IL160890A0 - Textured-grain-powder metallurgy tantalum sputter target - Google Patents

Textured-grain-powder metallurgy tantalum sputter target

Info

Publication number
IL160890A0
IL160890A0 IL16089002A IL16089002A IL160890A0 IL 160890 A0 IL160890 A0 IL 160890A0 IL 16089002 A IL16089002 A IL 16089002A IL 16089002 A IL16089002 A IL 16089002A IL 160890 A0 IL160890 A0 IL 160890A0
Authority
IL
Israel
Prior art keywords
textured
grain
powder metallurgy
sputter target
tantalum sputter
Prior art date
Application number
IL16089002A
Other languages
English (en)
Original Assignee
Praxair Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Praxair Technology Inc filed Critical Praxair Technology Inc
Publication of IL160890A0 publication Critical patent/IL160890A0/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/02—Alloys based on vanadium, niobium, or tantalum
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/02—Compacting only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • B22F2003/248—Thermal after-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
IL16089002A 2001-09-18 2002-08-21 Textured-grain-powder metallurgy tantalum sputter target IL160890A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/955,348 US6770154B2 (en) 2001-09-18 2001-09-18 Textured-grain-powder metallurgy tantalum sputter target
PCT/US2002/026480 WO2003025238A1 (en) 2001-09-18 2002-08-21 Textured-grain-powder metallurgy tantalum sputter target

Publications (1)

Publication Number Publication Date
IL160890A0 true IL160890A0 (en) 2004-08-31

Family

ID=25496703

Family Applications (2)

Application Number Title Priority Date Filing Date
IL16089002A IL160890A0 (en) 2001-09-18 2002-08-21 Textured-grain-powder metallurgy tantalum sputter target
IL160890A IL160890A (en) 2001-09-18 2004-03-15 Target for the sputtering of Tantalum's embroidered grain powder metallurgy

Family Applications After (1)

Application Number Title Priority Date Filing Date
IL160890A IL160890A (en) 2001-09-18 2004-03-15 Target for the sputtering of Tantalum's embroidered grain powder metallurgy

Country Status (7)

