FR2448811A1 - Circuit de detection numerique - Google Patents

Circuit de detection numerique

Info

Publication number
FR2448811A1
FR2448811A1 FR8002363A FR8002363A FR2448811A1 FR 2448811 A1 FR2448811 A1 FR 2448811A1 FR 8002363 A FR8002363 A FR 8002363A FR 8002363 A FR8002363 A FR 8002363A FR 2448811 A1 FR2448811 A1 FR 2448811A1
Authority
FR
France
Prior art keywords
cross
coupling
transistors
detection circuit
digital detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR8002363A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2448811A1 publication Critical patent/FR2448811A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Amplifiers (AREA)

Abstract

L'INVENTION CONCERNE LES AMPLIFICATEURS DE DETECTION ASSOCIES AUX MEMOIRES. UN AMPLIFICATEUR DE DETECTION UTILISE UNE PAIRE DE TRANSISTORS Q1, Q2 A COUPLAGE CROISE ET DES TRANSISTORS SEPARES Q3, Q4 DONT LES SOURCES SONT CONNECTEES A CHACUNE DES BORNES A COUPLAGE CROISE 12, 14 DE LA PAIRE A COUPLAGE CROISE. UN CIRCUIT DE LECTURE Q7, Q8 EST CONNECTE DIRECTEMENT AUX BORNES 12, 14 TANDIS QU'UN CIRCUIT D'ECRITURE Q9, Q10 EST CONNECTE AUX DRAINS DES TROISIEME ET QUATRIEME TRANSISTORS Q3, Q4. APPLICATION AUX MEMOIRES A SEMI-CONDUCTEURS.
FR8002363A 1979-02-09 1980-02-04 Circuit de detection numerique Pending FR2448811A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/010,740 US4274013A (en) 1979-02-09 1979-02-09 Sense amplifier

Publications (1)

Publication Number Publication Date
FR2448811A1 true FR2448811A1 (fr) 1980-09-05

Family

ID=21747177

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8002363A Pending FR2448811A1 (fr) 1979-02-09 1980-02-04 Circuit de detection numerique

Country Status (12)

Country Link
US (1) US4274013A (fr)
JP (1) JPS56500232A (fr)
KR (1) KR830001933B1 (fr)
AU (1) AU531442B2 (fr)
BE (1) BE881569A (fr)
CA (1) CA1140222A (fr)
FR (1) FR2448811A1 (fr)
GB (1) GB2053612B (fr)
IL (1) IL59298A (fr)
IT (1) IT1128039B (fr)
NL (1) NL8020070A (fr)
WO (1) WO1980001730A1 (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5755592A (en) * 1980-09-18 1982-04-02 Nec Corp Memory device
US4421996A (en) * 1981-10-09 1983-12-20 Advanced Micro Devices, Inc. Sense amplification scheme for random access memory
US4494220A (en) * 1982-11-24 1985-01-15 At&T Bell Laboratories Folded bit line memory with one decoder per pair of spare rows
USRE33266E (en) * 1982-11-24 1990-07-17 American Telephone And Telegraph Company, At&T Bell Laboratories Folded bit line memory with one decoder per pair of spare rows
EP0111230B1 (fr) * 1982-11-26 1987-03-11 Nec Corporation Dispositif pour comparer des tensions
US4558240A (en) * 1983-04-21 1985-12-10 Rca Corporation Multi mode amplifier
US4542483A (en) * 1983-12-02 1985-09-17 At&T Bell Laboratories Dual stage sense amplifier for dynamic random access memory
US4611130A (en) * 1984-02-13 1986-09-09 At&T Bell Laboratories Floating input comparator with precharging of input parasitic capacitors
US4584672A (en) * 1984-02-22 1986-04-22 Intel Corporation CMOS dynamic random-access memory with active cycle one half power supply potential bit line precharge
US4694205A (en) * 1985-06-03 1987-09-15 Advanced Micro Devices, Inc. Midpoint sense amplification scheme for a CMOS DRAM
US4716320A (en) * 1986-06-20 1987-12-29 Texas Instruments Incorporated CMOS sense amplifier with isolated sensing nodes
JPS6363196A (ja) * 1986-09-02 1988-03-19 Fujitsu Ltd 半導体記憶装置
US4843264A (en) * 1987-11-25 1989-06-27 Visic, Inc. Dynamic sense amplifier for CMOS static RAM
US5226014A (en) * 1990-12-24 1993-07-06 Ncr Corporation Low power pseudo-static ROM
EP0526427B1 (fr) * 1991-07-25 1997-10-15 STMicroelectronics S.r.l. Amplificateur de détection pour mémoires programmables avec une source virtuelle améliorée de signal
GB9509817D0 (en) * 1995-05-11 1995-07-05 Xilinx Inc Sense amplifier for reading logic device
DE19621769C1 (de) * 1996-05-30 1997-06-19 Siemens Ag Leseverstärker für Halbleiterspeicherzellen mit einer Einrichtung zur Kompensation von Schwellenspannungsunterschieden bei den Leseverstärkertransistoren
US7221605B2 (en) * 2004-08-31 2007-05-22 Micron Technology, Inc. Switched capacitor DRAM sense amplifier with immunity to mismatch and offsets
US20100006191A1 (en) * 2008-07-09 2010-01-14 Brush Wellman, Inc. HIGH STRENGTH Be/Cu ALLOYS WITH IMPROVED ELECTRICAL CONDUCTIVITY
US8604838B2 (en) 2011-12-12 2013-12-10 Texas Instruments Incorporated Comparator with improved time constant
USD879408S1 (en) 2016-06-06 2020-03-31 Mondelez Europe Gmbh Cracker
USD862834S1 (en) 2016-06-27 2019-10-15 Mondelez Europe Gmbh Cracker
USD887666S1 (en) 2017-05-19 2020-06-23 Generale Biscuit Food bar

