IL62937A - Method of growing a layer of the ternary alloy cadmium mercury telluride onto a substrate - Google Patents
Method of growing a layer of the ternary alloy cadmium mercury telluride onto a substrateInfo
- Publication number
- IL62937A IL62937A IL62937A IL6293781A IL62937A IL 62937 A IL62937 A IL 62937A IL 62937 A IL62937 A IL 62937A IL 6293781 A IL6293781 A IL 6293781A IL 62937 A IL62937 A IL 62937A
- Authority
- IL
- Israel
- Prior art keywords
- growing
- substrate
- layer
- ternary alloy
- cadmium mercury
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
- C01P2002/52—Solid solutions containing elements as dopants
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
- C01P2004/82—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases
- C01P2004/84—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases one phase coated with the other
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/906—Special atmosphere other than vacuum or inert
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8017334 | 1980-05-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
IL62937A0 IL62937A0 (en) | 1981-07-31 |
IL62937A true IL62937A (en) | 1985-01-31 |
Family
ID=10513667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL62937A IL62937A (en) | 1980-05-27 | 1981-05-22 | Method of growing a layer of the ternary alloy cadmium mercury telluride onto a substrate |
Country Status (6)
Country | Link |
---|---|
US (1) | US4650539A (ja) |
EP (1) | EP0040939B1 (ja) |
JP (1) | JPS5771190A (ja) |
CA (1) | CA1192475A (ja) |
DE (1) | DE3168017D1 (ja) |
IL (1) | IL62937A (ja) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58132882A (ja) * | 1982-01-30 | 1983-08-08 | グローリー工業株式会社 | 硬貨処理機の硬貨送り出し装置 |
US4720560A (en) * | 1984-10-25 | 1988-01-19 | Morton Thiokol, Inc. | Hybrid organometallic compounds, particularly for metal organic chemical vapor deposition |
JPH0817159B2 (ja) * | 1985-08-15 | 1996-02-21 | キヤノン株式会社 | 堆積膜の形成方法 |
US4743310A (en) * | 1985-08-26 | 1988-05-10 | Ford Aerospace & Communications Corporation | HGCDTE epitaxially grown on crystalline support |
US4837048A (en) * | 1985-10-24 | 1989-06-06 | Canon Kabushiki Kaisha | Method for forming a deposited film |
JPH0645885B2 (ja) * | 1985-12-16 | 1994-06-15 | キヤノン株式会社 | 堆積膜形成法 |
JPH0645888B2 (ja) * | 1985-12-17 | 1994-06-15 | キヤノン株式会社 | 堆積膜形成法 |
JPS62142778A (ja) * | 1985-12-18 | 1987-06-26 | Canon Inc | 堆積膜形成法 |
JPH0645890B2 (ja) * | 1985-12-18 | 1994-06-15 | キヤノン株式会社 | 堆積膜形成法 |
US5160543A (en) * | 1985-12-20 | 1992-11-03 | Canon Kabushiki Kaisha | Device for forming a deposited film |
JPH0651906B2 (ja) * | 1985-12-25 | 1994-07-06 | キヤノン株式会社 | 堆積膜形成法 |
JPH0746729B2 (ja) * | 1985-12-26 | 1995-05-17 | キヤノン株式会社 | 薄膜トランジスタの製造方法 |
US4920068A (en) * | 1986-04-02 | 1990-04-24 | American Cyanamid Company | Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials |
US4828938A (en) * | 1986-04-11 | 1989-05-09 | Hughes Aircraft Company | Method for depositing materials containing tellurium and product |
US4804638A (en) * | 1986-12-18 | 1989-02-14 | Raytheon Company | Metalorganic chemical vapor deposition growth of Group II-IV semiconductor materials having improved compositional uniformity |
CA1319587C (en) * | 1986-12-18 | 1993-06-29 | William Hoke | Metalorganic chemical vapor depositing growth of group ii-vi semiconductor materials having improved compositional uniformity |
US4834023A (en) * | 1986-12-19 | 1989-05-30 | Canon Kabushiki Kaisha | Apparatus for forming deposited film |
EP0285834B1 (en) * | 1987-04-07 | 1991-10-16 | American Cyanamid Company | Allyltellurides and their use in the mocvd growth of group ii-vi epitaxial films |
GB2203757B (en) * | 1987-04-16 | 1991-05-22 | Philips Electronic Associated | Electronic device manufacture |
EP0305144A3 (en) * | 1987-08-24 | 1989-03-08 | Canon Kabushiki Kaisha | Method of forming crystalline compound semiconductor film |
US4933207A (en) * | 1988-01-22 | 1990-06-12 | Hughes Aircraft Company | Laser and thermal assisted chemical vapor deposition of mercury containing compounds |
US4904337A (en) * | 1988-06-06 | 1990-02-27 | Raytheon Company | Photo-enhanced pyrolytic MOCVD growth of group II-VI materials |
US4901670A (en) * | 1988-08-22 | 1990-02-20 | Santa Barbara Research Center | Elemental mercury source for metal-organic chemical vapor deposition |
US4935383A (en) * | 1988-09-23 | 1990-06-19 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition |
JPH02150040A (ja) * | 1988-11-30 | 1990-06-08 | Fujitsu Ltd | 気相成長装置 |
US5064367A (en) * | 1989-06-28 | 1991-11-12 | Digital Equipment Corporation | Conical gas inlet for thermal processing furnace |
CA2016970A1 (en) * | 1990-05-16 | 1991-11-16 | Prasad N. Gadgil | Inverted diffusion stagnation point flow reactor for vapor deposition of thin films |
US5202283A (en) * | 1991-02-19 | 1993-04-13 | Rockwell International Corporation | Technique for doping MOCVD grown crystalline materials using free radical transport of the dopant species |
US5306660A (en) * | 1991-02-19 | 1994-04-26 | Rockwell International Corporation | Technique for doping mercury cadmium telluride MOCVD grown crystalline materials using free radical transport of elemental indium and apparatus therefor |
WO1992015112A1 (en) * | 1991-02-25 | 1992-09-03 | Symetrix Corporation | Methods and apparatus for material deposition |
US5324386A (en) * | 1991-03-19 | 1994-06-28 | Fujitsu Limited | Method of growing group II-IV mixed compound semiconductor and an apparatus used therefor |
US5534069A (en) * | 1992-07-23 | 1996-07-09 | Canon Kabushiki Kaisha | Method of treating active material |
JP2707041B2 (ja) | 1993-05-25 | 1998-01-28 | スタンレー電気株式会社 | El用蛍光体の製造方法 |
JP3271225B2 (ja) * | 1994-05-31 | 2002-04-02 | ソニー株式会社 | Ii−vi族化合物半導体の成長方法 |
US5531183A (en) | 1994-07-13 | 1996-07-02 | Applied Materials, Inc. | Vaporization sequence for multiple liquid precursors used in semiconductor thin film applications |
US5998235A (en) * | 1997-06-26 | 1999-12-07 | Lockheed Martin Corporation | Method of fabrication for mercury-based quaternary alloys of infrared sensitive materials |
US6955211B2 (en) | 2002-07-17 | 2005-10-18 | Applied Materials, Inc. | Method and apparatus for gas temperature control in a semiconductor processing system |
GB0407804D0 (en) * | 2004-04-06 | 2004-05-12 | Qinetiq Ltd | Manufacture of cadmium mercury telluride |
WO2006013344A1 (en) * | 2004-08-02 | 2006-02-09 | Qinetiq Limited | Manufacture of cadmium mercury telluride on patterned silicon |
CN100509635C (zh) * | 2007-01-15 | 2009-07-08 | 山东师范大学 | 水溶性CdHgTe纳米棒的合成方法及纳米棒的用途 |
CA2649322C (en) * | 2008-09-30 | 2011-02-01 | 5N Plus Inc. | Cadmium telluride production process |
US8043954B1 (en) | 2010-03-30 | 2011-10-25 | Primestar Solar, Inc. | Methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device |
EP3586374B1 (en) | 2017-02-24 | 2022-12-28 | First Solar, Inc. | Method of preparing and treating p-type photovoltaic semiconductor layers |
CN107675251B (zh) * | 2017-09-28 | 2019-07-16 | 哈尔滨工业大学 | 一种高纯硒化镉多晶材料的气相合成方法 |
EP3786321A3 (de) * | 2019-08-27 | 2021-03-17 | Albert-Ludwigs-Universität Freiburg | Verfahren und vorrichtung zur herstellung einer schicht und damit versehenes substrat |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3312571A (en) * | 1961-10-09 | 1967-04-04 | Monsanto Co | Production of epitaxial films |
US3218203A (en) * | 1961-10-09 | 1965-11-16 | Monsanto Co | Altering proportions in vapor deposition process to form a mixed crystal graded energy gap |
US3619283A (en) * | 1968-09-27 | 1971-11-09 | Ibm | Method for epitaxially growing thin films |
US3725135A (en) * | 1968-10-09 | 1973-04-03 | Honeywell Inc | PROCESS FOR PREPARING EPITAXIAL LAYERS OF Hg{11 {118 {11 Cd{11 Te |
US3779803A (en) * | 1969-11-17 | 1973-12-18 | Ibm | Infrared sensitive semiconductor device and method of manufacture |
US3664866A (en) * | 1970-04-08 | 1972-05-23 | North American Rockwell | Composite, method for growth of ii{11 {14 vi{11 {0 compounds on substrates, and process for making composition for the compounds |
US4105478A (en) * | 1977-01-06 | 1978-08-08 | Honeywell, Inc. | Doping hgcdte with li |
US4439267A (en) * | 1982-09-29 | 1984-03-27 | The United States Of America As Represented By The Secretary Of The Army | Vapor-phase method for growing mercury cadmium telluride |
-
1981
- 1981-05-15 EP EP81302178A patent/EP0040939B1/en not_active Expired
- 1981-05-15 DE DE8181302178T patent/DE3168017D1/de not_active Expired
- 1981-05-22 IL IL62937A patent/IL62937A/xx not_active IP Right Cessation
- 1981-05-26 CA CA000378354A patent/CA1192475A/en not_active Expired
- 1981-05-26 JP JP56079953A patent/JPS5771190A/ja active Granted
-
1982
- 1982-09-30 US US06/430,620 patent/US4650539A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS5771190A (en) | 1982-05-01 |
JPH0350834B2 (ja) | 1991-08-02 |
US4650539A (en) | 1987-03-17 |
EP0040939B1 (en) | 1985-01-02 |
DE3168017D1 (en) | 1985-02-14 |
EP0040939A1 (en) | 1981-12-02 |
IL62937A0 (en) | 1981-07-31 |
CA1192475A (en) | 1985-08-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
KB | Patent renewed | ||
EXP | Patent expired | ||
HP | Change in proprietorship |