Country Link
US (1) US6770154B2 (ko)
EP (1) EP1427865A4 (ko)
JP (1) JP4833515B2 (ko)
KR (1) KR100903892B1 (ko)
IL (2) IL160890A0 (ko)
TW (1) TWI224147B (ko)
WO (1) WO2003025238A1 (ko)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7081148B2 (en) * 2001-09-18 2006-07-25 Praxair S.T. Technology, Inc. Textured-grain-powder metallurgy tantalum sputter target
JP4883546B2 (ja) * 2002-09-20 2012-02-22 Ｊｘ日鉱日石金属株式会社 タンタルスパッタリングターゲットの製造方法
JP4263900B2 (ja) * 2002-11-13 2009-05-13 日鉱金属株式会社 Ｔａスパッタリングターゲット及びその製造方法
WO2004090193A1 (ja) * 2003-04-01 2004-10-21 Nikko Materials Co., Ltd. タンタルスパッタリングターゲット及びその製造方法
US7228722B2 (en) * 2003-06-09 2007-06-12 Cabot Corporation Method of forming sputtering articles by multidirectional deformation
JP2007523993A (ja) * 2003-06-20 2007-08-23 キャボット　コーポレイション スパッタターゲットをバッキングプレートに結合させるための方法及び設計
CN101857950B (zh) * 2003-11-06 2012-08-08 Jx日矿日石金属株式会社 钽溅射靶
WO2005071135A2 (en) * 2004-01-08 2005-08-04 Cabot Corporation Tantalum and other metals with (110) orientation
US20080271305A1 (en) * 2005-01-19 2008-11-06 Tosoh Smd Etna, Llc Automated Sputtering Target Production
US7998287B2 (en) 2005-02-10 2011-08-16 Cabot Corporation Tantalum sputtering target and method of fabrication
WO2006117949A1 (ja) * 2005-04-28 2006-11-09 Nippon Mining & Metals Co., Ltd. スパッタリングターゲット
BRPI0611451A2 (pt) * 2005-05-05 2010-09-08 Starck H C Gmbh processo de revestimento para fabricação ou reprocessamento de alvos de metalização e anodos de raios x
WO2006117144A1 (en) 2005-05-05 2006-11-09 H.C. Starck Gmbh Method for coating a substrate surface and coated product
EP1931812B1 (en) 2005-09-12 2018-10-24 Board of Regents of the Nevada System of Higher Education, on behalf of The University of Nevada, Reno Targets for laser high-energy physics
EP1942204B1 (en) * 2005-10-04 2012-04-25 JX Nippon Mining & Metals Corporation Sputtering target
US20080078268A1 (en) * 2006-10-03 2008-04-03 H.C. Starck Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
US20080110746A1 (en) * 2006-11-09 2008-05-15 Kardokus Janine K Novel manufacturing design and processing methods and apparatus for sputtering targets
US20080145688A1 (en) 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
WO2008134516A2 (en) * 2007-04-27 2008-11-06 Honeywell International Inc. Novel manufacturing design and processing methods and apparatus for sputtering targets
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
US8250895B2 (en) * 2007-08-06 2012-08-28 H.C. Starck Inc. Methods and apparatus for controlling texture of plates and sheets by tilt rolling
KR101201577B1 (ko) 2007-08-06 2012-11-14 에이치. 씨. 스타아크 아이앤씨 향상된 조직 균일성을 가진 내화 금속판
US20110104480A1 (en) 2008-02-19 2011-05-05 Steven Malekos Targets and processes for fabricating same
WO2009107763A1 (ja) * 2008-02-29 2009-09-03 新日鉄マテリアルズ株式会社 金属系スパッタリングターゲット材
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
US8043655B2 (en) * 2008-10-06 2011-10-25 H.C. Starck, Inc. Low-energy method of manufacturing bulk metallic structures with submicron grain sizes
JP5144760B2 (ja) 2009-05-22 2013-02-13 Ｊｘ日鉱日石金属株式会社 タンタルスパッタリングターゲット
EP2465968A4 (en) 2009-08-11 2014-04-30 Jx Nippon Mining & Metals Corp TANTALE SPRAY TARGET
US8703233B2 (en) 2011-09-29 2014-04-22 H.C. Starck Inc. Methods of manufacturing large-area sputtering targets by cold spray
SG2014009997A (en) * 2011-11-30 2014-04-28 Jx Nippon Mining & Metals Corp Tantalum sputtering target and method for manufacturing same
US9859104B2 (en) 2013-03-04 2018-01-02 Jx Nippon Mining & Metals Corporation Tantalum sputtering target and production method therefor
WO2015157421A1 (en) 2014-04-11 2015-10-15 H.C. Starck Inc. High purity refractory metal sputtering targets which have a uniform random texture manufactured by hot isostatic pressing high purity refractory metal powders
US11062889B2 (en) 2017-06-26 2021-07-13 Tosoh Smd, Inc. Method of production of uniform metal plates and sputtering targets made thereby
JP7448955B2 (ja) 2018-03-05 2024-03-13 グローバル アドバンスト メタルズ ユー．エス．エー．，インコーポレイティド 球状タンタル粉末、それを含有する製品、及びその作製方法
EP3746238A1 (en) 2018-03-05 2020-12-09 Global Advanced Metals USA, Inc. Anodes containing spherical powder and capacitors
US11289276B2 (en) 2018-10-30 2022-03-29 Global Advanced Metals Japan K.K. Porous metal foil and capacitor anodes made therefrom and methods of making same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3335037A (en) 1963-12-27 1967-08-08 Gen Electric Method for producing tantalum sheet
US3497402A (en) 1966-02-03 1970-02-24 Nat Res Corp Stabilized grain-size tantalum alloy
US5590389A (en) * 1994-12-23 1996-12-31 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
US6348139B1 (en) 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
US6193821B1 (en) 1998-08-19 2001-02-27 Tosoh Smd, Inc. Fine grain tantalum sputtering target and fabrication process
US6348113B1 (en) * 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
JP2001020065A (ja) * 1999-07-07 2001-01-23 Hitachi Metals Ltd スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料
US6165413A (en) * 1999-07-08 2000-12-26 Praxair S.T. Technology, Inc. Method of making high density sputtering targets
US6261337B1 (en) 1999-08-19 2001-07-17 Prabhat Kumar Low oxygen refractory metal powder for powder metallurgy
US6331233B1 (en) 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture

Also Published As

Publication number Publication date
KR100903892B1 (ko) 2009-06-19
IL160890A (en) 2007-03-08
TWI224147B (en) 2004-11-21
WO2003025238A1 (en) 2003-03-27
KR20040029485A (ko) 2004-04-06
JP4833515B2 (ja) 2011-12-07
EP1427865A4 (en) 2005-09-14
EP1427865A1 (en) 2004-06-16
JP2005503482A (ja) 2005-02-03
US20030089429A1 (en) 2003-05-15
US6770154B2 (en) 2004-08-03

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