IN188901B - - Google Patents
Info
- Publication number
- IN188901B IN188901B IN637CA1996A IN188901B IN 188901 B IN188901 B IN 188901B IN 637CA1996 A IN637CA1996 A IN 637CA1996A IN 188901 B IN188901 B IN 188901B
- Authority
- IN
- India
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19520043 | 1995-05-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN188901B true IN188901B (instruction) | 2002-11-16 |
Family
ID=7763373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN637CA1996 IN188901B (instruction) | 1995-05-31 | 1996-04-08 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US5953361A (instruction) |
| EP (1) | EP0829121B1 (instruction) |
| JP (1) | JP3469583B2 (instruction) |
| KR (1) | KR19990022008A (instruction) |
| CN (1) | CN1191638A (instruction) |
| DE (1) | DE59600746D1 (instruction) |
| ES (1) | ES2124095T3 (instruction) |
| IN (1) | IN188901B (instruction) |
| TW (1) | TW304310B (instruction) |
| WO (1) | WO1996038890A1 (instruction) |
Families Citing this family (56)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999005728A1 (fr) | 1997-07-25 | 1999-02-04 | Nichia Chemical Industries, Ltd. | Dispositif a semi-conducteur en nitrure |
| JP3770014B2 (ja) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| EP1168539B1 (en) | 1999-03-04 | 2009-12-16 | Nichia Corporation | Nitride semiconductor laser device |
| US6668000B2 (en) | 1999-07-15 | 2003-12-23 | University Of Maryland, Baltimore County | System and method of optically testing multiple edge-emitting semiconductor lasers residing on a common wafer |
| JP3842976B2 (ja) * | 2000-03-17 | 2006-11-08 | 富士通株式会社 | 分布帰還型半導体レーザとその製造方法 |
| JP3745985B2 (ja) * | 2001-01-24 | 2006-02-15 | 古河電気工業株式会社 | 複素結合型の分布帰還型半導体レーザ素子 |
| US9372306B1 (en) | 2001-10-09 | 2016-06-21 | Infinera Corporation | Method of achieving acceptable performance in and fabrication of a monolithic photonic integrated circuit (PIC) with integrated arrays of laser sources and modulators employing an extended identical active layer (EIAL) |
| US6903379B2 (en) * | 2001-11-16 | 2005-06-07 | Gelcore Llc | GaN based LED lighting extraction efficiency using digital diffractive phase grating |
| JP3681693B2 (ja) * | 2002-02-21 | 2005-08-10 | Ｎｅｃ化合物デバイス株式会社 | 半導体レーザ及びこの素子を含む半導体光集積回路 |
| US7263291B2 (en) * | 2002-07-09 | 2007-08-28 | Azna Llc | Wavelength division multiplexing source using multifunctional filters |
| US7663762B2 (en) * | 2002-07-09 | 2010-02-16 | Finisar Corporation | High-speed transmission system comprising a coupled multi-cavity optical discriminator |
| US10012797B1 (en) | 2002-10-08 | 2018-07-03 | Infinera Corporation | Monolithic photonic integrated circuit (PIC) with a plurality of integrated arrays of laser sources and modulators employing an extended identical active layer (EIAL) |
| US7280721B2 (en) * | 2002-11-06 | 2007-10-09 | Azna Llc | Multi-ring resonator implementation of optical spectrum reshaper for chirp managed laser technology |
| US7564889B2 (en) * | 2002-11-06 | 2009-07-21 | Finisar Corporation | Adiabatically frequency modulated source |
| US7536113B2 (en) * | 2002-11-06 | 2009-05-19 | Finisar Corporation | Chirp managed directly modulated laser with bandwidth limiting optical spectrum reshaper |
| US8792531B2 (en) | 2003-02-25 | 2014-07-29 | Finisar Corporation | Optical beam steering for tunable laser applications |
| US7042921B2 (en) * | 2003-07-11 | 2006-05-09 | Emcore Corporation | Complex coupled single mode laser with dual active region |
| KR100663589B1 (ko) * | 2004-11-24 | 2007-01-02 | 삼성전자주식회사 | 분포귀환 반도체 레이저의 제조방법 |
| US9153645B2 (en) | 2005-05-17 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
