IN2014DN03385A - - Google Patents
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- Publication number
- IN2014DN03385A IN2014DN03385A IN3385DEN2014A IN2014DN03385A IN 2014DN03385 A IN2014DN03385 A IN 2014DN03385A IN 3385DEN2014 A IN3385DEN2014 A IN 3385DEN2014A IN 2014DN03385 A IN2014DN03385 A IN 2014DN03385A
- Authority
- IN
- India
- Prior art keywords
- power
- decreased
- generator
- providing
- cathode element
- Prior art date
Links
- 230000003247 decreasing effect Effects 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/012—Modifications of generator to improve response time or to decrease power consumption
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/3467—Pulsed operation, e.g. HIPIMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Measuring Volume Flow (AREA)
- Fluidized-Bed Combustion And Resonant Combustion (AREA)
- Plasma Technology (AREA)
- Electrostatic Separation (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102011117177A DE102011117177A1 (de) | 2011-10-28 | 2011-10-28 | Verfahren zur Bereitstellung sequenzieller Leistungspulse |
| PCT/EP2012/004203 WO2013060415A1 (de) | 2011-10-28 | 2012-10-08 | Verfahren zur bereitstellung sequenzieller leistungspulse |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2014DN03385A true IN2014DN03385A (de) | 2015-06-05 |
Family
ID=47177865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN3385DEN2014 IN2014DN03385A (de) | 2011-10-28 | 2012-10-08 |
Country Status (24)
| Country | Link |
|---|---|
| US (1) | US9906210B2 (de) |
| EP (1) | EP2771901B1 (de) |
| JP (1) | JP6236651B2 (de) |
| KR (1) | KR101930579B1 (de) |
| CN (1) | CN104246967B (de) |
| AR (1) | AR088318A1 (de) |
| BR (1) | BR112014010115B1 (de) |
| CA (1) | CA2853699C (de) |
| DE (1) | DE102011117177A1 (de) |
| DK (1) | DK2771901T3 (de) |
| ES (1) | ES2705974T3 (de) |
| HU (1) | HUE043149T2 (de) |
| IN (1) | IN2014DN03385A (de) |
| MX (1) | MX360116B (de) |
| MY (1) | MY175563A (de) |
| PH (1) | PH12014500941A1 (de) |
| PL (1) | PL2771901T3 (de) |
| PT (1) | PT2771901T (de) |
| RU (1) | RU2631670C2 (de) |
| SG (1) | SG11201401877QA (de) |
| SI (1) | SI2771901T1 (de) |
| TR (1) | TR201900589T4 (de) |
| TW (1) | TWI564415B (de) |
| WO (1) | WO2013060415A1 (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102011121770A1 (de) * | 2011-12-21 | 2013-06-27 | Oerlikon Trading Ag, Trübbach | Homogenes HIPIMS-Beschichtungsverfahren |
| DE102013011075A1 (de) | 2013-07-03 | 2015-01-08 | Oerlikon Trading Ag | TiB2 Schichten und ihre Herstellung |
| DE102013011071A1 (de) | 2013-07-03 | 2015-01-08 | Oerlikon Trading Ag, Trübbach | TixSi1-xN Schichten mit CryAl1-yN Haftschicht und ihre Herstellung |
| DE102013011073A1 (de) | 2013-07-03 | 2015-01-08 | Oerlikon Trading Ag, Trübbach | TlxSi1-xN Schichten und ihre Herstellung |
| CA2916784C (en) * | 2013-07-03 | 2018-07-31 | Oerlikon Surface Solutions Ag, Trubbach | Tixsi1-xn layers and their production |
| DE102013011072A1 (de) * | 2013-07-03 | 2015-01-08 | Oerlikon Trading Ag, Trübbach | Targetpräparation |
| KR102117739B1 (ko) | 2016-09-30 | 2020-06-09 | 주식회사 엘지화학 | 음극지지체형 고체산화물 연료전지 제조방법 |
| EP3406761A1 (de) | 2017-05-24 | 2018-11-28 | Walter Ag | Verfahren zur herstellung eines beschichteten schneidwerkzeugs und beschichtetes schneidwerkzeug |
| EP3406751A1 (de) | 2017-05-24 | 2018-11-28 | Walter Ag | Beschichtetes schneidwerkzeug und verfahren zur dessen herstellung |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6141766A (ja) * | 1984-08-06 | 1986-02-28 | Hitachi Ltd | スパツタリング方法およびスパツタ−装置 |
| JPH07116596B2 (ja) * | 1989-02-15 | 1995-12-13 | 株式会社日立製作所 | 薄膜形成方法、及びその装置 |
