IL257488A - Non-volatile semiconductor memory device - Google Patents

Non-volatile semiconductor memory device

Info

Publication number
IL257488A
IL257488A IL257488A IL25748818A IL257488A IL 257488 A IL257488 A IL 257488A IL 257488 A IL257488 A IL 257488A IL 25748818 A IL25748818 A IL 25748818A IL 257488 A IL257488 A IL 257488A
Authority
IL
Israel
Prior art keywords
memory device
semiconductor memory
volatile semiconductor
volatile
semiconductor
Prior art date
Application number
IL257488A
Other languages
Hebrew (he)
Other versions
IL257488B (en
Inventor
Yutaka Shinagawa
Yasuhiro Taniguchi
Hideo Kasai
Ryotaro Sakurai
Yasuhiko Kawashima
Kosuke Okuyama
Fukuo Owada
Shinji Yoshida
Original Assignee
Floadia Corp
Yutaka Shinagawa
Yasuhiro Taniguchi
Hideo Kasai
Ryotaro Sakurai
Yasuhiko Kawashima
Kosuke Okuyama
Fukuo Owada
Shinji Yoshida
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Floadia Corp, Yutaka Shinagawa, Yasuhiro Taniguchi, Hideo Kasai, Ryotaro Sakurai, Yasuhiko Kawashima, Kosuke Okuyama, Fukuo Owada, Shinji Yoshida filed Critical Floadia Corp
Publication of IL257488A publication Critical patent/IL257488A/en
Publication of IL257488B publication Critical patent/IL257488B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
IL257488A 2015-10-01 2018-02-12 Non-volatile semiconductor memory device IL257488B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015195638A JP5951096B1 (en) 2015-10-01 2015-10-01 Nonvolatile semiconductor memory device
PCT/JP2016/078202 WO2017057242A1 (en) 2015-10-01 2016-09-26 Non-volatile semiconductor memory device

Publications (2)

Publication Number Publication Date
IL257488A true IL257488A (en) 2018-04-30
IL257488B IL257488B (en) 2020-01-30

Family

ID=56375206

Family Applications (1)

Application Number Title Priority Date Filing Date
IL257488A IL257488B (en) 2015-10-01 2018-02-12 Non-volatile semiconductor memory device

Country Status (7)

Country Link
JP (1) JP5951096B1 (en)
KR (1) KR102437353B1 (en)
CN (1) CN108076670B (en)
IL (1) IL257488B (en)
SG (1) SG11201801237PA (en)
TW (1) TWI597827B (en)
WO (1) WO2017057242A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7026537B2 (en) 2018-03-07 2022-02-28 ルネサスエレクトロニクス株式会社 Semiconductor devices and methods for manufacturing semiconductor devices
JP7450283B2 (en) * 2022-05-31 2024-03-15 株式会社フローディア Nonvolatile memory cells and nonvolatile semiconductor storage devices

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4058232B2 (en) * 2000-11-29 2008-03-05 株式会社ルネサステクノロジ Semiconductor device and IC card
CN1291491C (en) * 2002-11-12 2006-12-20 旺宏电子股份有限公司 Polysilicon self-aligning contact plug and polysilicon sharing source electrode wire and method for making the same
JP2005142354A (en) * 2003-11-06 2005-06-02 Matsushita Electric Ind Co Ltd Non-volatile semiconductor storage device, its driving method, and manufacturing method
CN101111943B (en) * 2004-11-30 2012-06-27 斯班逊有限公司 Nonvolatile storage device and manufacturing method thereof
JP4772429B2 (en) * 2005-08-29 2011-09-14 ルネサスエレクトロニクス株式会社 Semiconductor memory device
JP4171032B2 (en) * 2006-06-16 2008-10-22 株式会社東芝 Semiconductor device and manufacturing method thereof
KR20100080190A (en) * 2008-12-31 2010-07-08 주식회사 동부하이텍 Flash memory device and manufacturing method the same
US20110204374A1 (en) * 2009-01-20 2011-08-25 Sharp Kabushiki Kaisha Thin film diode and method for fabricating the same
JP2011129816A (en) * 2009-12-21 2011-06-30 Renesas Electronics Corp Semiconductor device
JP5538024B2 (en) * 2010-03-29 2014-07-02 ルネサスエレクトロニクス株式会社 Nonvolatile semiconductor memory device
KR101979299B1 (en) * 2012-12-26 2019-09-03 에스케이하이닉스 주식회사 Nonvolatile memory device and method of fabricating the same
JP6168792B2 (en) * 2013-02-28 2017-07-26 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
TW201717322A (en) 2017-05-16
KR102437353B1 (en) 2022-08-30
JP2017069478A (en) 2017-04-06
IL257488B (en) 2020-01-30
KR20180064329A (en) 2018-06-14
JP5951096B1 (en) 2016-07-13
CN108076670A (en) 2018-05-25
WO2017057242A1 (en) 2017-04-06
CN108076670B (en) 2021-12-03
TWI597827B (en) 2017-09-01
SG11201801237PA (en) 2018-03-28

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