IL75929A - Pbs-pbse ir detector arrays and fabrication method - Google Patents
Pbs-pbse ir detector arrays and fabrication methodInfo
- Publication number
- IL75929A IL75929A IL75929A IL7592985A IL75929A IL 75929 A IL75929 A IL 75929A IL 75929 A IL75929 A IL 75929A IL 7592985 A IL7592985 A IL 7592985A IL 75929 A IL75929 A IL 75929A
- Authority
- IL
- Israel
- Prior art keywords
- pbse
- pbs
- fabrication method
- detector arrays
- arrays
- Prior art date
Links
- 238000003491 array Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14825—Linear CCD imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14875—Infrared CCD or CID imagers
- H01L27/14881—Infrared CCD or CID imagers of the hybrid type
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IL8926185A IL89261A (en) | 1984-10-26 | 1985-07-28 | Pbs-pbse ir detector arrays and fabrication method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/665,271 US4602158A (en) | 1984-10-26 | 1984-10-26 | PbS-PbSe IR detector arrays |
Publications (2)
Publication Number | Publication Date |
---|---|
IL75929A0 IL75929A0 (en) | 1985-12-31 |
IL75929A true IL75929A (en) | 1989-09-10 |
Family
ID=24669426
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL75929A IL75929A (en) | 1984-10-26 | 1985-07-28 | Pbs-pbse ir detector arrays and fabrication method |
Country Status (7)
Country | Link |
---|---|
US (1) | US4602158A (xx) |
JP (1) | JPS61102772A (xx) |
CA (1) | CA1223653A (xx) |
DE (1) | DE3537570A1 (xx) |
FR (1) | FR2572610B1 (xx) |
GB (2) | GB2166288B (xx) |
IL (1) | IL75929A (xx) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4689246A (en) * | 1984-10-26 | 1987-08-25 | Itek Corporation | Method of fabricating a PbS-PbSe IR detector array |
US4682032A (en) * | 1986-01-17 | 1987-07-21 | Itek Corporation | Joule-Thomson cryostat having a chemically-deposited infrared detector and method of manufacture |
GB2219132A (en) * | 1988-05-27 | 1989-11-29 | Philips Electronic Associated | Manufacture of electronic devices comprising cadmium mercury telluride |
JPH02221823A (ja) * | 1989-02-22 | 1990-09-04 | Hitachi Ltd | 光度計 |
CN1329728C (zh) * | 2001-05-21 | 2007-08-01 | 派拉斯科技术公司 | 一种用于在自动化过程控制工件检查应用中提供热红外成像快照动作的装置及方法 |
US20040021214A1 (en) * | 2002-04-16 | 2004-02-05 | Avner Badehi | Electro-optic integrated circuits with connectors and methods for the production thereof |
AU2003226601A1 (en) * | 2002-04-16 | 2003-10-27 | Xloom Photonics Ltd. | Electro-optical circuitry having integrated connector and methods for the production thereof |
EP1676160A4 (en) * | 2003-10-15 | 2008-04-09 | Xloom Photonics Ltd | ELECTRO-OPTICAL CIRCUITRY HAVING AN INTEGRATED CONNECTOR AND METHODS OF PRODUCING THE SAME |
US7611920B1 (en) * | 2005-11-17 | 2009-11-03 | Bae Systems Information And Electronic Systems Integration Inc. | Photonic coupling scheme for photodetectors |
US20090093137A1 (en) * | 2007-10-08 | 2009-04-09 | Xloom Communications, (Israel) Ltd. | Optical communications module |
AU2014280332B2 (en) | 2013-06-13 | 2017-09-07 | Basf Se | Detector for optically detecting at least one object |
EP3167304A4 (en) | 2014-07-08 | 2018-02-21 | Basf Se | Detector for determining a position of at least one object |
US11125880B2 (en) | 2014-12-09 | 2021-09-21 | Basf Se | Optical detector |
JP6841769B2 (ja) | 2015-01-30 | 2021-03-10 | トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング | 少なくとも1個の物体を光学的に検出する検出器 |
WO2017012986A1 (en) | 2015-07-17 | 2017-01-26 | Trinamix Gmbh | Detector for optically detecting at least one object |
KR102492134B1 (ko) | 2016-07-29 | 2023-01-27 | 트리나미엑스 게엠베하 | 광학 센서 및 광학적 검출용 검출기 |
US10890491B2 (en) | 2016-10-25 | 2021-01-12 | Trinamix Gmbh | Optical detector for an optical detection |
KR102431355B1 (ko) | 2016-10-25 | 2022-08-10 | 트리나미엑스 게엠베하 | 적어도 하나의 대상체의 광학적 검출을 위한 검출기 |
