GB337691A - Improvements in or relating to graphite electrodes suitable for use in selenium cells - Google Patents

Improvements in or relating to graphite electrodes suitable for use in selenium cells

Info

Publication number
GB337691A
GB337691A GB2267/30A GB226730A GB337691A GB 337691 A GB337691 A GB 337691A GB 2267/30 A GB2267/30 A GB 2267/30A GB 226730 A GB226730 A GB 226730A GB 337691 A GB337691 A GB 337691A
Authority
GB
United Kingdom
Prior art keywords
selenium
relating
graphite electrodes
electrodes suitable
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2267/30A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken AG
Original Assignee
Telefunken AG
Telefunken Gesellschaft fuer Drahtlose Telegraphie mbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken AG, Telefunken Gesellschaft fuer Drahtlose Telegraphie mbH filed Critical Telefunken AG
Publication of GB337691A publication Critical patent/GB337691A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors

Abstract

337,691. Telefunken Ges. f³r Drahtlose Telegraphic. Feb. 13, 1929, [Convention date]. Light-sensitive cells. -A light-sensitive cell is formed on a polished sheet of glass, with electrodes a, a constituted by graphite deposited from a colloidal suspension on the shaded portion which has been previously etched. The suspending medium is driven off by heating and the interstices are coated with selenium, or selenium in combination with tellurium.
GB2267/30A 1929-02-13 1930-01-22 Improvements in or relating to graphite electrodes suitable for use in selenium cells Expired GB337691A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE337691X 1929-02-13

Publications (1)

Publication Number Publication Date
GB337691A true GB337691A (en) 1930-11-06

Family

ID=6221744

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2267/30A Expired GB337691A (en) 1929-02-13 1930-01-22 Improvements in or relating to graphite electrodes suitable for use in selenium cells

Country Status (1)

Country Link
GB (1) GB337691A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE974421C (en) * 1943-07-05 1960-12-22 Aeg Semiconductor layer dry rectifier and process for its manufacture
GB2204447A (en) * 1984-10-26 1988-11-09 Itek Corp Light detector array

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE974421C (en) * 1943-07-05 1960-12-22 Aeg Semiconductor layer dry rectifier and process for its manufacture
GB2204447A (en) * 1984-10-26 1988-11-09 Itek Corp Light detector array
GB2166288B (en) * 1984-10-26 1989-06-01 Itek Corp Pbs-pbse photosensitive detectors and fabrication thereof.
GB2204447B (en) * 1984-10-26 1989-07-26 Itek Corp Photoelectric imaging devices

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