IL72336A - High density mosfet with field oxide aligned channel stops and method of fabricating the same - Google Patents
High density mosfet with field oxide aligned channel stops and method of fabricating the sameInfo
- Publication number
- IL72336A IL72336A IL72336A IL7233684A IL72336A IL 72336 A IL72336 A IL 72336A IL 72336 A IL72336 A IL 72336A IL 7233684 A IL7233684 A IL 7233684A IL 72336 A IL72336 A IL 72336A
- Authority
- IL
- Israel
- Prior art keywords
- fabricating
- same
- high density
- field oxide
- channel stops
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8236—Combination of enhancement and depletion transistors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Element Separation (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53792083A | 1983-09-30 | 1983-09-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
IL72336A0 IL72336A0 (en) | 1984-11-30 |
IL72336A true IL72336A (en) | 1988-04-29 |
Family
ID=24144669
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL72336A IL72336A (en) | 1983-09-30 | 1984-07-08 | High density mosfet with field oxide aligned channel stops and method of fabricating the same |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0157780B1 (de) |
JP (1) | JPH0616525B2 (de) |
KR (1) | KR920009744B1 (de) |
DE (1) | DE3376710D1 (de) |
IL (1) | IL72336A (de) |
WO (1) | WO1985001613A1 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5208168A (en) * | 1990-11-26 | 1993-05-04 | Motorola, Inc. | Semiconductor device having punch-through protected buried contacts and method for making the same |
KR100197656B1 (ko) * | 1995-12-29 | 1999-07-01 | 김영환 | 반도체 에스.오.아이.소자의 제조방법 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5679446A (en) * | 1979-12-04 | 1981-06-30 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Production of semiconductor device |
JPS56111241A (en) * | 1980-02-01 | 1981-09-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Preparation of semiconductor device |
FR2506076A1 (fr) * | 1981-05-12 | 1982-11-19 | Efcis | Procede de fabrication de circuits integres de type mos |
JPS58121643A (ja) * | 1982-01-13 | 1983-07-20 | Toshiba Corp | 半導体装置の製造方法 |
US4418094A (en) * | 1982-03-02 | 1983-11-29 | Texas Instruments Incorporated | Vertical-etch direct moat isolation process |
EP0111097B1 (de) * | 1982-12-08 | 1987-05-27 | International Business Machines Corporation | Verfahren zum Herstellen von Halbleiteranordnungen mit einem dicken Felddielektrikum und einem selbstausrichtenden Kanalbegrenzer |
JPS59161069A (ja) * | 1983-03-04 | 1984-09-11 | Oki Electric Ind Co Ltd | Mos型半導体装置の製造方法 |
-
1983
- 1983-12-12 DE DE8484900564T patent/DE3376710D1/de not_active Expired
- 1983-12-12 WO PCT/US1983/001959 patent/WO1985001613A1/en active IP Right Grant
- 1983-12-12 JP JP59500651A patent/JPH0616525B2/ja not_active Expired - Lifetime
- 1983-12-12 EP EP84900564A patent/EP0157780B1/de not_active Expired
-
1984
- 1984-07-08 IL IL72336A patent/IL72336A/xx not_active IP Right Cessation
- 1984-09-29 KR KR1019840006053A patent/KR920009744B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR920009744B1 (ko) | 1992-10-22 |
KR850002675A (ko) | 1985-05-15 |
JPH0616525B2 (ja) | 1994-03-02 |
WO1985001613A1 (en) | 1985-04-11 |
JPS61500046A (ja) | 1986-01-09 |
IL72336A0 (en) | 1984-11-30 |
EP0157780A1 (de) | 1985-10-16 |
EP0157780B1 (de) | 1988-05-18 |
DE3376710D1 (en) | 1988-06-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RH | Patent void |