JP6979068B2 (ja) | 2016-11-17 | 2021-12-08 | トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング | 少なくとも1つの物体を光学的に検出するための検出器 |
US11860292B2 (en) | 2016-11-17 | 2024-01-02 | Trinamix Gmbh | Detector and methods for authenticating at least one object |
EP3612805A1 (en) | 2017-04-20 | 2020-02-26 | trinamiX GmbH | Optical detector |
KR102568462B1 (ko) | 2017-06-26 | 2023-08-21 | 트리나미엑스 게엠베하 | 적어도 하나의 대상체의 위치를 결정하는 검출기 |
CN112920386A (zh) * | 2021-01-29 | 2021-06-08 | 临朐齐力催化剂有限公司 | 一种可降解制品用pbs的生产制备方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB337691A (en) * | 1929-02-13 | 1930-11-06 | Telefunken Gmbh | Improvements in or relating to graphite electrodes suitable for use in selenium cells |
US4101452A (en) * | 1952-09-27 | 1978-07-18 | Electronics Corporation Of America | Lead sulfide activation process |
GB823539A (en) * | 1955-01-20 | 1959-11-11 | Stig Ake Thulin | Improvements in or relating to a photo-electric device for measuring and regulating purposes |
NL89173C (xx) * | 1955-05-03 | |||
NL106419C (xx) * | 1956-09-29 | |||
US2997408A (en) * | 1958-05-21 | 1961-08-22 | Itt | Process for producing photoconductive cadmium sulfide |
US3178312A (en) * | 1959-01-02 | 1965-04-13 | Santa Barbara Res Ct | Solutions and methods for depositing lead selenide |
GB1115319A (en) * | 1966-04-04 | 1968-05-29 | Baldwin Co D H | Photocell array structure |
BE759559A (fr) * | 1969-12-03 | 1971-04-30 | Cerberus Ag | Dispositif pour detecter un incendie ou des flammes |
US3832298A (en) * | 1972-06-05 | 1974-08-27 | Eastman Kodak Co | Method for producing a photoconductive element |
US3963925A (en) * | 1975-02-26 | 1976-06-15 | Texas Instruments Incorporated | Photoconductive detector and method of fabrication |
US3994012A (en) * | 1975-05-07 | 1976-11-23 | The Regents Of The University Of Minnesota | Photovoltaic semi-conductor devices |
GB2002511B (en) * | 1977-08-05 | 1982-02-10 | Emi Ltd | Detectors of penetrating radiation |
US4137625A (en) * | 1977-09-01 | 1979-02-06 | Honeywell Inc. | Thin film interconnect for multicolor IR/CCD |
GB2027985B (en) * | 1978-07-31 | 1983-01-19 | Philips Electronic Associated | Infra-red detectors |
DE3276287D1 (en) * | 1981-04-20 | 1987-06-11 | Hughes Aircraft Co | High speed photoconductive detector |
GB2100511B (en) * | 1981-05-15 | 1985-02-27 | Rockwell International Corp | Detector for responding to light at a predetermined wavelength and method of making the detector |
US4442446A (en) * | 1982-03-17 | 1984-04-10 | The United States Of America As Represented By The Secretary Of The Navy | Sensitized epitaxial infrared detector |
FR2568060B1 (fr) * | 1984-07-19 | 1989-01-13 | Canon Kk | Element detecteur d'image de grande dimension, photodetecteurs utilises dans cet element detecteur et procede de fabrication des photodetecteurs |
-
1984
- 1984-10-26 US US06/665,271 patent/US4602158A/en not_active Expired - Lifetime
-
1985
- 1985-07-28 IL IL75929A patent/IL75929A/xx not_active IP Right Cessation
- 1985-07-30 CA CA000487743A patent/CA1223653A/en not_active Expired
- 1985-08-16 GB GB8520572A patent/GB2166288B/en not_active Expired
- 1985-09-09 JP JP60197872A patent/JPS61102772A/ja active Pending
- 1985-10-22 DE DE19853537570 patent/DE3537570A1/de not_active Withdrawn
- 1985-10-25 FR FR858515876A patent/FR2572610B1/fr not_active Expired - Fee Related
-
1988
- 1988-05-16 GB GB8811572A patent/GB2204447B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2572610B1 (fr) | 1990-12-07 |
FR2572610A1 (fr) | 1986-05-02 |
CA1223653A (en) | 1987-06-30 |
GB8520572D0 (en) | 1985-09-25 |
GB2166288B (en) | 1989-06-01 |
GB8811572D0 (en) | 1988-06-22 |
GB2204447B (en) | 1989-07-26 |
DE3537570A1 (de) | 1986-04-30 |
GB2166288A (en) | 1986-04-30 |
GB2204447A (en) | 1988-11-09 |
JPS61102772A (ja) | 1986-05-21 |
US4602158A (en) | 1986-07-22 |
IL75929A0 (en) | 1985-12-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RH | Patent void |