IL155782A0 - Vertical junction field effect semiconductor diodes - Google Patents
Vertical junction field effect semiconductor diodesInfo
- Publication number
- IL155782A0 IL155782A0 IL15578201A IL15578201A IL155782A0 IL 155782 A0 IL155782 A0 IL 155782A0 IL 15578201 A IL15578201 A IL 15578201A IL 15578201 A IL15578201 A IL 15578201A IL 155782 A0 IL155782 A0 IL 155782A0
- Authority
- IL
- Israel
- Prior art keywords
- field effect
- junction field
- semiconductor diodes
- effect semiconductor
- vertical junction
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3088—Process specially adapted to improve the resolution of the mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823468—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
- H01L29/66901—Unipolar field-effect transistors with a PN junction gate, i.e. JFET with a PN homojunction gate
- H01L29/66909—Vertical transistors, e.g. tecnetrons
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/712,449 US6580150B1 (en) | 2000-11-13 | 2000-11-13 | Vertical junction field effect semiconductor diodes |
PCT/US2001/051208 WO2002049116A2 (en) | 2000-11-13 | 2001-10-18 | Vertical junction field effect semiconductor diodes |
Publications (1)
Publication Number | Publication Date |
---|---|
IL155782A0 true IL155782A0 (en) | 2003-12-23 |
Family
ID=24862160
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL15578201A IL155782A0 (en) | 2000-11-13 | 2001-10-18 | Vertical junction field effect semiconductor diodes |
IL155782A IL155782A (en) | 2000-11-13 | 2003-05-05 | Semiconductor field diodes have a vertical simulator cost |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL155782A IL155782A (en) | 2000-11-13 | 2003-05-05 | Semiconductor field diodes have a vertical simulator cost |
Country Status (10)
Country | Link |
---|---|
US (2) | US6580150B1 (zh) |
EP (1) | EP1336203A2 (zh) |
JP (1) | JP2004517473A (zh) |
KR (1) | KR100812202B1 (zh) |
CN (1) | CN1312779C (zh) |
AU (1) | AU2002243427A1 (zh) |
CA (1) | CA2428673A1 (zh) |
IL (2) | IL155782A0 (zh) |
TW (1) | TW520570B (zh) |
WO (1) | WO2002049116A2 (zh) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6830959B2 (en) * | 2002-01-22 | 2004-12-14 | Fairchild Semiconductor Corporation | Semiconductor die package with semiconductor die having side electrical connection |
US7018095B2 (en) * | 2002-06-27 | 2006-03-28 | Intel Corporation | Circuit for sensing on-die temperature at multiple locations |
US6728275B2 (en) | 2002-09-19 | 2004-04-27 | Trw Inc. | Fault tolerant laser diode package |
US7030680B2 (en) * | 2003-02-26 | 2006-04-18 | Integrated Discrete Devices, Llc | On chip power supply |
US6894326B2 (en) * | 2003-06-25 | 2005-05-17 | International Business Machines Corporation | High-density finFET integration scheme |
US7357101B2 (en) * | 2005-11-30 | 2008-04-15 | Ford Global Technologies, Llc | Engine system for multi-fluid operation |
US7679427B2 (en) * | 2007-06-14 | 2010-03-16 | Suvolta, Inc. | Semiconductor device including a bias voltage generator |
US20090039456A1 (en) * | 2007-08-08 | 2009-02-12 | Alpha & Omega Semiconductor, Ltd | Structures and methods for forming Schottky diodes on a P-substrate or a bottom anode Schottky diode |
US7759201B2 (en) * | 2007-12-17 | 2010-07-20 | Sandisk 3D Llc | Method for fabricating pitch-doubling pillar structures |
US7981592B2 (en) * | 2008-04-11 | 2011-07-19 | Sandisk 3D Llc | Double patterning method |
US7713818B2 (en) | 2008-04-11 | 2010-05-11 | Sandisk 3D, Llc | Double patterning method |
US7786015B2 (en) * | 2008-04-28 | 2010-08-31 | Sandisk 3D Llc | Method for fabricating self-aligned complementary pillar structures and wiring |
