IN2013MU03516A - - Google Patents
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- Publication number
- IN2013MU03516A IN2013MU03516A IN3516MU2013A IN2013MU03516A IN 2013MU03516 A IN2013MU03516 A IN 2013MU03516A IN 3516MU2013 A IN3516MU2013 A IN 3516MU2013A IN 2013MU03516 A IN2013MU03516 A IN 2013MU03516A
- Authority
- IN
- India
- Prior art keywords
- monocrystalline silicon
- semiconductor substrate
- doping unit
- dopant doped
- layer including
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000002019 doping agent Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/13—Photovoltaic cells having absorbing layers comprising graded bandgaps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261725437P | 2012-11-12 | 2012-11-12 | |
| US13/949,147 US20140130854A1 (en) | 2012-11-12 | 2013-07-23 | Photoelectric device and the manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2013MU03516A true IN2013MU03516A (enrdf_load_stackoverflow) | 2015-07-31 |
Family
ID=49123763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN3516MU2013 IN2013MU03516A (enrdf_load_stackoverflow) | 2012-11-12 | 2013-11-08 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20140130854A1 (enrdf_load_stackoverflow) |
| EP (1) | EP2731146B1 (enrdf_load_stackoverflow) |
| JP (1) | JP6363335B2 (enrdf_load_stackoverflow) |
| KR (1) | KR102148427B1 (enrdf_load_stackoverflow) |
| CN (1) | CN103811572B (enrdf_load_stackoverflow) |
| IN (1) | IN2013MU03516A (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104009114B (zh) * | 2013-05-22 | 2016-08-10 | 江苏爱多光伏科技有限公司 | 准单晶硅太阳能电池片的制造方法 |
| US9559236B2 (en) * | 2014-09-24 | 2017-01-31 | Sunpower Corporation | Solar cell fabricated by simplified deposition process |
| CN106784069A (zh) * | 2015-11-20 | 2017-05-31 | 上海神舟新能源发展有限公司 | 背表面隧道氧化钝化交指式背结背接触电池制作方法 |
| CN105390555A (zh) * | 2015-12-25 | 2016-03-09 | 常州天合光能有限公司 | 全背极太阳电池结构及其制备方法 |
| US9871150B1 (en) * | 2016-07-01 | 2018-01-16 | Sunpower Corporation | Protective region for metallization of solar cells |
| EP3340317B1 (en) * | 2016-10-25 | 2020-04-01 | Shin-Etsu Chemical Co., Ltd | High photoelectric conversion efficiency solar-cell and manufacturing method for high photoelectric conversion efficiency solar-cell |
| CN116666468B (zh) * | 2023-08-02 | 2023-10-27 | 天合光能股份有限公司 | 背接触电池及太阳电池组件 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3762144B2 (ja) * | 1998-06-18 | 2006-04-05 | キヤノン株式会社 | Ｓｏｉ基板の作製方法 |
| DE10127217B4 (de) * | 2001-06-05 | 2005-09-15 | Infineon Technologies Ag | Verfahren zur Herstellung lagegenauer großflächiger Membranmasken |
| US6998288B1 (en) * | 2003-10-03 | 2006-02-14 | Sunpower Corporation | Use of doped silicon dioxide in the fabrication of solar cells |
| US7468485B1 (en) * | 2005-08-11 | 2008-12-23 | Sunpower Corporation | Back side contact solar cell with doped polysilicon regions |
| US7737357B2 (en) * | 2006-05-04 | 2010-06-15 | Sunpower Corporation | Solar cell having doped semiconductor heterojunction contacts |
| JP2009152222A (ja) * | 2006-10-27 | 2009-07-09 | Kyocera Corp | 太陽電池素子の製造方法 |
| US20080173347A1 (en) * | 2007-01-23 | 2008-07-24 | General Electric Company | Method And Apparatus For A Semiconductor Structure |
| JP5226255B2 (ja) * | 2007-07-13 | 2013-07-03 | シャープ株式会社 | 太陽電池の製造方法 |
| WO2009067483A1 (en) * | 2007-11-19 | 2009-05-28 | Applied Materials, Inc. | Solar cell contact formation process using a patterned etchant material |
| JP2008085374A (ja) * | 2007-12-19 | 2008-04-10 | Sanyo Electric Co Ltd | 光起電力素子 |
| US20110000532A1 (en) * | 2008-01-30 | 2011-01-06 | Kyocera Corporation | Solar Cell Device and Method of Manufacturing Solar Cell Device |
| US7851698B2 (en) * | 2008-06-12 | 2010-12-14 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
| US8207444B2 (en) * | 2008-07-01 | 2012-06-26 | Sunpower Corporation | Front contact solar cell with formed electrically conducting layers on the front side and backside |
| US8790957B2 (en) * | 2010-03-04 | 2014-07-29 | Sunpower Corporation | Method of fabricating a back-contact solar cell and device thereof |
| US8686283B2 (en) * | 2010-05-04 | 2014-04-01 | Silevo, Inc. | Solar cell with oxide tunneling junctions |
| KR101702982B1 (ko) * | 2010-07-19 | 2017-02-06 | 삼성에스디아이 주식회사 | 태양 전지 및 그 제조 방법 |
| US20120060904A1 (en) * | 2010-09-13 | 2012-03-15 | Smith David D | Fabrication Of Solar Cells With Silicon Nano-Particles |
| US20120073650A1 (en) * | 2010-09-24 | 2012-03-29 | David Smith | Method of fabricating an emitter region of a solar cell |
| US8492253B2 (en) * | 2010-12-02 | 2013-07-23 | Sunpower Corporation | Method of forming contacts for a back-contact solar cell |
| JP2012186229A (ja) * | 2011-03-03 | 2012-09-27 | Univ Of Tokyo | 単結晶シリコン薄膜の製造方法、単結晶シリコン薄膜デバイスの製造方法及び太陽電池デバイスの製造方法並びに単結晶シリコン薄膜及びそれを用いた単結晶シリコン薄膜デバイス及び太陽電池デバイス |
-
2013
- 2013-07-23 US US13/949,147 patent/US20140130854A1/en not_active Abandoned
- 2013-09-10 EP EP13183814.6A patent/EP2731146B1/en active Active
- 2013-09-13 KR KR1020130110611A patent/KR102148427B1/ko active Active
- 2013-09-25 JP JP2013197748A patent/JP6363335B2/ja active Active
- 2013-11-08 IN IN3516MU2013 patent/IN2013MU03516A/en unknown
- 2013-11-12 CN CN201310560386.7A patent/CN103811572B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2731146A2 (en) | 2014-05-14 |
| JP6363335B2 (ja) | 2018-07-25 |
| JP2014096574A (ja) | 2014-05-22 |
| CN103811572A (zh) | 2014-05-21 |
| US20140130854A1 (en) | 2014-05-15 |
| EP2731146B1 (en) | 2018-04-11 |
| CN103811572B (zh) | 2017-12-12 |
| EP2731146A3 (en) | 2014-09-03 |
| KR102148427B1 (ko) | 2020-08-26 |
| KR20140061953A (ko) | 2014-05-22 |
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