| US8324660B2 (en) | 2005-05-17 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
| JP5481067B2 (ja) | 2005-07-26 | 2014-04-23 | 台湾積體電路製造股▲ふん▼有限公司 | 代替活性エリア材料の集積回路への組み込みのための解決策 |
| US7638842B2 (en) | 2005-09-07 | 2009-12-29 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures on insulators |
| US20070054467A1 (en) * | 2005-09-07 | 2007-03-08 | Amberwave Systems Corporation | Methods for integrating lattice-mismatched semiconductor structure on insulators |
| US7777250B2 (en) | 2006-03-24 | 2010-08-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures and related methods for device fabrication |
| EP2062290B1 (en) | 2006-09-07 | 2019-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Defect reduction using aspect ratio trapping |
| US7799592B2 (en) | 2006-09-27 | 2010-09-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tri-gate field-effect transistors formed by aspect ratio trapping |
| US7875958B2 (en) * | 2006-09-27 | 2011-01-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures |
| US20080187018A1 (en) | 2006-10-19 | 2008-08-07 | Amberwave Systems Corporation | Distributed feedback lasers formed via aspect ratio trapping |
| US7962045B2 (en) | 2006-12-22 | 2011-06-14 | Finisar Corporation | Optical transmitter having a widely tunable directly modulated laser and periodic optical spectrum reshaping element |
| US7941057B2 (en) | 2006-12-28 | 2011-05-10 | Finisar Corporation | Integral phase rule for reducing dispersion errors in an adiabatically chirped amplitude modulated signal |
| US8131157B2 (en) | 2007-01-22 | 2012-03-06 | Finisar Corporation | Method and apparatus for generating signals with increased dispersion tolerance using a directly modulated laser transmitter |
| CN101641846B (zh) | 2007-02-02 | 2012-02-08 | 菲尼萨公司 | 发射器模块中的用于光电子部件的温度稳定封装 |
| US8027593B2 (en) | 2007-02-08 | 2011-09-27 | Finisar Corporation | Slow chirp compensation for enhanced signal bandwidth and transmission performances in directly modulated lasers |
| US7991291B2 (en) | 2007-02-08 | 2011-08-02 | Finisar Corporation | WDM PON based on DML |
| US8204386B2 (en) | 2007-04-06 | 2012-06-19 | Finisar Corporation | Chirped laser with passive filter element for differential phase shift keying generation |
| US7991297B2 (en) | 2007-04-06 | 2011-08-02 | Finisar Corporation | Chirped laser with passive filter element for differential phase shift keying generation |
| US9508890B2 (en) | 2007-04-09 | 2016-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photovoltaics on silicon |
| US8304805B2 (en) | 2009-01-09 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor diodes fabricated by aspect ratio trapping with coalesced films |
| US7825328B2 (en) | 2007-04-09 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride-based multi-junction solar cell modules and methods for making the same |
| US8237151B2 (en) | 2009-01-09 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode-based devices and methods for making the same |
| US8329541B2 (en) | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
| US8344242B2 (en) | 2007-09-07 | 2013-01-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-junction solar cells |
| US8160455B2 (en) | 2008-01-22 | 2012-04-17 | Finisar Corporation | Method and apparatus for generating signals with increased dispersion tolerance using a directly modulated laser transmitter |
| US8260150B2 (en) | 2008-04-25 | 2012-09-04 | Finisar Corporation | Passive wave division multiplexed transmitter having a directly modulated laser array |
| TWI362769B (en) | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
