IL284987A - Electrodeposition of a copper or cobalt alloy, and use in microelectronics - Google Patents

Electrodeposition of a copper or cobalt alloy, and use in microelectronics

Info

Publication number
IL284987A
IL284987A IL284987A IL28498721A IL284987A IL 284987 A IL284987 A IL 284987A IL 284987 A IL284987 A IL 284987A IL 28498721 A IL28498721 A IL 28498721A IL 284987 A IL284987 A IL 284987A
Authority
IL
Israel
Prior art keywords
microelectronics
electrodeposition
cobalt
copper alloy
alloy
Prior art date
Application number
IL284987A
Other languages
English (en)
Hebrew (he)
Original Assignee
Aveni
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/EP2020/053018 external-priority patent/WO2020161256A1/fr
Application filed by Aveni filed Critical Aveni
Publication of IL284987A publication Critical patent/IL284987A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/562—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of iron or nickel or cobalt
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34—Pretreatment of metallic surfaces to be electroplated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C25D5/50—After-treatment of electroplated surfaces by heat-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76867—Barrier, adhesion or liner layers characterized by methods of formation other than PVD, CVD or deposition from a liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76883—Post-treatment or after-treatment of the conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
IL284987A 2019-02-08 2021-07-20 Electrodeposition of a copper or cobalt alloy, and use in microelectronics IL284987A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1901264A FR3092589A1 (fr) 2019-02-08 2019-02-08 Electrodéposition d’un alliage de cobalt et utilisation en microélectronique
FR2000297A FR3092590A1 (fr) 2019-02-08 2020-01-14 Electrodéposition d’un alliage de cobalt ou de cuivre, et utilisation en microélectronique
PCT/EP2020/053018 WO2020161256A1 (fr) 2019-02-08 2020-02-06 Électrodéposition d'un alliage de cobalt ou de cuivre et son utilisation en microélectronique

Publications (1)

Publication Number Publication Date
IL284987A true IL284987A (en) 2021-09-30

Family

ID=67875503

Family Applications (1)

Application Number Title Priority Date Filing Date
IL284987A IL284987A (en) 2019-02-08 2021-07-20 Electrodeposition of a copper or cobalt alloy, and use in microelectronics

Country Status (5)

Country Link
EP (1) EP3921460A1 (fr)
KR (1) KR102562159B1 (fr)
CN (1) CN113383115B (fr)
FR (2) FR3092589A1 (fr)
IL (1) IL284987A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3115046B1 (fr) * 2020-10-09 2023-12-01 Aveni Procédé pour la fabrication d’une mémoire 3D-NAND

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2317153A (en) * 1938-07-14 1943-04-20 Chicago Dev Co Process for the electrodeposition of manganese
JPH0244911B2 (ja) * 1986-10-31 1990-10-05 Uemura Kogyo Kk Denkimetsukihoho
KR100455083B1 (ko) * 2000-12-22 2004-11-08 주식회사 포스코 내식성 및 용접성이 우수한 아연-코발트-텅스텐 합금전기도금강판 및 그 도금용액
KR100851229B1 (ko) * 2001-12-26 2008-08-07 주식회사 포스코 양극의 부동태화를 방지할 수 있는 아연-코발트-텅스텐합금전기도금용액
WO2003060959A2 (fr) * 2002-01-10 2003-07-24 Semitool, Inc. Procede pour appliquer des elements metalliques a des couches barrieres par depot electrochimique
JP2004068138A (ja) * 2002-08-09 2004-03-04 Nippon Parkerizing Co Ltd 黒色合金めっき液
EP1969160B1 (fr) * 2006-01-06 2011-04-27 Enthone, Incorporated Électrolyte et procédé de séparation d une couche métallique mate
US20120141667A1 (en) * 2010-07-16 2012-06-07 Applied Materials, Inc. Methods for forming barrier/seed layers for copper interconnect structures
EP2565297A3 (fr) * 2011-08-30 2013-04-24 Rohm and Haas Electronic Materials LLC Promotion de l'adhérence de bronze blanc exempt de cyanure
US9997457B2 (en) 2013-12-20 2018-06-12 Intel Corporation Cobalt based interconnects and methods of fabrication thereof
CN104046776A (zh) * 2014-06-16 2014-09-17 天津市茂联科技有限公司 一种从高铁合金中回收有价金属的工艺
US20160309596A1 (en) * 2015-04-15 2016-10-20 Applied Materials, Inc. Methods for forming cobalt interconnects
JP6903061B2 (ja) * 2016-01-21 2021-07-14 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｓｉ貫通電極のメッキのプロセス及び化学作用
CN108342569A (zh) * 2017-12-29 2018-07-31 衡阳市坤泰化工实业有限公司 从粗锌原料中除去杂质金属钴以获得含锌溶液的方法

