IL59298A - Digital sense circuitry for use with semiconductor random access memories(ram) - Google Patents

Digital sense circuitry for use with semiconductor random access memories(ram)

Info

Publication number
IL59298A
IL59298A IL59298A IL5929880A IL59298A IL 59298 A IL59298 A IL 59298A IL 59298 A IL59298 A IL 59298A IL 5929880 A IL5929880 A IL 5929880A IL 59298 A IL59298 A IL 59298A
Authority
IL
Israel
Prior art keywords
ram
random access
access memories
sense circuitry
semiconductor random
Prior art date
Application number
IL59298A
Other languages
English (en)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IL59298A publication Critical patent/IL59298A/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Amplifiers (AREA)
IL59298A 1979-02-09 1980-02-04 Digital sense circuitry for use with semiconductor random access memories(ram) IL59298A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/010,740 US4274013A (en) 1979-02-09 1979-02-09 Sense amplifier

Publications (1)

Publication Number Publication Date
IL59298A true IL59298A (en) 1982-08-31

Family

ID=21747177

Family Applications (1)

Application Number Title Priority Date Filing Date
IL59298A IL59298A (en) 1979-02-09 1980-02-04 Digital sense circuitry for use with semiconductor random access memories(ram)

Country Status (12)

Country Link
US (1) US4274013A (nl)
JP (1) JPS56500232A (nl)
KR (1) KR830001933B1 (nl)
AU (1) AU531442B2 (nl)
BE (1) BE881569A (nl)
CA (1) CA1140222A (nl)
FR (1) FR2448811A1 (nl)
GB (1) GB2053612B (nl)
IL (1) IL59298A (nl)
IT (1) IT1128039B (nl)
NL (1) NL8020070A (nl)
WO (1) WO1980001730A1 (nl)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5755592A (en) * 1980-09-18 1982-04-02 Nec Corp Memory device
US4421996A (en) * 1981-10-09 1983-12-20 Advanced Micro Devices, Inc. Sense amplification scheme for random access memory
US4494220A (en) * 1982-11-24 1985-01-15 At&T Bell Laboratories Folded bit line memory with one decoder per pair of spare rows
USRE33266E (en) * 1982-11-24 1990-07-17 American Telephone And Telegraph Company, At&T Bell Laboratories Folded bit line memory with one decoder per pair of spare rows
EP0111230B1 (en) * 1982-11-26 1987-03-11 Nec Corporation Voltage comparator circuit
US4558240A (en) * 1983-04-21 1985-12-10 Rca Corporation Multi mode amplifier
US4542483A (en) * 1983-12-02 1985-09-17 At&T Bell Laboratories Dual stage sense amplifier for dynamic random access memory
US4611130A (en) * 1984-02-13 1986-09-09 At&T Bell Laboratories Floating input comparator with precharging of input parasitic capacitors
US4584672A (en) * 1984-02-22 1986-04-22 Intel Corporation CMOS dynamic random-access memory with active cycle one half power supply potential bit line precharge
US4694205A (en) * 1985-06-03 1987-09-15 Advanced Micro Devices, Inc. Midpoint sense amplification scheme for a CMOS DRAM
US4716320A (en) * 1986-06-20 1987-12-29 Texas Instruments Incorporated CMOS sense amplifier with isolated sensing nodes
JPS6363196A (ja) * 1986-09-02 1988-03-19 Fujitsu Ltd 半導体記憶装置
US4843264A (en) * 1987-11-25 1989-06-27 Visic, Inc. Dynamic sense amplifier for CMOS static RAM
US5226014A (en) * 1990-12-24 1993-07-06 Ncr Corporation Low power pseudo-static ROM
EP0526427B1 (en) * 1991-07-25 1997-10-15 STMicroelectronics S.r.l. Sense amplifier for programmable memories with a virtually enhanced source of signal
GB9509817D0 (en) * 1995-05-11 1995-07-05 Xilinx Inc Sense amplifier for reading logic device
DE19621769C1 (de) * 1996-05-30 1997-06-19 Siemens Ag Leseverstärker für Halbleiterspeicherzellen mit einer Einrichtung zur Kompensation von Schwellenspannungsunterschieden bei den Leseverstärkertransistoren
US7221605B2 (en) * 2004-08-31 2007-05-22 Micron Technology, Inc. Switched capacitor DRAM sense amplifier with immunity to mismatch and offsets
US20100006191A1 (en) * 2008-07-09 2010-01-14 Brush Wellman, Inc. HIGH STRENGTH Be/Cu ALLOYS WITH IMPROVED ELECTRICAL CONDUCTIVITY
US8604838B2 (en) 2011-12-12 2013-12-10 Texas Instruments Incorporated Comparator with improved time constant
USD879408S1 (en) 2016-06-06 2020-03-31 Mondelez Europe Gmbh Cracker
USD862834S1 (en) 2016-06-27 2019-10-15 Mondelez Europe Gmbh Cracker
USD887666S1 (en) 2017-05-19 2020-06-23 Generale Biscuit Food bar

