IN2015DN00478A - - Google Patents

Info

Publication number
IN2015DN00478A
IN2015DN00478A IN478DEN2015A IN2015DN00478A IN 2015DN00478 A IN2015DN00478 A IN 2015DN00478A IN 478DEN2015 A IN478DEN2015 A IN 478DEN2015A IN 2015DN00478 A IN2015DN00478 A IN 2015DN00478A
Authority
IN
India
Application number
Other languages
English (en)
Inventor
Jeffrey H Saunders
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of IN2015DN00478A publication Critical patent/IN2015DN00478A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8258—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213, H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
    • G01S7/03—Details of HF subsystems specially adapted therefor, e.g. common to transmitter and receiver
    • G01S7/032—Constructional details for solid-state radar subsystems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
IN478DEN2015 2012-07-25 2015-01-20 IN2015DN00478A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/558,255 US8665013B2 (en) 2012-07-25 2012-07-25 Monolithic integrated circuit chip integrating multiple devices
PCT/US2013/042760 WO2014018156A1 (en) 2012-07-25 2013-05-24 Monolithic integrated circuit chip integrating multiple devices

Publications (1)

Publication Number Publication Date
IN2015DN00478A true IN2015DN00478A (zh) 2015-06-26

Family

ID=48692639

Family Applications (1)

Application Number Title Priority Date Filing Date
IN478DEN2015 IN2015DN00478A (zh) 2012-07-25 2015-01-20

Country Status (8)

Country Link
US (1) US8665013B2 (zh)
EP (1) EP2878009B1 (zh)
JP (1) JP2015526902A (zh)
KR (1) KR101613187B1 (zh)
CN (1) CN104520986A (zh)
IN (1) IN2015DN00478A (zh)
TW (1) TWI565031B (zh)
WO (1) WO2014018156A1 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9287357B2 (en) 2014-06-16 2016-03-15 Samsung Electronics Co., Ltd. Integrated circuits with Si and non-Si nanosheet FET co-integration with low band-to-band tunneling and methods of fabricating the same
US9461114B2 (en) 2014-12-05 2016-10-04 Samsung Electronics Co., Ltd. Semiconductor devices with structures for suppression of parasitic bipolar effect in stacked nanosheet FETs and methods of fabricating the same
US9997476B2 (en) 2015-10-30 2018-06-12 Infineon Technologies Ag Multi-die package having different types of semiconductor dies attached to the same thermally conductive flange
GB2561390B (en) 2017-04-13 2020-03-11 Raytheon Systems Ltd Silicon carbide transistor
GB2561391B (en) * 2017-04-13 2020-03-11 Raytheon Systems Ltd Silicon carbide transistor with UV Sensitivity
GB2561388B (en) * 2017-04-13 2019-11-06 Raytheon Systems Ltd Silicon carbide integrated circuit
US10468454B1 (en) 2018-04-25 2019-11-05 Globalfoundries Singapore Pte. Ltd. GaN stack acoustic reflector and method for producing the same
US11515397B2 (en) 2020-07-21 2022-11-29 Globalfoundries U.S. Inc. III-V compound semiconductor layer stacks with electrical isolation provided by a trap-rich layer
US11469225B2 (en) 2020-10-16 2022-10-11 Globalfoundries U.S. Inc. Device integration schemes leveraging a bulk semiconductor substrate having a <111 > crystal orientation
US11569374B2 (en) 2020-12-02 2023-01-31 Globalfoundries U.S. Inc. Implanted isolation for device integration on a common substrate
US11581448B2 (en) 2021-04-01 2023-02-14 Raytheon Company Photoconductive semiconductor switch laterally fabricated alongside GaN on Si field effect transistors
US11710708B2 (en) 2021-08-19 2023-07-25 Raytheon Company On-chip EMF isolation of an integrated circuit coupled with photoconductive semiconductor switch under an on-chip faraday cage
US11784189B2 (en) 2021-08-20 2023-10-10 Globalfoundries U.S. Inc. Monolithic integration of diverse device types with shared electrical isolation
WO2024141604A1 (en) * 2022-12-28 2024-07-04 Cambridge Gan Devices Limited Mixed material power devices and driver circuits

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US5093667A (en) * 1989-10-16 1992-03-03 Itt Corporation T/R module with error correction
US6344663B1 (en) 1992-06-05 2002-02-05 Cree, Inc. Silicon carbide CMOS devices
JPH0888283A (ja) * 1994-09-16 1996-04-02 Fuji Electric Co Ltd 炭化ケイ素相補形ｍｏｓｆｅｔ
US7560322B2 (en) * 2004-10-27 2009-07-14 Northrop Grumman Systems Corporation Method of making a semiconductor structure for high power semiconductor devices
KR101118652B1 (ko) * 2004-12-17 2012-03-07 삼성전자주식회사 씨모스 공정과 통합될 수 있는 높은 이득을 갖는 바이폴라접합 트랜지스터 및 그 형성 방법
KR100750588B1 (ko) * 2005-05-04 2007-08-20 삼성전자주식회사 정전기 방전 보호회로
WO2006133225A2 (en) * 2005-06-06 2006-12-14 Multigig Inc. True time delay phase array radar using rotary clocks and electronic delay lines
JP4645313B2 (ja) * 2005-06-14 2011-03-09 富士電機システムズ株式会社 半導体装置
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US7821015B2 (en) * 2006-06-19 2010-10-26 Semisouth Laboratories, Inc. Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
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JPWO2008123213A1 (ja) * 2007-03-26 2010-07-15 国立大学法人京都大学 半導体装置及び半導体製造方法
JP4380726B2 (ja) * 2007-04-25 2009-12-09 株式会社デンソー ブリッジ回路における縦型ｍｏｓｆｅｔ制御方法
JP5401775B2 (ja) * 2007-08-31 2014-01-29 富士通株式会社 化合物半導体装置およびその製造方法
US7889011B2 (en) * 2008-06-30 2011-02-15 Texas Instruments Incorporated Output short circuit and load detection
JP2011035064A (ja) * 2009-07-30 2011-02-17 Renesas Electronics Corp 半導体装置、半導体基板、及び半導体基板の処理方法
US8212294B2 (en) * 2010-01-28 2012-07-03 Raytheon Company Structure having silicon CMOS transistors with column III-V transistors on a common substrate
US8389348B2 (en) 2010-09-14 2013-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanism of forming SiC crystalline on Si substrates to allow integration of GaN and Si electronics

Also Published As

Publication number Publication date
KR101613187B1 (ko) 2016-04-18
WO2014018156A8 (en) 2015-02-26
TWI565031B (zh) 2017-01-01
EP2878009A1 (en) 2015-06-03
EP2878009B1 (en) 2019-09-11
CN104520986A (zh) 2015-04-15
TW201405771A (zh) 2014-02-01
KR20150038274A (ko) 2015-04-08
US20140028387A1 (en) 2014-01-30
US8665013B2 (en) 2014-03-04
JP2015526902A (ja) 2015-09-10
WO2014018156A1 (en) 2014-01-30

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