IL158094A0 - Deposition method, deposition apparatus, insulating film and semiconductor integrated circuit - Google Patents

Deposition method, deposition apparatus, insulating film and semiconductor integrated circuit

Info

Publication number
IL158094A0
IL158094A0 IL15809402A IL15809402A IL158094A0 IL 158094 A0 IL158094 A0 IL 158094A0 IL 15809402 A IL15809402 A IL 15809402A IL 15809402 A IL15809402 A IL 15809402A IL 158094 A0 IL158094 A0 IL 158094A0
Authority
IL
Israel
Prior art keywords
insulating film
integrated circuit
semiconductor integrated
deposition
deposition method
Prior art date
Application number
IL15809402A
Other languages
English (en)
Original Assignee
Watanabe M & Co Ltd
Takashi Sugino
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Watanabe M & Co Ltd, Takashi Sugino filed Critical Watanabe M & Co Ltd
Publication of IL158094A0 publication Critical patent/IL158094A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/36—Carbonitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
IL15809402A 2001-03-28 2002-03-25 Deposition method, deposition apparatus, insulating film and semiconductor integrated circuit IL158094A0 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001094037 2001-03-28
JP2001203688A JP4406178B2 (ja) 2001-03-28 2001-07-04 成膜装置
PCT/JP2002/002837 WO2002080260A1 (fr) 2001-03-28 2002-03-25 Procede et dispositif de depot, couche isolante et circuit integre a semi-conducteur

Publications (1)

Publication Number Publication Date
IL158094A0 true IL158094A0 (en) 2004-03-28

Family

ID=26612436

Family Applications (1)

Application Number Title Priority Date Filing Date
IL15809402A IL158094A0 (en) 2001-03-28 2002-03-25 Deposition method, deposition apparatus, insulating film and semiconductor integrated circuit

Country Status (8)

Country Link
US (1) US20040157472A1 (ja)
EP (1) EP1376672A1 (ja)
JP (1) JP4406178B2 (ja)
KR (2) KR20080041302A (ja)
CN (1) CN1513201A (ja)
IL (1) IL158094A0 (ja)
TW (1) TWI246127B (ja)
WO (1) WO2002080260A1 (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5221840B2 (ja) * 2001-03-28 2013-06-26 株式会社渡辺商行 成膜方法並びに絶縁膜及び半導体集積回路
WO2003005432A1 (fr) * 2001-07-05 2003-01-16 Kabushiki Kaisha Watanabe Shoko Procede et appareil de formation de film a basse constante dielectrique et dispositif electronique utilisant ce film
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US8476743B2 (en) * 2011-09-09 2013-07-02 International Business Machines Corporation C-rich carbon boron nitride dielectric films for use in electronic devices
JP6538300B2 (ja) 2012-11-08 2019-07-03 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 感受性基材上にフィルムを蒸着するための方法
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
US9773643B1 (en) 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
US11830729B2 (en) * 2021-01-08 2023-11-28 Applied Materials, Inc. Low-k boron carbonitride films

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6337637A (ja) 1986-08-01 1988-02-18 Fujitsu Ltd 多層配線構造の半導体装置および製法
US5270029A (en) * 1987-02-24 1993-12-14 Semiconductor Energy Laboratory Co., Ltd. Carbon substance and its manufacturing method
JPH0499049A (ja) * 1990-08-06 1992-03-31 Kawasaki Steel Corp 半導体装置
JPH0499177A (ja) * 1990-08-06 1992-03-31 Sumitomo Electric Ind Ltd 超高圧安定相物質の気相合成法
JPWO2002069382A1 (ja) * 2001-02-28 2004-07-02 杉野　隆 固体装置およびその製造方法

Also Published As

Publication number Publication date
KR20030093275A (ko) 2003-12-06
US20040157472A1 (en) 2004-08-12
WO2002080260A9 (fr) 2003-03-13
KR20080041302A (ko) 2008-05-09
JP2002359242A (ja) 2002-12-13
KR100870172B1 (ko) 2008-11-25
TWI246127B (en) 2005-12-21
WO2002080260A1 (fr) 2002-10-10
JP4406178B2 (ja) 2010-01-27
EP1376672A1 (en) 2004-01-02
CN1513201A (zh) 2004-07-14

Similar Documents

Publication Publication Date Title
AU2854099A (en) Semiconductor device and method for manufacturing the same, circuit substrate, and electronic device
AU2003264511A1 (en) Method for forming insulating film on substrate, method for manufacturing semiconductor device and substrate-processing apparatus
EP1453083A4 (en) INSULATING FILM NITRIDING PROCESS, SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME, AND SURFACE TREATING DEVICE AND METHOD
GB2382462B (en) A circuit including a semiconductor component and an operating method for the semiconductor component
GB2416254B (en) Semiconductor integrated circuit for communication, radio-communications apparatus, and transmission starting method
EP1361614B8 (en) Semiconductor device manufacturing method
EP1422686A4 (en) METHOD FOR CONTROLLING ELECTRONIC DEVICE, ELECTRONIC DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT, AND ELECTRONIC APPARATUS
SG117412A1 (en) Semiconductor wafer dividing method
EP1544905A4 (en) ELECTRICAL SWITCHING, THIN FILM TRANSISTOR, METHOD FOR PRODUCING ELECTRICAL SWITCHING AND METHOD FOR PRODUCING A THIN FILM TRANSISTOR
SG118117A1 (en) Semiconductor device and manufacturing method thereof
SG108920A1 (en) Semiconductor integrated circuit device, production and operation method thereof
SG87829A1 (en) Semiconductor integrated circuit apparatus
SG121710A1 (en) Semiconductor device and fabrication method thereof
HK1074531A1 (en) Semiconductor device using low dielectric constantmaterial film and method of fabricating the same
EP1469509A4 (en) METHOD AND DEVICE FOR PROCESSING A SUBSTRATE AND DEVICE FOR PRODUCING A SEMICONDUCTOR CONSTRUCTION ELEMENT
EP1620894A4 (en) SUBSTRATE, MANUFACTURING METHOD AND SEMICONDUCTOR COMPONENT
GB2393325B (en) Semiconductor device and manufacturing method thereof
IL158094A0 (en) Deposition method, deposition apparatus, insulating film and semiconductor integrated circuit
EP1564793A4 (en) EXPOSURE DEVICE, EXPOSURE METHOD AND SEMICONDUCTOR COMPONENTS MANUFACTURING METHOD
GB0220079D0 (en) Semiconductor integrated circuit and its layout method
AU2001271293A1 (en) Semiconductor structure, device, circuit, and process
GB2381374B (en) Apparatus for manufacturing semiconductor device
AU2002354196A1 (en) Substrate holding apparatus, exposure apparatus, and device manufacturing method
EP1437763A4 (en) SEMICONDUCTOR MANUFACTURING DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT
EP1363333A4 (en) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME