IL69736A - Infrared detectors - Google Patents

Infrared detectors

Info

Publication number
IL69736A
IL69736A IL69736A IL6973683A IL69736A IL 69736 A IL69736 A IL 69736A IL 69736 A IL69736 A IL 69736A IL 6973683 A IL6973683 A IL 6973683A IL 69736 A IL69736 A IL 69736A
Authority
IL
Israel
Prior art keywords
infrared detectors
detectors
infrared
Prior art date
Application number
IL69736A
Other languages
English (en)
Original Assignee
Secr Defence Brit
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Secr Defence Brit filed Critical Secr Defence Brit
Publication of IL69736A publication Critical patent/IL69736A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Radiation Pyrometers (AREA)
IL69736A 1982-09-23 1983-09-15 Infrared detectors IL69736A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8227180 1982-09-23

Publications (1)

Publication Number Publication Date
IL69736A true IL69736A (en) 1987-12-20

Family

ID=10533122

Family Applications (1)

Application Number Title Priority Date Filing Date
IL69736A IL69736A (en) 1982-09-23 1983-09-15 Infrared detectors

Country Status (5)

Country Link
US (1) US4679063A (xx)
EP (1) EP0106514B1 (xx)
JP (1) JPS5980978A (xx)
DE (1) DE3379441D1 (xx)
IL (1) IL69736A (xx)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985004987A1 (en) * 1984-04-25 1985-11-07 Josef Kemmer Large-surface low-capacity semi-conductor radiation detector
GB8417303D0 (en) * 1984-07-06 1984-08-08 Secr Defence Infra-red detector
JPH0712100B2 (ja) * 1985-03-25 1995-02-08 株式会社日立製作所 半導体発光素子
US4874572A (en) * 1987-05-06 1989-10-17 Ophir Corporation Method of and apparatus for measuring vapor density
JPH0278278A (ja) * 1988-09-13 1990-03-19 Nec Corp 赤外線センサ
GB8828348D0 (en) * 1988-12-05 1989-01-05 Secr Defence Photodetector
US5185647A (en) * 1988-12-12 1993-02-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Long wavelength infrared detector
US5001532A (en) * 1989-09-06 1991-03-19 Rockwell International Corporation Impurity band conduction detector having photoluminescent layer
FR2678774B1 (fr) * 1991-07-05 1998-07-10 Thomson Csf Detecteur d'ondes electromagnetiques.
IL99592A (en) * 1991-09-27 1995-05-26 Bendix Avelex Inc Thermal imaging apparatus
US5412242A (en) * 1993-04-14 1995-05-02 Yeda Research And Development Co., Ltd. Semiconductor device with p-n junction based on dopant profile in equilibrium with internal electric field created by this junction
US6043548A (en) * 1993-04-14 2000-03-28 Yeda Research And Development Co., Ltd. Semiconductor device with stabilized junction
US5621238A (en) * 1994-02-25 1997-04-15 The United States Of America As Represented By The Secretary Of The Air Force Narrow band semiconductor detector
US5438199A (en) * 1994-09-06 1995-08-01 Alliedsignal Inc. Thermal imaging apparatus with bias modulation
USH1717H (en) * 1995-11-16 1998-04-07 The United States Of America As Represented By The Secretary Of The Navy Bistable photoconductive switches particularly suited for frequency-agile, radio-frequency sources
US5804815A (en) * 1996-07-05 1998-09-08 Sandia Corporation GaAs photoconductive semiconductor switch
FR2773215B1 (fr) * 1997-12-31 2000-01-28 Commissariat Energie Atomique Detecteur thermique bolometrique
US6906793B2 (en) * 2000-12-11 2005-06-14 Canesta, Inc. Methods and devices for charge management for three-dimensional sensing
EP1356664A4 (en) * 2000-12-11 2009-07-22 Canesta Inc CMOS-COMPATIBLE THREE-DIMENSIONAL IMAGE SENSING USING MODULATION OF QUANTUM OUTPUT
US6674064B1 (en) 2001-07-18 2004-01-06 University Of Central Florida Method and system for performance improvement of photodetectors and solar cells
IL156744A (en) * 2003-07-02 2011-02-28 Semi Conductor Devices An Elbit Systems Rafael Partnership Depletion-less photodiode with suppressed dark current
US7129489B2 (en) * 2004-12-03 2006-10-31 Raytheon Company Method and apparatus providing single bump, multi-color pixel architecture
US7687871B2 (en) * 2006-03-19 2010-03-30 Shimon Maimon Reduced dark current photodetector
USRE48693E1 (en) 2006-03-19 2021-08-17 Shimon Maimon Application of reduced dark current photodetector with a thermoelectric cooler
