IL71376A - Inverted positive vertical flow chemical vapor deposition reactor chamber - Google Patents

Inverted positive vertical flow chemical vapor deposition reactor chamber

Info

Publication number
IL71376A
IL71376A IL71376A IL7137684A IL71376A IL 71376 A IL71376 A IL 71376A IL 71376 A IL71376 A IL 71376A IL 7137684 A IL7137684 A IL 7137684A IL 71376 A IL71376 A IL 71376A
Authority
IL
Israel
Prior art keywords
vapor deposition
chemical vapor
reactor chamber
vertical flow
deposition reactor
Prior art date
Application number
IL71376A
Other languages
English (en)
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of IL71376A publication Critical patent/IL71376A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45582—Expansion of gas before it reaches the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
IL71376A 1983-04-29 1984-03-27 Inverted positive vertical flow chemical vapor deposition reactor chamber IL71376A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US48991983A 1983-04-29 1983-04-29

Publications (1)

Publication Number Publication Date
IL71376A true IL71376A (en) 1987-12-20

Family

ID=23945829

Family Applications (1)

Application Number Title Priority Date Filing Date
IL71376A IL71376A (en) 1983-04-29 1984-03-27 Inverted positive vertical flow chemical vapor deposition reactor chamber

Country Status (9)

Country Link
EP (1) EP0142495B1 (de)
JP (1) JPS60501234A (de)
KR (1) KR900001658B1 (de)
CA (1) CA1209330A (de)
DE (1) DE3367627D1 (de)
IL (1) IL71376A (de)
IT (1) IT1214395B (de)
NO (1) NO844985L (de)
WO (1) WO1984004334A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3539981C1 (de) * 1985-11-11 1987-06-11 Telog Systems Gmbh Verfahren und Vorrichtung zur Behandlung von Halbleitermaterialien
JP2733535B2 (ja) * 1988-06-24 1998-03-30 株式会社リコー 半導体薄膜気相成長装置
US5510146A (en) * 1991-07-16 1996-04-23 Seiko Epson Corporation CVD apparatus, method of forming semiconductor film, and method of fabricating thin-film semiconductor device
US6066204A (en) * 1997-01-08 2000-05-23 Bandwidth Semiconductor, Llc High pressure MOCVD reactor system
US7344584B2 (en) * 2004-09-03 2008-03-18 Inco Limited Process for producing metal powders

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1398758A (fr) * 1963-11-13 1965-05-14 Texas Instruments Inc Procédé et appareil de croissance épitaxiale pour la fabrication de semi-conducteurs
FR1462335A (fr) * 1965-10-16 1966-04-15 Philips Nv Procédé d'application de couches d'oxyde d'étain sur des dispositifs supports
US3607378A (en) * 1969-10-27 1971-09-21 Texas Instruments Inc Technique for depositing silicon dioxide from silane and oxygen
DE2846160A1 (de) * 1978-10-24 1980-05-08 Kernforschungsanlage Juelich Wirbelschichtreaktor mit offenem reaktionsgaszutritt und verfahren zur laminar-durchflussteigerung
JPS5673694A (en) * 1979-11-14 1981-06-18 Fujitsu Ltd Vertical type vapor phase growing method and apparatus

Also Published As

Publication number Publication date
IT8448099A0 (it) 1984-04-27
EP0142495B1 (de) 1986-11-12
NO844985L (no) 1984-12-12
WO1984004334A1 (en) 1984-11-08
EP0142495A1 (de) 1985-05-29
IT1214395B (it) 1990-01-18
KR900001658B1 (ko) 1990-03-17
JPS60501234A (ja) 1985-08-01
DE3367627D1 (en) 1987-01-02
KR840009176A (ko) 1984-12-24
CA1209330A (en) 1986-08-12
JPH0231490B2 (de) 1990-07-13

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Legal Events

Date Code Title Description
RH Patent void