IL83327A - Process for making a t-gate transistor - Google Patents

Process for making a t-gate transistor

Info

Publication number
IL83327A
IL83327A IL83327A IL8332787A IL83327A IL 83327 A IL83327 A IL 83327A IL 83327 A IL83327 A IL 83327A IL 8332787 A IL8332787 A IL 8332787A IL 83327 A IL83327 A IL 83327A
Authority
IL
Israel
Prior art keywords
making
gate transistor
transistor
gate
Prior art date
Application number
IL83327A
Other languages
English (en)
Other versions
IL83327A0 (en
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of IL83327A0 publication Critical patent/IL83327A0/xx
Publication of IL83327A publication Critical patent/IL83327A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0124—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors
    • H10D64/0125—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors characterised by the sectional shape, e.g. T or inverted T
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/202—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials for lift-off processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/951—Lift-off
IL83327A 1986-10-08 1987-07-26 Process for making a t-gate transistor IL83327A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/916,592 US4700462A (en) 1986-10-08 1986-10-08 Process for making a T-gated transistor

Publications (2)

Publication Number Publication Date
IL83327A0 IL83327A0 (en) 1987-12-31
IL83327A true IL83327A (en) 1991-08-16

Family

ID=25437522

Family Applications (1)

Application Number Title Priority Date Filing Date
IL83327A IL83327A (en) 1986-10-08 1987-07-26 Process for making a t-gate transistor

Country Status (7)

Country Link
US (1) US4700462A (de)
EP (1) EP0287656B1 (de)
JP (1) JPH01500946A (de)
KR (1) KR910007098B1 (de)
DE (1) DE3777812D1 (de)
IL (1) IL83327A (de)
WO (1) WO1988002927A2 (de)

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Publication number Priority date Publication date Assignee Title
JPS63155671A (ja) * 1986-12-18 1988-06-28 Nec Corp 半導体装置の製造方法
US4864162A (en) * 1988-05-10 1989-09-05 Grumman Aerospace Corporation Voltage variable FET resistor with chosen resistance-voltage relationship
US4875023A (en) * 1988-05-10 1989-10-17 Grumman Aerospace Corporation Variable attenuator having voltage variable FET resistor with chosen resistance-voltage relationship
US5053348A (en) * 1989-12-01 1991-10-01 Hughes Aircraft Company Fabrication of self-aligned, t-gate hemt
KR920005128B1 (ko) * 1989-12-27 1992-06-26 재단법인 한국전자통신연구소 접합형 전계효과 트랜지스터 제조방법
US5034351A (en) * 1990-10-01 1991-07-23 Motorola, Inc. Process for forming a feature on a substrate without recessing the surface of the substrate
US5116772A (en) * 1990-12-26 1992-05-26 Electronics And Telecommunications Research Institute Method for manufacturing a junction field effect transisor
US5155053A (en) * 1991-05-28 1992-10-13 Hughes Aircraft Company Method of forming t-gate structure on microelectronic device substrate
US5266516A (en) * 1992-01-02 1993-11-30 Chartered Semiconductor Manufacturing Pte Ltd Method for making electrical contact through an opening of one micron or less for CMOS technology
JPH0661266A (ja) * 1992-08-06 1994-03-04 Mitsubishi Electric Corp 半導体装置とその製造方法
JPH06140434A (ja) * 1992-10-26 1994-05-20 Mitsubishi Electric Corp 電界効果型トランジスタの製造方法
JP3119957B2 (ja) * 1992-11-30 2000-12-25 株式会社東芝 半導体装置の製造方法
US5489539A (en) * 1994-01-10 1996-02-06 Hughes Aircraft Company Method of making quantum well structure with self-aligned gate
US5486483A (en) * 1994-09-27 1996-01-23 Trw Inc. Method of forming closely spaced metal electrodes in a semiconductor device
US5693548A (en) * 1994-12-19 1997-12-02 Electronics And Telecommunications Research Institute Method for making T-gate of field effect transistor
JP3336487B2 (ja) * 1995-01-30 2002-10-21 本田技研工業株式会社 高周波トランジスタのゲート電極形成方法
KR0179116B1 (ko) * 1995-12-30 1999-03-20 구자홍 자가정렬형 티형 게이트 제조방법
JPH09275209A (ja) 1996-04-04 1997-10-21 Honda Motor Co Ltd 高電子移動度トランジスタ及びその製造方法
US5940697A (en) * 1997-09-30 1999-08-17 Samsung Electronics Co., Ltd. T-gate MESFET process using dielectric film lift-off technique
US6159781A (en) * 1998-10-01 2000-12-12 Chartered Semiconductor Manufacturing, Ltd. Way to fabricate the self-aligned T-shape gate to reduce gate resistivity
US6077733A (en) * 1999-09-03 2000-06-20 Taiwan Semiconductor Manufacturing Company Method of manufacturing self-aligned T-shaped gate through dual damascene
KR100348902B1 (ko) 1999-11-30 2002-08-14 한국전자통신연구원 에이치이엠티의 감마게이트 제조방법
US7008832B1 (en) 2000-07-20 2006-03-07 Advanced Micro Devices, Inc. Damascene process for a T-shaped gate electrode
US6403456B1 (en) * 2000-08-22 2002-06-11 Advanced Micro Devices, Inc. T or T/Y gate formation using trim etch processing
US6784081B1 (en) * 2003-08-06 2004-08-31 Suntek Compound Semiconductor Co., Ltd. Gate structure forming method of field effect transistor
US20060009038A1 (en) * 2004-07-12 2006-01-12 International Business Machines Corporation Processing for overcoming extreme topography
US7592211B2 (en) * 2006-01-17 2009-09-22 Cree, Inc. Methods of fabricating transistors including supported gate electrodes
US7709269B2 (en) * 2006-01-17 2010-05-04 Cree, Inc. Methods of fabricating transistors including dielectrically-supported gate electrodes
US8420978B2 (en) * 2007-01-18 2013-04-16 The Board Of Trustees Of The University Of Illinois High throughput, low cost dual-mode patterning method for large area substrates
DE102007003541A1 (de) * 2007-01-24 2008-07-31 Robert Bosch Gmbh Elektronisches Bauteil
US8003300B2 (en) * 2007-04-12 2011-08-23 The Board Of Trustees Of The University Of Illinois Methods for fabricating complex micro and nanoscale structures and electronic devices and components made by the same
US8652763B2 (en) * 2007-07-16 2014-02-18 The Board Of Trustees Of The University Of Illinois Method for fabricating dual damascene profiles using sub pixel-voting lithography and devices made by same
US8546067B2 (en) * 2008-03-21 2013-10-01 The Board Of Trustees Of The University Of Illinois Material assisted laser ablation
US8187795B2 (en) * 2008-12-09 2012-05-29 The Board Of Trustees Of The University Of Illinois Patterning methods for stretchable structures
US9099433B2 (en) * 2012-04-23 2015-08-04 Freescale Semiconductor, Inc. High speed gallium nitride transistor devices
US10340352B2 (en) * 2017-03-14 2019-07-02 Globalfoundries Inc. Field-effect transistors with a T-shaped gate electrode
CN110429027B (zh) * 2019-06-27 2021-10-29 福建省福联集成电路有限公司 一种提高低线宽栅极器件生产效率的方法及器件