US11245048B2 (en) 2006-03-19 2022-02-08 Shimon Maimon Reduced dark current photodetector with charge compensated barrier layer
US9766130B2 (en) 2006-03-19 2017-09-19 Shimon Maimon Application of reduced dark current photodetector with a thermoelectric cooler
USRE48642E1 (en) 2006-03-19 2021-07-13 Shimon Maimon Application of reduced dark current photodetector
US11264528B2 (en) 2006-03-19 2022-03-01 Shimon Maimon Reduced dark current photodetector with charge compensated barrier layer
IL174844A (en) * 2006-04-06 2011-02-28 Semi Conductor Devices An Elbit Systems Rafael Partnership Unipolar semiconductor photodetector with suppressed dark current and method for producing the same
CN101558348B (zh) * 2006-09-29 2013-03-06 佛罗里达大学研究基金公司 用于红外检测和显示的方法和设备
US8044435B2 (en) 2006-11-14 2011-10-25 Lockheed Martin Corporation Sub-pixel nBn detector
US7652252B1 (en) * 2007-10-08 2010-01-26 Hrl Laboratories, Llc Electronically tunable and reconfigurable hyperspectral photon detector
US8093559B1 (en) * 2008-12-02 2012-01-10 Hrl Laboratories, Llc Methods and apparatus for three-color infrared sensors
WO2011008979A2 (en) * 2009-07-17 2011-01-20 Lockheed Martin Corporation Strain-balanced extended-wavelength barrier detector
EP2491600A4 (en) * 2009-10-23 2015-04-22 Lockheed Corp PHOTO-DETECTOR WITH A BARRIER HAVING A TOP PLANE LAYER
US8154028B2 (en) * 2010-01-28 2012-04-10 Howard University Infrared external photoemissive detector
EP2577747B1 (en) 2010-05-24 2018-10-17 University of Florida Research Foundation, Inc. Method and apparatus for providing a charge blocking layer on an infrared up-conversion device
US8217480B2 (en) 2010-10-22 2012-07-10 California Institute Of Technology Barrier infrared detector
US8686471B2 (en) 2011-04-28 2014-04-01 Drs Rsta, Inc. Minority carrier based HgCdTe infrared detectors and arrays
MX2013015214A (es) 2011-06-30 2014-03-21 Nanoholdings Llc Metodo y aparato para detectar radiacion infrarroja con ganancia.
EP3385989A1 (en) 2011-09-13 2018-10-10 L3 Cincinnati Electronics Corporation Frontside-illuminated barrier infrared photodetector device and methods of fabricating the same
US8928029B2 (en) 2011-12-12 2015-01-06 California Institute Of Technology Single-band and dual-band infrared detectors
FR2985373B1 (fr) 2012-01-04 2014-01-24 Commissariat Energie Atomique Structure semiconductrice, dispositif comportant une telle structure et procede de fabrication d'une structure semiconductrice
JP2012134507A (ja) * 2012-01-11 2012-07-12 Maimon Shimon 暗電流を低減した光検出器
US9647155B1 (en) 2012-09-08 2017-05-09 Shimon Maimon Long wave photo-detection device for used in long wave infrared detection, materials, and method of fabrication
US9214581B2 (en) 2013-02-11 2015-12-15 California Institute Of Technology Barrier infrared detectors on lattice mismatch substrates
US9099371B1 (en) * 2013-04-12 2015-08-04 Lockheed Martin Corporation Barrier photodetector with no contact layer
US9158069B2 (en) * 2013-04-15 2015-10-13 Technion Research & Development Foundation Ltd. Charge-discharge electro-optical microring modulator
EP2802018A3 (en) 2013-05-07 2015-04-29 L-3 Communications Cincinnati Electronics Corporation Diode barrier infrared detector devices and superlattice barrier structures
JP2014239235A (ja) * 2014-07-10 2014-12-18 シモン・マイモンＳｈｉｍｏｎ ＭＡＩＭＯＮ 暗電流を低減した光検出器
US9799785B1 (en) 2015-03-13 2017-10-24 California Institute Of Technology Unipolar barrier dual-band infrared detectors
IL238368B (en) 2015-04-19 2019-08-29 Semi Conductor Devices An Elbit Systems Rafael Partnership light sensor
WO2017039774A2 (en) 2015-06-11 2017-03-09 University Of Florida Research Foundation, Incorporated Monodisperse, ir-absorbing nanoparticles and related methods and devices
US10872987B2 (en) 2015-12-10 2020-12-22 California Institute Of Technology Enhanced quantum efficiency barrier infrared detectors
US10128399B1 (en) 2016-08-16 2018-11-13 Hrl Laboratories, Llc Lateral-effect position-sensing detector
FR3109244B1 (fr) * 2020-04-09 2022-04-01 Commissariat Energie Atomique Dispositif de photo-détection à gradient latéral de concentration en cadmium dans la zone de charge d’espace

