IL276811B2 - Metrology and control of coverage and end position errors - Google Patents
Metrology and control of coverage and end position errorsInfo
- Publication number
- IL276811B2 IL276811B2 IL276811A IL27681120A IL276811B2 IL 276811 B2 IL276811 B2 IL 276811B2 IL 276811 A IL276811 A IL 276811A IL 27681120 A IL27681120 A IL 27681120A IL 276811 B2 IL276811 B2 IL 276811B2
- Authority
- IL
- Israel
- Prior art keywords
- overlay
- metrology
- target
- features
- metrology system
- Prior art date
Links
- 238000005259 measurement Methods 0.000 claims 52
- 230000003287 optical effect Effects 0.000 claims 34
- 238000013519 translation Methods 0.000 claims 6
- 238000001459 lithography Methods 0.000 claims 3
- 238000003384 imaging method Methods 0.000 claims 2
- 238000007689 inspection Methods 0.000 claims 2
- 238000010884 ion-beam technique Methods 0.000 claims 2
- 238000000926 separation method Methods 0.000 claims 2
- 238000013461 design Methods 0.000 claims 1
- 238000011161 development Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
- G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
- G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Inspection Of Paper Currency And Valuable Securities (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Paper (AREA)
- Length Measuring Devices With Unspecified Measuring Means (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862638900P | 2018-03-05 | 2018-03-05 | |
| US16/057,498 US10533848B2 (en) | 2018-03-05 | 2018-08-07 | Metrology and control of overlay and edge placement errors |
| PCT/US2019/020471 WO2019173171A1 (en) | 2018-03-05 | 2019-03-04 | Metrology and control of overlay and edge placement errors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL276811A IL276811A (en) | 2020-10-29 |
| IL276811B2 true IL276811B2 (en) | 2023-06-01 |
Family
ID=67768073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL276811A IL276811B2 (en) | 2018-03-05 | 2020-08-19 | Metrology and control of coverage and end position errors |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10533848B2 (enExample) |
| EP (1) | EP3762780B1 (enExample) |
| JP (1) | JP7177846B2 (enExample) |
| KR (1) | KR102450009B1 (enExample) |
| CN (1) | CN111801625B (enExample) |
| IL (1) | IL276811B2 (enExample) |
| SG (1) | SG11202008005WA (enExample) |
| TW (1) | TWI781298B (enExample) |
| WO (1) | WO2019173171A1 (enExample) |
Families Citing this family (33)
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| US11353799B1 (en) | 2019-07-23 | 2022-06-07 | Kla Corporation | System and method for error reduction for metrology measurements |
| US11360397B2 (en) * | 2019-09-17 | 2022-06-14 | Kla Corporation | System and method for application of harmonic detectivity as a quality indicator for imaging-based overlay measurements |
| EP3842866A1 (en) * | 2019-12-24 | 2021-06-30 | ASML Netherlands B.V. | Metrology method |
| US11698251B2 (en) | 2020-01-07 | 2023-07-11 | Kla Corporation | Methods and systems for overlay measurement based on soft X-ray Scatterometry |
| US11809090B2 (en) * | 2020-01-30 | 2023-11-07 | Kla Corporation | Composite overlay metrology target |
| US11054753B1 (en) * | 2020-04-20 | 2021-07-06 | Applied Materials Israel Ltd. | Overlay monitoring |
| US11353321B2 (en) | 2020-06-12 | 2022-06-07 | Kla Corporation | Metrology system and method for measuring diagonal diffraction-based overlay targets |
| US20230333485A1 (en) * | 2020-09-28 | 2023-10-19 | Asml Netherlands B.V. | Target structure and associated methods and apparatus |
| US11829077B2 (en) | 2020-12-11 | 2023-11-28 | Kla Corporation | System and method for determining post bonding overlay |
| US11428642B2 (en) * | 2021-01-04 | 2022-08-30 | Kla Corporation | Scanning scatterometry overlay measurement |
| US11967535B2 (en) * | 2021-04-13 | 2024-04-23 | Kla Corporation | On-product overlay targets |
| US11604420B2 (en) * | 2021-05-03 | 2023-03-14 | Kla Corporation | Self-calibrating overlay metrology |
| US12663728B2 (en) | 2021-05-04 | 2026-06-23 | Kla Corporation | Oblique illumination for overlay metrology |
| TWI795798B (zh) * | 2021-06-02 | 2023-03-11 | 東龍投資股份有限公司 | 對準誤差補償方法及其系統 |