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3838295A (en) * 1973-02-05 1974-09-24 Lockheed Electronics Co Ratioless mos sense amplifier
US4007381A (en) * 1975-04-18 1977-02-08 Bell Telephone Laboratories, Incorporated Balanced regenerative charge detection circuit for semiconductor charge transfer devices
US4053873A (en) * 1976-06-30 1977-10-11 International Business Machines Corporation Self-isolating cross-coupled sense amplifier latch circuit
US4119871A (en) * 1976-07-08 1978-10-10 Siemens Aktiengesellschaft Function generator for the production of a voltage across a node to which are connected flip-flops which are arranged in bit lines of a MOS memory and consists of MOS transistors

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51113545A (en) * 1975-03-31 1976-10-06 Hitachi Ltd Memory
US4021682A (en) * 1975-06-30 1977-05-03 Honeywell Information Systems, Inc. Charge detectors for CCD registers
DE2634089C3 (de) * 1975-08-11 1988-09-08 Nippon Telegraph And Telephone Corp., Tokio/Tokyo Schaltungsanordnung zum Erfassen schwacher Signale
US4061999A (en) * 1975-12-29 1977-12-06 Mostek Corporation Dynamic random access memory system
US4069474A (en) * 1976-04-15 1978-01-17 National Semiconductor Corporation MOS Dynamic random access memory having an improved sensing circuit
US4050061A (en) * 1976-05-03 1977-09-20 Texas Instruments Incorporated Partitioning of MOS random access memory array
DE2712735B1 (de) * 1977-03-23 1978-09-14 Ibm Deutschland Lese-/Schreibzugriffschaltung zu Speicherzellen eines Speichers und Verfahren zu ihrem Betrieb
US4162416A (en) * 1978-01-16 1979-07-24 Bell Telephone Laboratories, Incorporated Dynamic sense-refresh detector amplifier
US4158241A (en) * 1978-06-15 1979-06-12 Fujitsu Limited Semiconductor memory device with a plurality of memory cells and a sense amplifier circuit thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3838295A (en) * 1973-02-05 1974-09-24 Lockheed Electronics Co Ratioless mos sense amplifier
US4007381A (en) * 1975-04-18 1977-02-08 Bell Telephone Laboratories, Incorporated Balanced regenerative charge detection circuit for semiconductor charge transfer devices
US4053873A (en) * 1976-06-30 1977-10-11 International Business Machines Corporation Self-isolating cross-coupled sense amplifier latch circuit
US4119871A (en) * 1976-07-08 1978-10-10 Siemens Aktiengesellschaft Function generator for the production of a voltage across a node to which are connected flip-flops which are arranged in bit lines of a MOS memory and consists of MOS transistors

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
EXBK/74 *
EXBK/76 *
EXRV/79 *

Also Published As

Publication number Publication date
GB2053612B (en) 1983-05-18
AU5519580A (en) 1980-08-14
IL59298A (en) 1982-08-31
US4274013A (en) 1981-06-16
KR830001933B1 (ko) 1983-09-23
GB2053612A (en) 1981-02-04
CA1140222A (fr) 1983-01-25
AU531442B2 (en) 1983-08-25
KR830002451A (ko) 1983-05-28
BE881569A (fr) 1980-05-30
NL8020070A (nl) 1980-12-31
IT1128039B (it) 1986-05-28
IT8067198A0 (it) 1980-02-08
JPS56500232A (fr) 1981-02-26
WO1980001730A1 (fr) 1980-08-21

Similar Documents

Publication Publication Date Title
FR2448811A1 (fr) Circuit de detection numerique
FR2437735A1 (fr) Circuit integre a filtre variable
FR2355398A1 (fr) Amplificateur hyperfrequence
NL7903368A (nl) Videosignaalbewerkingsschakeling.
SE7714293L (sv) Forsterkarkrets
BG28847A3 (en) Method of obtaining of hydantion derivatives
NL7709358A (nl) Video-signaalbewerkingsschakeling.
IT8122547A0 (it) Complesso circuitale comprendente due amplificatori differenziali ad accoppiamento incrociato.
KR860002102A (ko) 샘플 및 홀드회로
JPS5762779A (en) Alwave rectifying circuit
FR2406849A1 (fr) Circuit de polarisation a courant constant
SE7409950L (fr)
GB1257316A (fr)
ATE11199T1 (de) Mit phasenaufteilung arbeitender, stereophoner schallsynthesizer.
AT374648B (de) Videoausgangsverstaerker
FI823020A0 (fi) Speciellt foer television avsedd kopplingsanordning foer mottagning av tvao moduleringssignaler
JPS5564418A (en) Variable impedance circuit
JPS5760800A (en) Tone quality adjusting circuit
JPS5258345A (en) Transistor circuit
JPS5363955A (en) Amplifier
SE7811747L (sv) Differentialforsterkare med mos-felteffekttransistorer
SU605308A1 (ru) Дифференциальный усилитель
JPS572200A (en) Sound image control circuit
SU545920A2 (ru) Первичный измерительный преобразователь
JPS52136503A (en) Noise suppession circuit