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3497698A (en) * 1968-01-12 1970-02-24 Massachusetts Inst Technology Metal insulator semiconductor radiation detector
GB1450627A (en) * 1974-01-29 1976-09-22 Standard Telephones Cables Ltd Opto-electronic devices
US4016586A (en) * 1974-03-27 1977-04-05 Innotech Corporation Photovoltaic heterojunction device employing a wide bandgap material as an active layer
GB1488258A (en) * 1974-11-27 1977-10-12 Secr Defence Thermal radiation imaging devices and systems
US4021833A (en) * 1976-05-17 1977-05-03 Honeywell Inc. Infrared photodiode
US4106951A (en) * 1976-08-12 1978-08-15 Uce, Inc. Photovoltaic semiconductor device using an organic material as an active layer
GB1597538A (en) * 1977-03-31 1981-09-09 Ford Motor Co Photovoltaic semiconductor device having increased detectivity and decreased capacitance
JPS6057714B2 (ja) * 1978-01-27 1985-12-16 株式会社日立製作所 光半導体装置
JPS5516479A (en) * 1978-07-21 1980-02-05 Sumitomo Electric Ind Ltd Heterojunction light receiving diode
US4346394A (en) * 1980-03-24 1982-08-24 Hughes Aircraft Company Gallium arsenide burrus FET structure for optical detection
GB2078440B (en) * 1980-03-31 1984-04-18 Nippon Telegraph & Telephone An optoelectronic switch
US4453173A (en) * 1982-04-27 1984-06-05 Rca Corporation Photocell utilizing a wide-bandgap semiconductor material
US4427841A (en) * 1982-06-29 1984-01-24 The United States Of America As Represented By The Secretary Of The Air Force Back barrier heteroface AlGaAs solar cell

Also Published As

Publication number Publication date
EP0106514A3 (en) 1986-02-12
US4679063A (en) 1987-07-07
JPS5980978A (ja) 1984-05-10
DE3379441D1 (en) 1989-04-20
EP0106514A2 (en) 1984-04-25
EP0106514B1 (en) 1989-03-15
JPH0576791B2 (xx) 1993-10-25

Similar Documents

Publication Publication Date Title
DE3379441D1 (en) Infrared detectors
GB2260218B (en) Infrared detectors
GB8305999D0 (en) Infra-red transducer-transmitter
DE3474349D1 (en) Infrared spectrometer
DE3369193D1 (en) Infra-red radiation detectors
GB8306396D0 (en) Infra-sonic detector
GB2144909B (en) Infra-red detector
GB8313971D0 (en) Detector
ZA833436B (en) Smoke detector
JPS57157136A (en) Detector
GB2081999B (en) Am detector
GB2113467B (en) Infra-red detector
GB2269653B (en) Infrared proximity detector
DE3161173D1 (en) Pyroelectric detector
GB2096321B (en) Combustible-gas detectors
GB8426435D0 (en) Pyroelectric detectors
GB2127619B (en) Infrared detectors
GB2100058B (en) Pyroelectric detector
GB2132757B (en) Infra-red detector assembly
JPS57163844A (en) Detector
DE3361523D1 (en) Infrared matrix detector
JPS56153269A (en) Detector
DE3380794D1 (en) Infrared detector
JPS57194683A (en) Detector
GB8328377D0 (en) Moisture detectors

Legal Events

Date Code Title Description
KB Patent renewed
KB Patent renewed
HP Change in proprietorship
EXP Patent expired