IN2014CN02998A - - Google Patents

Info

Publication number
IN2014CN02998A
IN2014CN02998A IN2998CHN2014A IN2014CN02998A IN 2014CN02998 A IN2014CN02998 A IN 2014CN02998A IN 2998CHN2014 A IN2998CHN2014 A IN 2998CHN2014A IN 2014CN02998 A IN2014CN02998 A IN 2014CN02998A
Authority
IN
India
Prior art keywords
metal layer
via structure
substrate
electromechanical systems
systems device
Prior art date
Application number
Inventor
Yaoling Pan
Lixia Zhou
Original Assignee
Qualcomm Mems Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Mems Technologies Inc filed Critical Qualcomm Mems Technologies Inc
Publication of IN2014CN02998A publication Critical patent/IN2014CN02998A/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0006—Interconnects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate

Abstract

This disclosure provides systems methods and apparatus for a via structure. In one aspect an apparatus includes a substrate and a first electromechanical systems device on a surface of the substrate. The first electromechanical systems device includes a first metal layer and a second metal layer. A first via structure can be included on the surface of the substrate. The first via structure includes the first metal layer the second metal layer and a third metal layer. The first metal layer of the first electromechanical systems device may be the same metal layer as the first metal layer of the first via structure.
IN2998CHN2014 2011-10-20 2012-10-17 IN2014CN02998A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/278,080 US10131534B2 (en) 2011-10-20 2011-10-20 Stacked vias for vertical integration
PCT/US2012/060648 WO2013059345A1 (en) 2011-10-20 2012-10-17 Stacked vias for vertical integration

Publications (1)

Publication Number Publication Date
IN2014CN02998A true IN2014CN02998A (en) 2015-07-03

Family

ID=47138180

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2998CHN2014 IN2014CN02998A (en) 2011-10-20 2012-10-17

Country Status (7)

Country Link
US (1) US10131534B2 (en)
EP (1) EP2768767A1 (en)
JP (1) JP2014534470A (en)
KR (1) KR20140083042A (en)
CN (2) CN110228785A (en)
IN (1) IN2014CN02998A (en)
WO (1) WO2013059345A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180123245A1 (en) * 2016-10-28 2018-05-03 Broadcom Corporation Broadband antenna array for wireless communications
CN108231747A (en) * 2016-12-21 2018-06-29 中芯国际集成电路制造(上海)有限公司 Semiconductor devices and preparation method thereof, electronic device
EP3598235A1 (en) 2018-07-18 2020-01-22 ASML Netherlands B.V. Metrology apparatus and method for determining a characteristic relating to one or more structures on a substrate

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US5917645A (en) * 1997-03-28 1999-06-29 Daewoo Electronics Co., Ltd. Thin film actuated mirror array in an optical projection system and method for manufacturing the same
US6320244B1 (en) * 1999-01-12 2001-11-20 Agere Systems Guardian Corp. Integrated circuit device having dual damascene capacitor
US6562656B1 (en) 2001-06-25 2003-05-13 Thin Film Module, Inc. Cavity down flip chip BGA
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US7081647B2 (en) * 2003-09-29 2006-07-25 Matsushita Electric Industrial Co., Ltd. Microelectromechanical system and method for fabricating the same
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JP4608294B2 (en) 2004-11-30 2011-01-12 日亜化学工業株式会社 RESIN MOLDED BODY, SURFACE MOUNTED LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING THEM
JP4724488B2 (en) 2005-02-25 2011-07-13 日立オートモティブシステムズ株式会社 Integrated microelectromechanical system
JP5105168B2 (en) * 2005-11-02 2012-12-19 イビデン株式会社 Multilayer printed wiring board
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US20080029898A1 (en) 2006-08-01 2008-02-07 Farooq Mukta G Via stack structures
US7733552B2 (en) 2007-03-21 2010-06-08 Qualcomm Mems Technologies, Inc MEMS cavity-coating layers and methods
US7570415B2 (en) 2007-08-07 2009-08-04 Qualcomm Mems Technologies, Inc. MEMS device and interconnects for same
US8022896B2 (en) * 2007-08-08 2011-09-20 Qualcomm Mems Technologies, Inc. ESD protection for MEMS display panels
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JP5125531B2 (en) 2008-01-16 2013-01-23 富士通セミコンダクター株式会社 Wiring substrate and semiconductor device
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TW201102340A (en) * 2009-07-10 2011-01-16 Nat Univ Tsing Hua A method for fabricating a multilayer microstructure with balancing residual stress capability
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JP5134027B2 (en) * 2010-02-18 2013-01-30 北陸電気工業株式会社 Piezoelectric three-axis acceleration sensor

Also Published As

Publication number Publication date
WO2013059345A1 (en) 2013-04-25
EP2768767A1 (en) 2014-08-27
US10131534B2 (en) 2018-11-20
JP2014534470A (en) 2014-12-18
US20130100143A1 (en) 2013-04-25
KR20140083042A (en) 2014-07-03
CN110228785A (en) 2019-09-13
CN103974896A (en) 2014-08-06

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