IN165235B - - Google Patents

Info

Publication number
IN165235B
IN165235B IN628/MAS/85A IN628MA1985A IN165235B IN 165235 B IN165235 B IN 165235B IN 628MA1985 A IN628MA1985 A IN 628MA1985A IN 165235 B IN165235 B IN 165235B
Authority
IN
India
Application number
IN628/MAS/85A
Other languages
English (en)
Inventor
Saito Hiroshi
Sakamoto Noboru
Fukuya Hiroshi
Iwata Yoshito
Original Assignee
Nippon Kokan Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Kokan Kk filed Critical Nippon Kokan Kk
Publication of IN165235B publication Critical patent/IN165235B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B1/00—Preliminary treatment of ores or scrap
    • C22B1/14—Agglomerating; Briquetting; Binding; Granulating
    • C22B1/16—Sintering; Agglomerating
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B1/00—Preliminary treatment of ores or scrap
    • C22B1/14—Agglomerating; Briquetting; Binding; Granulating
    • C22B1/24—Binding; Briquetting ; Granulating
    • C22B1/2406—Binding; Briquetting ; Granulating pelletizing
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B1/00—Preliminary treatment of ores or scrap
    • C22B1/14—Agglomerating; Briquetting; Binding; Granulating
    • C22B1/24—Binding; Briquetting ; Granulating
    • C22B1/242—Binding; Briquetting ; Granulating with binders
    • C22B1/243—Binding; Briquetting ; Granulating with binders inorganic

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Geology (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacture And Refinement Of Metals (AREA)
IN628/MAS/85A 1984-10-31 1985-08-13 IN165235B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59227944A JPS61106728A (ja) 1984-10-31 1984-10-31 塊成鉱及びその製造方法

Publications (1)

Publication Number Publication Date
IN165235B true IN165235B (de) 1989-09-02

Family

ID=16868724

Family Applications (1)

Application Number Title Priority Date Filing Date
IN628/MAS/85A IN165235B (de) 1984-10-31 1985-08-13

Country Status (10)

Country Link
US (2) US4722750A (de)
EP (1) EP0199818B1 (de)
JP (1) JPS61106728A (de)
KR (1) KR900001095B1 (de)
AU (1) AU572651B2 (de)
BR (1) BR8506975A (de)
CA (1) CA1246343A (de)
DE (1) DE3576534D1 (de)
IN (1) IN165235B (de)
WO (1) WO1986002668A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6237325A (ja) * 1985-06-27 1987-02-18 Nippon Kokan Kk <Nkk> 焼成塊成鉱およびその製造方法
AU600777B2 (en) * 1986-12-15 1990-08-23 Jfe Steel Corporation Method for manufacturing agglomerates of fired pellets
JPS6421788A (en) * 1987-07-16 1989-01-25 Nec Corp Semiconductor memory device
JPS6456828A (en) * 1987-08-28 1989-03-03 Nippon Kokan Kk Primary crushing method for calcined lump ore
US4986765A (en) * 1989-02-21 1991-01-22 Amp Incorporated Insertable latch means for use in an electrical connector
JPH089739B2 (ja) * 1989-08-23 1996-01-31 日本鋼管株式会社 焼成塊成鉱の製造方法
DE69227094T2 (de) * 1991-12-24 1999-03-11 Tokyo Gas Co. Ltd., Tokio/Tokyo Brenner mit Oberflächenverbrennung
US5814164A (en) * 1994-11-09 1998-09-29 American Scientific Materials Technologies L.P. Thin-walled, monolithic iron oxide structures made from steels, and methods for manufacturing such structures
US6461562B1 (en) 1999-02-17 2002-10-08 American Scientific Materials Technologies, Lp Methods of making sintered metal oxide articles
KR100415926B1 (ko) * 1999-11-20 2004-01-31 주식회사 포스코 함철 더스트류를 고배합한 소결조업에서 황산화물저감효과가 우수한 미니펠릿의 구조 및 그 제조 방법
KR20010048809A (ko) * 1999-11-29 2001-06-15 이구택 미분생석회를 이용한 소결광 제조방법
US6226891B1 (en) * 1999-12-06 2001-05-08 Daniel R. Chapman Method and apparatus for drying iron ore pellets
AT413543B (de) * 2004-03-03 2006-03-15 Voest Alpine Ind Anlagen Verfahren zur herstellung einer sinterrohmischung
KR100723213B1 (ko) 2005-11-15 2007-05-29 주식회사 포스코 이중 디스크형 조립기
JP5817644B2 (ja) * 2012-05-24 2015-11-18 新日鐵住金株式会社 焼結原料へのバインダーの添加方法
CN110804449B (zh) * 2019-11-20 2020-10-27 四川大学 铁酸钙与非焦煤共焦化制备焦炭的方法
CN113483554B (zh) * 2021-05-14 2022-06-07 中冶长天国际工程有限责任公司 一种高炉精料用块矿的烘干装置及烘干方法
CN114737052B (zh) * 2022-03-30 2023-09-26 鞍钢股份有限公司 一种镁质熔剂性球团的制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3868246A (en) * 1971-07-22 1975-02-25 Dravo Corp Pellet production process
JPS5319531B2 (de) * 1972-02-28 1978-06-21
US4082540A (en) * 1974-12-30 1978-04-04 Nippon Steel Corporation Material for sintering emitting a lesser amount of nitrogen oxide and a method for manufacturing the same
IT1061428B (it) * 1975-05-26 1983-02-28 Kobe Steel Ltd Pallottola di minerale di ferroche ha una forma specifica metodo per fabbricare la medesima e metodo per il funzionamento di un altoforno
JPS5319531A (en) * 1976-08-05 1978-02-22 Matsushita Electric Ind Co Ltd Method of producing lead battery positive plate lattice
JPS57200529A (en) * 1981-06-02 1982-12-08 Nippon Steel Corp Preparation of sintered ore having iron ore fine powder highly compounded therein
JPS589936A (ja) * 1981-07-10 1983-01-20 Nippon Kokan Kk <Nkk> 塊成鉱製造法
JPS58120751A (ja) * 1982-01-14 1983-07-18 Kawasaki Steel Corp 焼結機による焼結鉱およびペレツトの製造方法

Also Published As

Publication number Publication date
KR860700268A (ko) 1986-08-01
BR8506975A (pt) 1986-12-23
EP0199818B1 (de) 1990-03-14
WO1986002668A1 (en) 1986-05-09
DE3576534D1 (de) 1990-04-19
AU4230985A (en) 1986-05-15
KR900001095B1 (ko) 1990-02-26
US4722750A (en) 1988-02-02
CA1246343A (en) 1988-12-13
US4810290A (en) 1989-03-07
EP0199818A1 (de) 1986-11-05
AU572651B2 (en) 1988-05-12
JPH0465132B2 (de) 1992-10-19
JPS61106728A (ja) 1986-05-24
EP0199818A4 (de) 1987-03-16

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