IL161648A0 - Apparatus and methods for multi-level sensing in a memory array - Google Patents
Apparatus and methods for multi-level sensing in a memory arrayInfo
- Publication number
- IL161648A0 IL161648A0 IL16164804A IL16164804A IL161648A0 IL 161648 A0 IL161648 A0 IL 161648A0 IL 16164804 A IL16164804 A IL 16164804A IL 16164804 A IL16164804 A IL 16164804A IL 161648 A0 IL161648 A0 IL 161648A0
- Authority
- IL
- Israel
- Prior art keywords
- methods
- memory array
- level sensing
- sensing
- level
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/32—Timing circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Measurement Of Current Or Voltage (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46606303P | 2003-04-29 | 2003-04-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
IL161648A0 true IL161648A0 (en) | 2004-09-27 |
Family
ID=32990980
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL16164804A IL161648A0 (en) | 2003-04-29 | 2004-04-28 | Apparatus and methods for multi-level sensing in a memory array |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1473732A1 (xx) |
JP (1) | JP2004362749A (xx) |
CN (1) | CN1574078A (xx) |
DE (1) | DE102004021076A1 (xx) |
IL (1) | IL161648A0 (xx) |
TW (1) | TW200504761A (xx) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1699055B1 (en) | 2005-03-03 | 2010-01-06 | STMicroelectronics S.r.l. | A memory device with time-shifting based emulation of reference cells |
KR100824141B1 (ko) * | 2006-09-29 | 2008-04-21 | 주식회사 하이닉스반도체 | 반도체 메모리 소자 |
CN101800081B (zh) * | 2009-02-11 | 2012-05-02 | 北京兆易创新科技有限公司 | 一种用于mlc闪存的灵敏放大器和位线快速充电电路 |
US9830999B2 (en) | 2014-06-05 | 2017-11-28 | Micron Technology, Inc. | Comparison operations in memory |
CN112737356A (zh) * | 2020-12-25 | 2021-04-30 | 中车永济电机有限公司 | 大功率永磁直驱货运机车牵引变流器 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5218569A (en) * | 1991-02-08 | 1993-06-08 | Banks Gerald J | Electrically alterable non-volatile memory with n-bits per memory cell |
EP0740307B1 (en) * | 1995-04-28 | 2001-12-12 | STMicroelectronics S.r.l. | Sense amplifier circuit for semiconductor memory devices |
US5712815A (en) * | 1996-04-22 | 1998-01-27 | Advanced Micro Devices, Inc. | Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells |
TW367503B (en) * | 1996-11-29 | 1999-08-21 | Sanyo Electric Co | Non-volatile semiconductor device |
JP3039458B2 (ja) * | 1997-07-07 | 2000-05-08 | 日本電気株式会社 | 不揮発性半導体メモリ |
US6128226A (en) * | 1999-02-04 | 2000-10-03 | Saifun Semiconductors Ltd. | Method and apparatus for operating with a close to ground signal |
JP3348432B2 (ja) * | 1999-09-14 | 2002-11-20 | 日本電気株式会社 | 半導体装置および半導体記憶装置 |
JP3653449B2 (ja) * | 2000-06-15 | 2005-05-25 | シャープ株式会社 | 不揮発性半導体記憶装置 |
US6469929B1 (en) * | 2001-08-21 | 2002-10-22 | Tower Semiconductor Ltd. | Structure and method for high speed sensing of memory arrays |
-
2004
- 2004-04-28 IL IL16164804A patent/IL161648A0/xx unknown
- 2004-04-29 DE DE102004021076A patent/DE102004021076A1/de not_active Withdrawn
- 2004-04-29 EP EP04252507A patent/EP1473732A1/en not_active Withdrawn
- 2004-04-29 TW TW093112002A patent/TW200504761A/zh unknown
- 2004-04-29 CN CN200410071447.4A patent/CN1574078A/zh active Pending
- 2004-04-30 JP JP2004135512A patent/JP2004362749A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1473732A1 (en) | 2004-11-03 |
TW200504761A (en) | 2005-02-01 |
DE102004021076A1 (de) | 2004-11-25 |
JP2004362749A (ja) | 2004-12-24 |
CN1574078A (zh) | 2005-02-02 |
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IL161648A0 (en) | Apparatus and methods for multi-level sensing in a memory array |