT 2468575 A IT2468575 A IT 2468575A IT 1039341 B IT1039341 B IT 1039341B
- Authority
- IT
- Italy
- Prior art keywords
- field
- effect device
- semiconducting metal
- metal insulation
- insulation
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000009413 insulation Methods 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/905—Plural dram cells share common contact or common trench
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7207874A JPS5534582B2 (it) | 1974-06-24 | 1974-06-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1039341B true IT1039341B (it) | 1979-12-10 |
Family
ID=13479001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT24685/75A IT1039341B (it) | 1974-06-24 | 1975-06-23 | Dispositivo ad effetto di campo a metallo isolante semiconduttore |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US4012762A (it) |
| JP (1) | JPS5534582B2 (it) |
| AT (1) | AT370560B (it) |
| CA (1) | CA1044377A (it) |
| CH (1) | CH586465A5 (it) |
| DE (1) | DE2527621C3 (it) |
| FR (1) | FR2276696A1 (it) |
| GB (1) | GB1511531A (it) |
| IT (1) | IT1039341B (it) |
| NL (1) | NL7507540A (it) |
| SE (1) | SE406136B (it) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
| US4140547A (en) * | 1976-09-09 | 1979-02-20 | Tokyo Shibaura Electric Co., Ltd. | Method for manufacturing MOSFET devices by ion-implantation |
| US4173791A (en) * | 1977-09-16 | 1979-11-06 | Fairchild Camera And Instrument Corporation | Insulated gate field-effect transistor read-only memory array |
| IT1110843B (it) * | 1978-02-27 | 1986-01-06 | Rca Corp | Contatto affondato per dispositivi mos di tipo complementare |
| US4333099A (en) * | 1978-02-27 | 1982-06-01 | Rca Corporation | Use of silicide to bridge unwanted polycrystalline silicon P-N junction |
| JPS54149469A (en) * | 1978-05-16 | 1979-11-22 | Toshiba Corp | Semiconductor device |
| US4364078A (en) * | 1978-08-15 | 1982-12-14 | Synertek | Edge barrier of polysilicon and metal for integrated circuit chips |
| US4262299A (en) * | 1979-01-29 | 1981-04-14 | Rca Corporation | Semiconductor-on-insulator device and method for its manufacture |
| JPS5836506B2 (ja) * | 1980-11-20 | 1983-08-09 | 富士通株式会社 | 半導体記憶装置 |
| JPS60167278U (ja) * | 1984-04-13 | 1985-11-06 | 原電子測器株式会社 | 電磁装置 |
| JPS60231356A (ja) * | 1984-04-28 | 1985-11-16 | Mitsubishi Electric Corp | 相補形金属酸化膜半導体集積回路装置 |
| JPS61222137A (ja) * | 1985-03-06 | 1986-10-02 | Sharp Corp | チップ識別用凹凸パターン形成方法 |
| US4996576A (en) * | 1986-11-24 | 1991-02-26 | At&T Bell Laboratories | Radiation-sensitive device |
| SE461490B (sv) * | 1987-08-24 | 1990-02-19 | Asea Ab | Mos-transistor utbildad paa ett isolerande underlag |
| DE58906972D1 (de) * | 1988-08-16 | 1994-03-24 | Siemens Ag | Bipolartransistor als Schutzelement für integrierte Schaltungen. |
| JP2701502B2 (ja) * | 1990-01-25 | 1998-01-21 | 日産自動車株式会社 | 半導体装置 |
| US6239662B1 (en) * | 1998-02-25 | 2001-05-29 | Citizen Watch Co., Ltd. | Mis variable capacitor and temperature-compensated oscillator using the same |
| US6329703B1 (en) * | 1998-02-25 | 2001-12-11 | Infineon Technologies Ag | Contact between a monocrystalline silicon region and a polycrystalline silicon structure and method for producing such a contact |
| US11171039B2 (en) * | 2018-03-29 | 2021-11-09 | Taiwan Semiconductor Manufacturing Company Ltd. | Composite semiconductor substrate, semiconductor device and method for manufacturing the same |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE300472B (it) * | 1965-03-31 | 1968-04-29 | Asea Ab | |
| US3710204A (en) * | 1967-05-20 | 1973-01-09 | Telefunken Patent | A semiconductor device having a screen electrode of intrinsic semiconductor material |
| JPS497870B1 (it) * | 1969-06-06 | 1974-02-22 | ||
| US3576478A (en) * | 1969-07-22 | 1971-04-27 | Philco Ford Corp | Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode |
| US3602782A (en) * | 1969-12-05 | 1971-08-31 | Thomas Klein | Conductor-insulator-semiconductor fieldeffect transistor with semiconductor layer embedded in dielectric underneath interconnection layer |
| US3787251A (en) * | 1972-04-24 | 1974-01-22 | Signetics Corp | Mos semiconductor structure with increased field threshold and method for making the same |
| US3841926A (en) * | 1973-01-02 | 1974-10-15 | Ibm | Integrated circuit fabrication process |
| JPS5314420B2 (it) * | 1973-05-14 | 1978-05-17 | ||
| JPS523277B2 (it) * | 1973-05-19 | 1977-01-27 |
-
1974
- 1974-06-24 JP JP7207874A patent/JPS5534582B2/ja not_active Expired
-
1975
- 1975-06-16 US US05/587,153 patent/US4012762A/en not_active Expired - Lifetime
- 1975-06-17 CA CA229,547A patent/CA1044377A/en not_active Expired
- 1975-06-20 DE DE2527621A patent/DE2527621C3/de not_active Expired
- 1975-06-21 CH CH805775A patent/CH586465A5/xx not_active IP Right Cessation
- 1975-06-23 IT IT24685/75A patent/IT1039341B/it active
- 1975-06-23 SE SE7507147A patent/SE406136B/xx not_active IP Right Cessation
- 1975-06-24 GB GB26754/75A patent/GB1511531A/en not_active Expired
- 1975-06-24 NL NL7507540A patent/NL7507540A/xx active Search and Examination
- 1975-06-24 AT AT0485675A patent/AT370560B/de not_active IP Right Cessation
- 1975-06-24 FR FR7519752A patent/FR2276696A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| AU8232375A (en) | 1976-12-23 |
| JPS5534582B2 (it) | 1980-09-08 |
| DE2527621A1 (de) | 1976-01-22 |
| DE2527621C3 (de) | 1984-09-13 |
| DE2527621B2 (de) | 1981-04-30 |
| JPS512380A (it) | 1976-01-09 |
| AT370560B (de) | 1983-04-11 |
| SE406136B (sv) | 1979-01-22 |
| CA1044377A (en) | 1978-12-12 |
| ATA485675A (de) | 1982-08-15 |
| GB1511531A (en) | 1978-05-24 |
| FR2276696B1 (it) | 1979-01-19 |
| US4012762A (en) | 1977-03-15 |
| CH586465A5 (it) | 1977-03-31 |
| FR2276696A1 (fr) | 1976-01-23 |
| NL7507540A (nl) | 1975-12-30 |
| SE7507147L (sv) | 1975-12-29 |
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