IL157273A0 - Tantalum-silicon and niobium-silicon substrates for capacitor anodes - Google Patents
Tantalum-silicon and niobium-silicon substrates for capacitor anodesInfo
- Publication number
- IL157273A0 IL157273A0 IL15727302A IL15727302A IL157273A0 IL 157273 A0 IL157273 A0 IL 157273A0 IL 15727302 A IL15727302 A IL 15727302A IL 15727302 A IL15727302 A IL 15727302A IL 157273 A0 IL157273 A0 IL 157273A0
- Authority
- IL
- Israel
- Prior art keywords
- silicon
- niobium
- tantalum
- capacitor anodes
- substrates
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title 1
- LIZIAPBBPRPPLV-UHFFFAOYSA-N niobium silicon Chemical compound [Si].[Nb] LIZIAPBBPRPPLV-UHFFFAOYSA-N 0.000 title 1
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
- C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Powder Metallurgy (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Inorganic Insulating Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26837801P | 2001-02-12 | 2001-02-12 | |
| PCT/US2002/004073 WO2002064858A1 (en) | 2001-02-12 | 2002-02-12 | Tantalum-silicon and niobium-silicon substrates for capacitor anodes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL157273A0 true IL157273A0 (en) | 2004-02-19 |
Family
ID=23022730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL15727302A IL157273A0 (en) | 2001-02-12 | 2002-02-12 | Tantalum-silicon and niobium-silicon substrates for capacitor anodes |
Country Status (12)
| Country | Link |
|---|---|
| EP (1) | EP1370716A4 (ko) |
| JP (1) | JP2004518818A (ko) |
| KR (1) | KR20030086593A (ko) |
| CN (1) | CN1327035C (ko) |
| AU (1) | AU2002243956B2 (ko) |
| BR (1) | BR0207200A (ko) |
| CA (1) | CA2438246A1 (ko) |
| CZ (1) | CZ20032169A3 (ko) |
| IL (1) | IL157273A0 (ko) |
| MX (1) | MXPA03007171A (ko) |
| RU (1) | RU2003127948A (ko) |
| WO (1) | WO2002064858A1 (ko) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL157273A0 (en) * | 2001-02-12 | 2004-02-19 | Starck H C Inc | Tantalum-silicon and niobium-silicon substrates for capacitor anodes |
| US7811355B2 (en) | 2003-11-10 | 2010-10-12 | Showa Denko K.K. | Niobium powder for capacitor, niobium sintered body and capacitor |
| CN1913523A (zh) * | 2005-08-09 | 2007-02-14 | 华为技术有限公司 | 实现层级化虚拟私有交换业务的方法 |
| GB2450669B (en) * | 2006-05-05 | 2012-03-21 | Cabot Corp | Tantalam powder and methods of manufacturing same |
| US7852615B2 (en) * | 2008-01-22 | 2010-12-14 | Avx Corporation | Electrolytic capacitor anode treated with an organometallic compound |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1165510A (en) * | 1968-12-13 | 1969-10-01 | Standard Telephones Cables Ltd | Solid Electrolytic Capacitors |
| US4432035A (en) * | 1982-06-11 | 1984-02-14 | International Business Machines Corp. | Method of making high dielectric constant insulators and capacitors using same |
| US4859257A (en) * | 1986-01-29 | 1989-08-22 | Fansteel Inc. | Fine grained embrittlement resistant tantalum wire |
| CN1010447B (zh) * | 1987-06-17 | 1990-11-14 | 北京有色金属研究总院 | 固体电解电容器制造方法 |
| US4957541A (en) * | 1988-11-01 | 1990-09-18 | Nrc, Inc. | Capacitor grade tantalum powder |
| JP2895166B2 (ja) * | 1990-05-31 | 1999-05-24 | キヤノン株式会社 | 半導体装置の製造方法 |
| US5965942A (en) * | 1994-09-28 | 1999-10-12 | Sharp Kabushiki Kaisha | Semiconductor memory device with amorphous diffusion barrier between capacitor and plug |
| KR100240649B1 (ko) * | 1996-11-07 | 2000-02-01 | 정선종 | 삼원계 확산 방지막 형성 방법 |
| US6576069B1 (en) * | 1998-05-22 | 2003-06-10 | Cabot Corporation | Tantalum-silicon alloys and products containing the same and processes of making the same |
| JP3667531B2 (ja) * | 1998-07-07 | 2005-07-06 | 松下電器産業株式会社 | 電解コンデンサの製造方法 |
| IL157273A0 (en) * | 2001-02-12 | 2004-02-19 | Starck H C Inc | Tantalum-silicon and niobium-silicon substrates for capacitor anodes |
-
2002
- 2002-02-12 IL IL15727302A patent/IL157273A0/xx unknown
- 2002-02-12 AU AU2002243956A patent/AU2002243956B2/en not_active Expired - Fee Related
- 2002-02-12 BR BR0207200-9A patent/BR0207200A/pt not_active IP Right Cessation
- 2002-02-12 RU RU2003127948/15A patent/RU2003127948A/ru not_active Application Discontinuation
- 2002-02-12 CA CA002438246A patent/CA2438246A1/en not_active Abandoned
- 2002-02-12 EP EP02709474A patent/EP1370716A4/en not_active Withdrawn
- 2002-02-12 WO PCT/US2002/004073 patent/WO2002064858A1/en active Application Filing
- 2002-02-12 CN CNB028048768A patent/CN1327035C/zh not_active Expired - Fee Related
- 2002-02-12 KR KR10-2003-7010542A patent/KR20030086593A/ko not_active Application Discontinuation
- 2002-02-12 MX MXPA03007171A patent/MXPA03007171A/es active IP Right Grant
- 2002-02-12 CZ CZ20032169A patent/CZ20032169A3/cs unknown
- 2002-02-12 JP JP2002564166A patent/JP2004518818A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| KR20030086593A (ko) | 2003-11-10 |
| CZ20032169A3 (cs) | 2004-03-17 |
| CN1327035C (zh) | 2007-07-18 |
| EP1370716A1 (en) | 2003-12-17 |
| WO2002064858A1 (en) | 2002-08-22 |
| CA2438246A1 (en) | 2002-08-22 |
| EP1370716A4 (en) | 2007-08-08 |
| AU2002243956B2 (en) | 2007-08-02 |
| BR0207200A (pt) | 2004-01-27 |
| JP2004518818A (ja) | 2004-06-24 |
| CN1491298A (zh) | 2004-04-21 |
| MXPA03007171A (es) | 2005-02-14 |
| RU2003127948A (ru) | 2005-03-27 |
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