| US11862524B2 (en) | 2021-06-28 | 2024-01-02 | Kla Corporation | Overlay mark design for electron beam overlay |
| US11703767B2 (en) | 2021-06-28 | 2023-07-18 | Kla Corporation | Overlay mark design for electron beam overlay |
| US11728192B2 (en) * | 2021-07-22 | 2023-08-15 | Globalfoundries U.S. Inc. | Refining defect detection using process window |
| US12644696B2 (en) | 2021-07-28 | 2026-06-02 | Kla Corporation | System and method for detecting particle contamination on a bonding tool |
| US12645152B2 (en) | 2021-07-28 | 2026-06-02 | Kla Corporation | System and method for optimizing through silicon via overlay |
| US11782411B2 (en) | 2021-07-28 | 2023-10-10 | Kla Corporation | System and method for mitigating overlay distortion patterns caused by a wafer bonding tool |
| WO2023069095A1 (en) * | 2021-10-21 | 2023-04-27 | Kla Corporation | Induced displacements for improved overlay error metrology |
| EP4377751A4 (en) * | 2022-01-13 | 2025-09-03 | Kla Corp | CALIBRATED MEASUREMENT OF SUPERPOSITION ERROR USING SMALL TARGETS |
| US11861824B1 (en) * | 2022-02-03 | 2024-01-02 | Kla Corporation | Reference image grouping in overlay metrology |
| US12614256B2 (en) | 2022-03-31 | 2026-04-28 | Kla Corporation | Shot noise reduction using frame averaging |
| US11921052B2 (en) | 2022-03-31 | 2024-03-05 | Kla Corporation | Inspection with previous step subtraction |
| US11922619B2 (en) | 2022-03-31 | 2024-03-05 | Kla Corporation | Context-based defect inspection |
| US20250199418A1 (en) * | 2022-09-08 | 2025-06-19 | Asml Netherlands B.V. | Measuring contrast and critical dimension using an alignment sensor |
| US12674662B2 (en) | 2022-09-16 | 2026-07-07 | KLA Coporation | System and method for acquiring alignment measurements of structures of a bonded sample |
| US12067745B2 (en) | 2022-09-27 | 2024-08-20 | Kla Corporation | Image pre-processing for overlay metrology using decomposition techniques |
| US12092966B2 (en) | 2022-11-23 | 2024-09-17 | Kla Corporation | Device feature specific edge placement error (EPE) |
| US20250272812A1 (en) * | 2024-02-26 | 2025-08-28 | Kla Corporation | Side-by-side off-center die overlay target |
| US20250385066A1 (en) * | 2024-06-14 | 2025-12-18 | Kla Corporation | High-voltage column with permanent magnet lens and positive wafer bias for overlay |
| US20260185927A1 (en) * | 2024-12-30 | 2026-07-02 | Kla Corporation | Spectral overlay target |
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| US5617340A (en) | 1994-04-28 | 1997-04-01 | The United States Of America As Represented By The Secretary Of Commerce | Method and reference standards for measuring overlay in multilayer structures, and for calibrating imaging equipment as used in semiconductor manufacturing |
| US5757507A (en) * | 1995-11-20 | 1998-05-26 | International Business Machines Corporation | Method of measuring bias and edge overlay error for sub-0.5 micron ground rules |
| US6484060B1 (en) | 2000-03-24 | 2002-11-19 | Micron Technology, Inc. | Layout for measurement of overlay error |
| TW588414B (en) * | 2000-06-08 | 2004-05-21 | Toshiba Corp | Alignment method, overlap inspecting method and mask |
| US7068833B1 (en) | 2000-08-30 | 2006-06-27 | Kla-Tencor Corporation | Overlay marks, methods of overlay mark design and methods of overlay measurements |
| US6982793B1 (en) | 2002-04-04 | 2006-01-03 | Nanometrics Incorporated | Method and apparatus for using an alignment target with designed in offset |
| EP1614153A2 (en) | 2003-04-08 | 2006-01-11 | AOTI Operating Company, Inc. | Overlay metrology mark |
| DE10345466A1 (de) | 2003-09-30 | 2005-04-28 | Infineon Technologies Ag | Verfahren zur Erfassung von Plazierungsfehlern von Schaltungsmustern bei der Übertragung mittels einer Maske in Schichten eines Substrats eines Halbleiterwafers |
| US6937337B2 (en) | 2003-11-19 | 2005-08-30 | International Business Machines Corporation | Overlay target and measurement method using reference and sub-grids |
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| KR20070033106A (ko) | 2005-09-20 | 2007-03-26 | 삼성전자주식회사 | 반도체 소자의 오버레이 측정 방법 및 오버레이 측정시스템 |