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3838295A (en) * 1973-02-05 1974-09-24 Lockheed Electronics Co Ratioless mos sense amplifier
JPS51113545A (en) * 1975-03-31 1976-10-06 Hitachi Ltd Memory
US4007381A (en) * 1975-04-18 1977-02-08 Bell Telephone Laboratories, Incorporated Balanced regenerative charge detection circuit for semiconductor charge transfer devices
US4021682A (en) * 1975-06-30 1977-05-03 Honeywell Information Systems, Inc. Charge detectors for CCD registers
DE2634089C3 (de) * 1975-08-11 1988-09-08 Nippon Telegraph And Telephone Corp., Tokio/Tokyo Schaltungsanordnung zum Erfassen schwacher Signale
US4061999A (en) * 1975-12-29 1977-12-06 Mostek Corporation Dynamic random access memory system
US4069474A (en) * 1976-04-15 1978-01-17 National Semiconductor Corporation MOS Dynamic random access memory having an improved sensing circuit
US4050061A (en) * 1976-05-03 1977-09-20 Texas Instruments Incorporated Partitioning of MOS random access memory array
US4053873A (en) * 1976-06-30 1977-10-11 International Business Machines Corporation Self-isolating cross-coupled sense amplifier latch circuit
DE2630797C2 (de) * 1976-07-08 1978-08-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Funktionsgenerator zur Erzeugung einer Spannung an einem Knoten, an den den Bitleitungen eines MOS-Speichers zugeordnete Flip-Flops aus MOS-Transistoren angeschlossen sind
DE2712735B1 (de) * 1977-03-23 1978-09-14 Ibm Deutschland Lese-/Schreibzugriffschaltung zu Speicherzellen eines Speichers und Verfahren zu ihrem Betrieb
US4162416A (en) * 1978-01-16 1979-07-24 Bell Telephone Laboratories, Incorporated Dynamic sense-refresh detector amplifier
US4158241A (en) * 1978-06-15 1979-06-12 Fujitsu Limited Semiconductor memory device with a plurality of memory cells and a sense amplifier circuit thereof

Also Published As

Publication number Publication date
FR2448811A1 (fr) 1980-09-05
GB2053612B (en) 1983-05-18
AU5519580A (en) 1980-08-14
US4274013A (en) 1981-06-16
KR830001933B1 (ko) 1983-09-23
GB2053612A (en) 1981-02-04
CA1140222A (en) 1983-01-25
AU531442B2 (en) 1983-08-25
KR830002451A (ko) 1983-05-28
BE881569A (fr) 1980-05-30
NL8020070A (nl) 1980-12-31
IT1128039B (it) 1986-05-28
IT8067198A0 (it) 1980-02-08
JPS56500232A (nl) 1981-02-26
WO1980001730A1 (en) 1980-08-21

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Legal Events

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