IL72336A - High density mosfet with field oxide aligned channel stops and method of fabricating the same - Google Patents

High density mosfet with field oxide aligned channel stops and method of fabricating the same

Info

Publication number
IL72336A
IL72336A IL72336A IL7233684A IL72336A IL 72336 A IL72336 A IL 72336A IL 72336 A IL72336 A IL 72336A IL 7233684 A IL7233684 A IL 7233684A IL 72336 A IL72336 A IL 72336A
Authority
IL
Israel
Prior art keywords
fabricating
same
high density
field oxide
channel stops
Prior art date
Application number
IL72336A
Other languages
English (en)
Other versions
IL72336A0 (en
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of IL72336A0 publication Critical patent/IL72336A0/xx
Publication of IL72336A publication Critical patent/IL72336A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8236—Combination of enhancement and depletion transistors
IL72336A 1983-09-30 1984-07-08 High density mosfet with field oxide aligned channel stops and method of fabricating the same IL72336A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53792083A 1983-09-30 1983-09-30

Publications (2)

Publication Number Publication Date
IL72336A0 IL72336A0 (en) 1984-11-30
IL72336A true IL72336A (en) 1988-04-29

Family

ID=24144669

Family Applications (1)

Application Number Title Priority Date Filing Date
IL72336A IL72336A (en) 1983-09-30 1984-07-08 High density mosfet with field oxide aligned channel stops and method of fabricating the same

Country Status (6)

Country Link
EP (1) EP0157780B1 (xx)
JP (1) JPH0616525B2 (xx)
KR (1) KR920009744B1 (xx)
DE (1) DE3376710D1 (xx)
IL (1) IL72336A (xx)
WO (1) WO1985001613A1 (xx)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5208168A (en) * 1990-11-26 1993-05-04 Motorola, Inc. Semiconductor device having punch-through protected buried contacts and method for making the same
KR100197656B1 (ko) * 1995-12-29 1999-07-01 김영환 반도체 에스.오.아이.소자의 제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5679446A (en) * 1979-12-04 1981-06-30 Chiyou Lsi Gijutsu Kenkyu Kumiai Production of semiconductor device
JPS56111241A (en) * 1980-02-01 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Preparation of semiconductor device
FR2506076A1 (fr) * 1981-05-12 1982-11-19 Efcis Procede de fabrication de circuits integres de type mos
JPS58121643A (ja) * 1982-01-13 1983-07-20 Toshiba Corp 半導体装置の製造方法
US4418094A (en) * 1982-03-02 1983-11-29 Texas Instruments Incorporated Vertical-etch direct moat isolation process
DE3371837D1 (en) * 1982-12-08 1987-07-02 Ibm Method for making semiconductor devices having a thick field dielectric and a self-aligned channel stopper
JPS59161069A (ja) * 1983-03-04 1984-09-11 Oki Electric Ind Co Ltd Ｍｏｓ型半導体装置の製造方法

Also Published As

Publication number Publication date
DE3376710D1 (en) 1988-06-23
EP0157780B1 (en) 1988-05-18
WO1985001613A1 (en) 1985-04-11
JPH0616525B2 (ja) 1994-03-02
KR920009744B1 (ko) 1992-10-22
EP0157780A1 (en) 1985-10-16
IL72336A0 (en) 1984-11-30
JPS61500046A (ja) 1986-01-09
KR850002675A (ko) 1985-05-15

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Legal Events

Date Code Title Description
RH Patent void