| DE102007033815A1 (de) | 2007-05-25 | 2008-11-27 | Carl Zeiss Sms Gmbh | Verfahren und Vorrichtung zum Bestimmen der relativen Overlay-Verschiebung von übereinander liegenden Schichten |
| DE102007046850B4 (de) | 2007-09-29 | 2014-05-22 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Verfahren zum Bestimmen einer Überlagerungsgenauigkeit |
| US7879515B2 (en) | 2008-01-21 | 2011-02-01 | International Business Machines Corporation | Method to control semiconductor device overlay using post etch image metrology |
| CN103582819B (zh) * | 2011-04-06 | 2016-09-14 | 科磊股份有限公司 | 用于提供经改进过程控制的质量度量的方法及系统 |
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| JP6002480B2 (ja) | 2012-07-06 | 2016-10-05 | 株式会社日立ハイテクノロジーズ | オーバーレイ誤差測定装置、及びパターン測定をコンピューターに実行させるコンピュータープログラム |
| US9329033B2 (en) * | 2012-09-05 | 2016-05-03 | Kla-Tencor Corporation | Method for estimating and correcting misregistration target inaccuracy |
| US9093458B2 (en) | 2012-09-06 | 2015-07-28 | Kla-Tencor Corporation | Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets |
| TWI470378B (zh) | 2012-11-01 | 2015-01-21 | Ind Tech Res Inst | 量測堆疊對位誤差的方法與系統 |
| KR102312241B1 (ko) | 2012-11-21 | 2021-10-13 | 케이엘에이 코포레이션 | 프로세스 호환 세그먼팅된 타겟들 및 설계 방법들 |
| US9390492B2 (en) | 2013-03-14 | 2016-07-12 | Kla-Tencor Corporation | Method and system for reference-based overlay measurement |
| TWI618913B (zh) | 2013-04-16 | 2018-03-21 | Kla-Tencor Corporation | 用於修正光學誤差之位置量測之方法及用於判定光罩繪製器誤差之方法 |
| WO2014194095A1 (en) * | 2013-05-30 | 2014-12-04 | Kla-Tencor Corporation | Combined imaging and scatterometry metrology |
| US10152654B2 (en) * | 2014-02-20 | 2018-12-11 | Kla-Tencor Corporation | Signal response metrology for image based overlay measurements |
| US10151986B2 (en) * | 2014-07-07 | 2018-12-11 | Kla-Tencor Corporation | Signal response metrology based on measurements of proxy structures |
| WO2016010776A1 (en) * | 2014-07-13 | 2016-01-21 | Kla-Tencor Corporation | Metrology using overlay and yield critical patterns |
| KR102512180B1 (ko) * | 2015-04-28 | 2023-03-20 | 케이엘에이 코포레이션 | 계산 효율적인 x 선 기반의 오버레이 측정 |
| US10018919B2 (en) * | 2016-05-29 | 2018-07-10 | Kla-Tencor Corporation | System and method for fabricating metrology targets oriented with an angle rotated with respect to device features |
| WO2018004511A1 (en) | 2016-06-27 | 2018-01-04 | Kla-Tencor Corporation | Apparatus and method for the measurement of pattern placement and size of pattern and computer program therefor |
| WO2018026373A1 (en) | 2016-08-04 | 2018-02-08 | Kla-Tencor Corporation | Method and computer program product for controlling the positioning of patterns on a substrate in a manufacturing process |
| US10141156B2 (en) | 2016-09-27 | 2018-11-27 | Kla-Tencor Corporation | Measurement of overlay and edge placement errors with an electron beam column array |
| WO2019078901A1 (en) | 2017-10-22 | 2019-04-25 | Kla-Tencor Corporation | USE OF OVERLAY DISTORTION ERROR ESTIMATES IN IMAGING OVERLAY METROLOGY |
-
2018
- 2018-08-07 US US16/057,498 patent/US10533848B2/en active Active
-
2019
- 2019-03-04 TW TW108107028A patent/TWI781298B/zh active
- 2019-03-04 EP EP19764334.9A patent/EP3762780B1/en active Active
- 2019-03-04 JP JP2020546104A patent/JP7177846B2/ja active Active
- 2019-03-04 KR KR1020207028542A patent/KR102450009B1/ko active Active
- 2019-03-04 SG SG11202008005WA patent/SG11202008005WA/en unknown
- 2019-03-04 CN CN201980016789.0A patent/CN111801625B/zh active Active
- 2019-03-04 WO PCT/US2019/020471 patent/WO2019173171A1/en not_active Ceased
-
2020
- 2020-08-19 IL IL276811A patent/IL276811B2/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US20190271542A1 (en) | 2019-09-05 |
| WO2019173171A1 (en) | 2019-09-12 |
| SG11202008005WA (en) | 2020-09-29 |
| EP3762780B1 (en) | 2023-11-29 |
| CN111801625B (zh) | 2021-10-08 |
| EP3762780A1 (en) | 2021-01-13 |
| KR20200118906A (ko) | 2020-10-16 |
| JP2021516366A (ja) | 2021-07-01 |
| EP3762780A4 (en) | 2021-12-15 |
| TW201945857A (zh) | 2019-12-01 |
| JP7177846B2 (ja) | 2022-11-24 |
| CN111801625A (zh) | 2020-10-20 |
| KR102450009B1 (ko) | 2022-09-30 |
| IL276811A (en) | 2020-10-29 |
| US10533848B2 (en) | 2020-01-14 |
| TWI781298B (zh) | 2022-10-21 |
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