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4283483A (en) * 1979-07-19 1981-08-11 Hughes Aircraft Company Process for forming semiconductor devices using electron-sensitive resist patterns with controlled line profiles
JPS5811512B2 (ja) * 1979-07-25 1983-03-03 超エル・エス・アイ技術研究組合 パタ−ン形成方法
US4442590A (en) * 1980-11-17 1984-04-17 Ball Corporation Monolithic microwave integrated circuit with integral array antenna
JPS57155731A (en) * 1981-03-20 1982-09-25 Fujitsu Ltd Formation of pattern
US4551905A (en) * 1982-12-09 1985-11-12 Cornell Research Foundation, Inc. Fabrication of metal lines for semiconductor devices
US4536942A (en) * 1982-12-09 1985-08-27 Cornell Research Foundation, Inc. Fabrication of T-shaped metal lines for semiconductor devices
JPS59119765A (ja) * 1982-12-27 1984-07-11 Fujitsu Ltd 電界効果型半導体装置の製造方法
US4459321A (en) * 1982-12-30 1984-07-10 International Business Machines Corporation Process for applying closely overlapped mutually protective barrier films
US4497684A (en) * 1983-02-22 1985-02-05 Amdahl Corporation Lift-off process for depositing metal on a substrate
JPS6032364A (ja) * 1983-08-01 1985-02-19 Toshiba Corp 半導体装置の製造方法
US4584763A (en) * 1983-12-15 1986-04-29 International Business Machines Corporation One mask technique for substrate contacting in integrated circuits involving deep dielectric isolation
US4618510A (en) * 1984-09-05 1986-10-21 Hewlett Packard Company Pre-passivated sub-micrometer gate electrodes for MESFET devices
US4592132A (en) * 1984-12-07 1986-06-03 Hughes Aircraft Company Process for fabricating multi-level-metal integrated circuits at high yields
JPS61170027A (ja) * 1985-01-24 1986-07-31 Nec Corp ３−ｖ族半導体装置の製造方法
US4599790A (en) * 1985-01-30 1986-07-15 Texas Instruments Incorporated Process for forming a T-shaped gate structure
JPS61190985A (ja) * 1985-02-20 1986-08-25 Fujitsu Ltd 半導体装置
FR2579827B1 (fr) * 1985-04-01 1987-05-15 Thomson Csf Procede de realisation d'un transistor a effet de champ a metallisation de grille autoalignee

Also Published As

Publication number Publication date
KR880701964A (ko) 1988-11-07
KR910007098B1 (ko) 1991-09-18
WO1988002927A3 (en) 1988-05-05
DE3777812D1 (de) 1992-04-30
EP0287656B1 (de) 1992-03-25
IL83327A0 (en) 1987-12-31
US4700462A (en) 1987-10-20
JPH01500946A (ja) 1989-03-30
EP0287656A1 (de) 1988-10-26
WO1988002927A2 (en) 1988-04-21

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