| US8183667B2 (en) | 2008-06-03 | 2012-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial growth of crystalline material |
| US8274097B2 (en) | 2008-07-01 | 2012-09-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reduction of edge effects from aspect ratio trapping |
| US8981427B2 (en) | 2008-07-15 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing of small composite semiconductor materials |
| US20100072515A1 (en) | 2008-09-19 | 2010-03-25 | Amberwave Systems Corporation | Fabrication and structures of crystalline material |
| KR101216541B1 (ko) | 2008-09-19 | 2012-12-31 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 에피텍셜층 과성장에 의한 장치의 형성 |
| US8253211B2 (en) | 2008-09-24 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor sensor structures with reduced dislocation defect densities |
| DE102008054217A1 (de) * | 2008-10-31 | 2010-05-06 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
| CN102379046B (zh) | 2009-04-02 | 2015-06-17 | 台湾积体电路制造股份有限公司 | 从晶体材料的非极性平面形成的器件及其制作方法 |
| US8199785B2 (en) | 2009-06-30 | 2012-06-12 | Finisar Corporation | Thermal chirp compensation in a chirp managed laser |
| CN101908715A (zh) * | 2010-08-03 | 2010-12-08 | 中国科学院长春光学精密机械与物理研究所 | 利用光栅实现锁相的半导体激光器 |
| US11133649B2 (en) * | 2019-06-21 | 2021-09-28 | Palo Alto Research Center Incorporated | Index and gain coupled distributed feedback laser |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4786951A (en) * | 1985-02-12 | 1988-11-22 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor optical element and a process for producing the same |
| EP0507956B1 (en) * | 1990-10-19 | 1996-02-28 | Optical Measurement Technology Development Co. Ltd. | Distributed feedback semiconductor laser |
| IT1245541B (it) * | 1991-05-13 | 1994-09-29 | Cselt Centro Studi Lab Telecom | Laser a semiconduttore a reazione distribuita ed accoppiamento di guadagno ,e procedimento per la sua fabbricazione |
| DE4124872A1 (de) * | 1991-07-26 | 1993-01-28 | Siemens Ag | Halbleiterbauelement auf einem strukturierten inp-substrat |
| US5208824A (en) * | 1991-12-12 | 1993-05-04 | At&T Bell Laboratories | Article comprising a DFB semiconductor laser |
| US5452318A (en) * | 1993-12-16 | 1995-09-19 | Northern Telecom Limited | Gain-coupled DFB laser with index coupling compensation |
| US5506859A (en) * | 1995-02-16 | 1996-04-09 | At&T Corp. | Article comprising a DFB laser with loss coupling |
-
1996
- 1996-04-06 TW TW085104027A patent/TW304310B/zh active
- 1996-04-08 IN IN637CA1996 patent/IN188901B/en unknown
- 1996-05-13 KR KR1019970708483A patent/KR19990022008A/ko not_active Abandoned
- 1996-05-13 EP EP96914857A patent/EP0829121B1/de not_active Expired - Lifetime
- 1996-05-13 ES ES96914857T patent/ES2124095T3/es not_active Expired - Lifetime
- 1996-05-13 DE DE59600746T patent/DE59600746D1/de not_active Expired - Fee Related
- 1996-05-13 US US08/973,063 patent/US5953361A/en not_active Expired - Lifetime
- 1996-05-13 CN CN96195653A patent/CN1191638A/zh active Pending
- 1996-05-13 JP JP53608496A patent/JP3469583B2/ja not_active Expired - Fee Related
- 1996-05-13 WO PCT/DE1996/000837 patent/WO1996038890A1/de active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| EP0829121B1 (de) | 1998-10-28 |
| US5953361A (en) | 1999-09-14 |
| TW304310B (instruction) | 1997-05-01 |
| EP0829121A1 (de) | 1998-03-18 |
| JP3469583B2 (ja) | 2003-11-25 |
| WO1996038890A1 (de) | 1996-12-05 |
| ES2124095T3 (es) | 1999-01-16 |
| KR19990022008A (ko) | 1999-03-25 |
| CN1191638A (zh) | 1998-08-26 |
| JPH11505965A (ja) | 1999-05-25 |
| DE59600746D1 (de) | 1998-12-03 |