| EP0822996B1 (de) * | 1995-04-25 | 2003-07-02 | VON ARDENNE ANLAGENTECHNIK GmbH | Sputtersystem mit zylindrisch rotierender mit wechselstrom gespeister magnetron |
| DE19651615C1 (de) * | 1996-12-12 | 1997-07-10 | Fraunhofer Ges Forschung | Verfahren zum Aufbringen von Kohlenstoffschichten durch reaktives Magnetron-Sputtern |
| US6063254A (en) * | 1997-04-30 | 2000-05-16 | The Alta Group, Inc. | Method for producing titanium crystal and titanium |
| US6878242B2 (en) * | 2003-04-08 | 2005-04-12 | Guardian Industries Corp. | Segmented sputtering target and method/apparatus for using same |
| US20050103620A1 (en) * | 2003-11-19 | 2005-05-19 | Zond, Inc. | Plasma source with segmented magnetron cathode |
| JP2009511742A (ja) * | 2005-10-13 | 2009-03-19 | ナムローゼ・フェンノートシャップ・ベーカート・ソシエテ・アノニム | スパッタリングによって被膜を堆積する方法 |
| DE102006017382A1 (de) | 2005-11-14 | 2007-05-16 | Itg Induktionsanlagen Gmbh | Verfahren und Vorrichtung zum Beschichten und/oder zur Behandlung von Oberflächen |
| WO2008071732A2 (en) * | 2006-12-12 | 2008-06-19 | Oc Oerlikon Balzers Ag | Rf substrate bias with high power impulse magnetron sputtering (hipims) |
| US20080197015A1 (en) * | 2007-02-16 | 2008-08-21 | Terry Bluck | Multiple-magnetron sputtering source with plasma confinement |
| EP2272080B1 (de) * | 2008-04-28 | 2012-08-01 | CemeCon AG | Vorrichtung und verfahren zum vorbehandeln und beschichten von körpern |
| JP5037475B2 (ja) * | 2008-11-11 | 2012-09-26 | 株式会社神戸製鋼所 | スパッタ装置 |
| DE202010001497U1 (de) | 2010-01-29 | 2010-04-22 | Hauzer Techno-Coating B.V. | Beschichtungsvorrichtung mit einer HIPIMS-Leistungsquelle |
| DE102011018363A1 (de) | 2011-04-20 | 2012-10-25 | Oerlikon Trading Ag, Trübbach | Hochleistungszerstäubungsquelle |
| DE102011121770A1 (de) * | 2011-12-21 | 2013-06-27 | Oerlikon Trading Ag, Trübbach | Homogenes HIPIMS-Beschichtungsverfahren |
| JP7116596B2 (ja) * | 2018-05-31 | 2022-08-10 | 川崎重工業株式会社 | リード線挿入装置およびリード線挿入方法 |
-
2011
- 2011-10-28 DE DE102011117177A patent/DE102011117177A1/de not_active Withdrawn
-
2012
- 2012-10-08 PT PT12784435T patent/PT2771901T/pt unknown
- 2012-10-08 HU HUE12784435A patent/HUE043149T2/hu unknown
- 2012-10-08 KR KR1020147014022A patent/KR101930579B1/ko active Active
- 2012-10-08 CA CA2853699A patent/CA2853699C/en active Active
- 2012-10-08 MY MYPI2014001218A patent/MY175563A/en unknown
- 2012-10-08 JP JP2014537511A patent/JP6236651B2/ja active Active
- 2012-10-08 ES ES12784435T patent/ES2705974T3/es active Active
- 2012-10-08 RU RU2014121388A patent/RU2631670C2/ru active
- 2012-10-08 PH PH1/2014/500941A patent/PH12014500941A1/en unknown
- 2012-10-08 SG SG11201401877QA patent/SG11201401877QA/en unknown
- 2012-10-08 DK DK12784435.5T patent/DK2771901T3/en active
- 2012-10-08 CN CN201280065357.7A patent/CN104246967B/zh active Active
- 2012-10-08 BR BR112014010115-9A patent/BR112014010115B1/pt not_active IP Right Cessation
- 2012-10-08 EP EP12784435.5A patent/EP2771901B1/de active Active
- 2012-10-08 SI SI201231499T patent/SI2771901T1/sl unknown
- 2012-10-08 MX MX2014005134A patent/MX360116B/es active IP Right Grant
- 2012-10-08 PL PL12784435T patent/PL2771901T3/pl unknown
- 2012-10-08 WO PCT/EP2012/004203 patent/WO2013060415A1/de not_active Ceased
- 2012-10-08 IN IN3385DEN2014 patent/IN2014DN03385A/en unknown
- 2012-10-08 TR TR2019/00589T patent/TR201900589T4/tr unknown
- 2012-10-08 US US14/354,698 patent/US9906210B2/en active Active
- 2012-10-12 AR ARP120103800A patent/AR088318A1/es active IP Right Grant
- 2012-10-26 TW TW101139611A patent/TWI564415B/zh not_active IP Right Cessation
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