Also Published As

Publication number Publication date
FR3092589A1 (fr) 2020-08-14
CN113383115B (zh) 2024-09-10
KR102562159B1 (ko) 2023-08-01
KR20210124422A (ko) 2021-10-14
EP3921460A1 (fr) 2021-12-15
CN113383115A (zh) 2021-09-10
TW202045778A (zh) 2020-12-16
FR3092590A1 (fr) 2020-08-14

Similar Documents

Publication Publication Date Title
EP3748023A4 (fr) Alliage de cuivre renforcé par précipitation et son utilisation
EP3733921A4 (fr) Matériau d'acier plaqué d'alliage de zinc affichant d'excellentes propriétés de qualité de surface et de résistance à la corrosion, et son procédé de fabrication
PL3315229T5 (pl) Zastosowanie proszku stopu miedzi, sposób wytwarzania wyrobu wytworzonego metodą przyrostową i wyrób wytworzony metodą przyrostową
EP3561116A4 (fr) Matériau d'acier plaqué aluminisé ayant une excellente résistance à la corrosion, matériau d'acier plaqué d'alliage d'aluminium l'utilisant, et procédé de fabrication dudit matériau d'acier plaqué aluminisé et dudit matériau d'acier plaqué d'alliage d'aluminium
SG11202012578UA (en) Cobalt based alloy product and method for manufacturing same
SG11202012575WA (en) Cobalt based alloy product
SG11201406599RA (en) Copper-nickel alloy electroplating bath and plating method
EP3733918A4 (fr) Matériau d'acier plaqué d'alliage de zinc ayant une excellente résistance à la corosion après traitement et son procédé de fabrication
GB201707019D0 (en) Low cobalt hard facing alloy
EP3642376C0 (fr) Alliage à base de fer approprié pour fournir un revêtement dur et résistant à l'usure sur un substrat, article comprenant un revêtement dur et résistant à l'usure, et son procédé de production
EP3561155A4 (fr) Acier plaqué d'alliage de zinc à soudabilité et résistance à la corrosion supérieures
PL2852698T3 (pl) Kąpiel galwaniczna do powlekania niklem lub stopem niklu w celu osadzania pół-błyszczącej warstwy niklu lub stopu niklu
SG11202012650YA (en) Cobalt based alloy product and cobalt based alloy article
SG11202101253RA (en) Precious metal article having plating layer on surface and preparation method thereof
EP3561147A4 (fr) Acier plaqué d'alliage de zinc ayant une excellente soudabilité et une excellente résistance à la corrosion
EP3275009A4 (fr) Plot de connexion métallique à couche d'interconnexion de cobalt et pâte à braser sur celui-ci
ZA202203714B (en) Copper alloy material, preparation method therefor and use thereof
EP3719165C0 (fr) Procédé de fabrication d'un alliage à base de ni et alliage à base de ni
HUE048367T2 (hu) Rézötvözetpor alkalmazása, eljárás termékek additív technológiával történõ elõállítására, és additív technológiával elõállított termék
PT3356579T (pt) Banho de galvanoplastia para deposição eletroquímica de uma camada de liga de cu-sn-zn-pd, método para a deposição eletroquímica da referida camada de liga, substrato que compreende a referida camada de liga e utilizações do substrato revestido
EP3950980A4 (fr) Plaque d'alliage de cuivre, plaque d'alliage de cuivre avec film de placage et leurs procédés de fabrication
PL3872198T3 (pl) Automatowy stop miedzi i sposób wytwarzania automatowego stopu miedzi
IL284987A (en) Electrodeposition of a copper or cobalt alloy, and use in microelectronics
EP3561134A4 (fr) Matériau d'acier plaqué d'un alliage zinc/magnésium présentant une excellente résistance à la corrosion et une excellente adhérence de placage
EP2395131A4 (fr) Bain de placage d'alliage contenant de l'argent et procédé de placage électrolytique utilisant celui-ci