IN2015DN01983A - - Google Patents

Info

Publication number
IN2015DN01983A
IN2015DN01983A IN1983DEN2015A IN2015DN01983A IN 2015DN01983 A IN2015DN01983 A IN 2015DN01983A IN 1983DEN2015 A IN1983DEN2015 A IN 1983DEN2015A IN 2015DN01983 A IN2015DN01983 A IN 2015DN01983A
Authority
IN
India
Prior art keywords
layer
metal oxide
designed
devices
fabrication
Prior art date
Application number
Other languages
English (en)
Inventor
Tadao Hashimoto
Original Assignee
Sixpoint Materials Inc
Seoul Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sixpoint Materials Inc, Seoul Semiconductor Co Ltd filed Critical Sixpoint Materials Inc
Publication of IN2015DN01983A publication Critical patent/IN2015DN01983A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
  • Led Devices (AREA)
IN1983DEN2015 2012-08-23 2013-02-28 IN2015DN01983A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261692411P 2012-08-23 2012-08-23
PCT/US2013/028427 WO2014031153A1 (en) 2012-08-23 2013-02-28 Composite substrate of gallium nitride and metal oxide

Publications (1)

Publication Number Publication Date
IN2015DN01983A true IN2015DN01983A (ko) 2015-08-14

Family

ID=47913565

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1983DEN2015 IN2015DN01983A (ko) 2012-08-23 2013-02-28

Country Status (8)

Country Link
US (2) US9224817B2 (ko)
EP (1) EP2888757A1 (ko)
JP (2) JP6541229B2 (ko)
KR (1) KR102008494B1 (ko)
CN (1) CN104781910B (ko)
IN (1) IN2015DN01983A (ko)
TW (1) TWI619822B (ko)
WO (1) WO2014031153A1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9466481B2 (en) 2006-04-07 2016-10-11 Sixpoint Materials, Inc. Electronic device and epitaxial multilayer wafer of group III nitride semiconductor having specified dislocation density, oxygen/electron concentration, and active layer thickness
EP2888757A1 (en) 2012-08-23 2015-07-01 Sixpoint Materials Inc. Composite substrate of gallium nitride and metal oxide
FR3048547B1 (fr) * 2016-03-04 2018-11-09 Saint-Gobain Lumilog Procede de fabrication d'un substrat semi-conducteur
CN106229389B (zh) * 2016-08-04 2018-06-19 东莞市中镓半导体科技有限公司 一种在金属氮化镓复合衬底上制备发光二极管的方法
US10134884B2 (en) 2016-12-23 2018-11-20 Sixpoint Materials, Inc. Electronic device using group III nitride semiconductor and its fabrication method
CN108281525A (zh) * 2017-12-07 2018-07-13 上海芯元基半导体科技有限公司 一种复合衬底、半导体器件结构及其制备方法
CN114525585A (zh) * 2022-01-05 2022-05-24 西安电子科技大学 采用预铺Ga层在金刚石上外延β-Ga2O3薄膜的制备方法及结构

Family Cites Families (27)

* Cited by examiner, † Cited by third party
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US6610144B2 (en) * 2000-07-21 2003-08-26 The Regents Of The University Of California Method to reduce the dislocation density in group III-nitride films
US6562644B2 (en) * 2000-08-08 2003-05-13 Matsushita Electric Industrial Co., Ltd. Semiconductor substrate, method of manufacturing the semiconductor substrate, semiconductor device and pattern forming method
JP3988018B2 (ja) * 2001-01-18 2007-10-10 ソニー株式会社 結晶膜、結晶基板および半導体装置
KR100850293B1 (ko) 2001-06-06 2008-08-04 니치아 카가쿠 고교 가부시키가이샤 벌크 단결정 갈륨함유 질화물을 얻기 위한 방법 및 장치
DE60234856D1 (de) 2001-10-26 2010-02-04 Ammono Sp Zoo Substrat für epitaxie
US7098487B2 (en) 2002-12-27 2006-08-29 General Electric Company Gallium nitride crystal and method of making same
FR2860248B1 (fr) * 2003-09-26 2006-02-17 Centre Nat Rech Scient Procede de realisation de substrats autosupportes de nitrures d'elements iii par hetero-epitaxie sur une couche sacrificielle
JP3801597B2 (ja) * 2004-02-09 2006-07-26 ユーディナデバイス株式会社 半導体素子の製造方法
WO2005106977A1 (ja) * 2004-04-27 2005-11-10 Matsushita Electric Industrial Co., Ltd. 窒化物半導体素子およびその製造方法
JP2006165069A (ja) * 2004-12-02 2006-06-22 Ulvac Japan Ltd 化合物半導体の成長方法及び装置
JP2006229195A (ja) * 2005-01-24 2006-08-31 Renesas Technology Corp 半導体不揮発性記憶装置及びその製造方法
US8709371B2 (en) 2005-07-08 2014-04-29 The Regents Of The University Of California Method for growing group III-nitride crystals in supercritical ammonia using an autoclave
CN1988109B (zh) * 2005-12-21 2012-03-21 弗赖贝格化合物原料有限公司 生产自支撑iii-n层和自支撑iii-n基底的方法
US20070234946A1 (en) 2006-04-07 2007-10-11 Tadao Hashimoto Method for growing large surface area gallium nitride crystals in supercritical ammonia and lagre surface area gallium nitride crystals
US7560364B2 (en) 2006-05-05 2009-07-14 Applied Materials, Inc. Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films
WO2009116808A2 (ko) * 2008-03-20 2009-09-24 서울반도체(주) 편광 광원, 그것을 채택한 백라이트 유닛 및 액정 디스플레이 모듈
WO2009151642A1 (en) * 2008-06-12 2009-12-17 Sixpoint Materials, Inc. Method for testing group-iii nitride wafers and group iii-nitride wafers with test data
JP2010042976A (ja) * 2008-07-16 2010-02-25 Sumitomo Electric Ind Ltd ＧａＮ結晶の成長方法
US7976630B2 (en) * 2008-09-11 2011-07-12 Soraa, Inc. Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture
KR20110112278A (ko) * 2009-01-08 2011-10-12 미쓰비시 가가꾸 가부시키가이샤 질화물 결정의 제조 방법, 질화물 결정 및 그 제조 장치
WO2010112540A1 (en) 2009-03-31 2010-10-07 S.O.I.Tec Silicon On Insulator Technologies Epitaxial methods and structures for reducing surface dislocation density in semiconductor materials
JP2011006304A (ja) * 2009-06-29 2011-01-13 Hitachi Cable Ltd 窒化物半導体基板およびその製造方法
KR101658838B1 (ko) * 2010-02-04 2016-10-04 엘지이노텍 주식회사 발광 소자 및 그 제조방법
US20110217505A1 (en) * 2010-02-05 2011-09-08 Teleolux Inc. Low-Defect nitride boules and associated methods
JP5598149B2 (ja) * 2010-08-09 2014-10-01 サンケン電気株式会社 化合物半導体層の形成方法
JP2012084836A (ja) * 2010-09-13 2012-04-26 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体発光素子を製造する方法、及びｉｉｉ族窒化物半導体発光素子
EP2888757A1 (en) 2012-08-23 2015-07-01 Sixpoint Materials Inc. Composite substrate of gallium nitride and metal oxide

Also Published As

Publication number Publication date
WO2014031153A1 (en) 2014-02-27
JP6541229B2 (ja) 2019-07-10
TW201418488A (zh) 2014-05-16
JP2018020960A (ja) 2018-02-08
EP2888757A1 (en) 2015-07-01
KR20150092082A (ko) 2015-08-12
JP2015527292A (ja) 2015-09-17
US9224817B2 (en) 2015-12-29
US20140054595A1 (en) 2014-02-27
US9431488B2 (en) 2016-08-30
KR102008494B1 (ko) 2019-08-07
US20150340242A1 (en) 2015-11-26
CN104781910A (zh) 2015-07-15
TWI619822B (zh) 2018-04-01
CN104781910B (zh) 2017-08-08

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