US7732235B2 (en) * | 2008-06-30 | 2010-06-08 | Sandisk 3D Llc | Method for fabricating high density pillar structures by double patterning using positive photoresist |
US7781269B2 (en) * | 2008-06-30 | 2010-08-24 | Sandisk 3D Llc | Triangle two dimensional complementary patterning of pillars |
US8076056B2 (en) * | 2008-10-06 | 2011-12-13 | Sandisk 3D Llc | Method of making sub-resolution pillar structures using undercutting technique |
US8345720B2 (en) * | 2009-07-28 | 2013-01-01 | Northrop Grumman Systems Corp. | Laser diode ceramic cooler having circuitry for control and feedback of laser diode performance |
US8026178B2 (en) | 2010-01-12 | 2011-09-27 | Sandisk 3D Llc | Patterning method for high density pillar structures |
US7923305B1 (en) | 2010-01-12 | 2011-04-12 | Sandisk 3D Llc | Patterning method for high density pillar structures |
US8937976B2 (en) | 2012-08-15 | 2015-01-20 | Northrop Grumman Systems Corp. | Tunable system for generating an optical pulse based on a double-pass semiconductor optical amplifier |
US9026973B2 (en) * | 2013-03-14 | 2015-05-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for arbitrary metal spacing for self-aligned double patterning |
US9419148B2 (en) | 2014-03-28 | 2016-08-16 | Stmicroelectronics S.R.L. | Diode with insulated anode regions |
US20230139205A1 (en) * | 2021-11-02 | 2023-05-04 | Analog Power Conversion LLC | Semiconductor device with improved temperature uniformity |
Family Cites Families (102)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2444255A (en) | 1944-11-10 | 1948-06-29 | Gen Electric | Fabrication of rectifier cells |
DE1229093B (de) | 1963-01-23 | 1966-11-24 | Basf Ag | Verfahren zur Herstellung von Hexahydropyrimidinderivaten |
US3295030A (en) | 1963-12-18 | 1966-12-27 | Signetics Corp | Field effect transistor and method |
DE1221363B (de) | 1964-04-25 | 1966-07-21 | Telefunken Patent | Verfahren zum Verringern des Bahnwiderstands von Halbleiterbauelementen |
US3617824A (en) | 1965-07-12 | 1971-11-02 | Nippon Electric Co | Mos device with a metal-silicide gate |
US3407343A (en) | 1966-03-28 | 1968-10-22 | Ibm | Insulated-gate field effect transistor exhibiting a maximum source-drain conductance at a critical gate bias voltage |
US3458798A (en) | 1966-09-15 | 1969-07-29 | Ibm | Solid state rectifying circuit arrangements |
DE1614574A1 (de) | 1967-08-04 | 1970-10-29 | Siemens Ag | Halbleiterbauelement,insbesondere Halbleiterbauelement mit pn-UEbergang |
US3619737A (en) | 1970-05-08 | 1971-11-09 | Ibm | Planar junction-gate field-effect transistors |
US3864819A (en) | 1970-12-07 | 1975-02-11 | Hughes Aircraft Co | Method for fabricating semiconductor devices |
US3943547A (en) | 1970-12-26 | 1976-03-09 | Hitachi, Ltd. | Semiconductor device |
US3749987A (en) | 1971-08-09 | 1973-07-31 | Ibm | Semiconductor device embodying field effect transistors and schottky barrier diodes |
US3769109A (en) | 1972-04-19 | 1973-10-30 | Bell Telephone Labor Inc | PRODUCTION OF SiO{11 {11 TAPERED FILMS |
US3935586A (en) | 1972-06-29 | 1976-01-27 | U.S. Philips Corporation | Semiconductor device having a Schottky junction and method of manufacturing same |
US4019248A (en) | 1974-06-04 | 1977-04-26 | Texas Instruments Incorporated | High voltage junction semiconductor device fabrication |
FR2289051A1 (fr) | 1974-10-22 | 1976-05-21 | Ibm | Dispositifs a semi-conducteur du genre transistors a effet de champ et a porte isolee et circuits de protection cotre les surtensions |
US3988765A (en) | 1975-04-08 | 1976-10-26 | Rca Corporation | Multiple mesa semiconductor structure |
US4045250A (en) | 1975-08-04 | 1977-08-30 | Rca Corporation | Method of making a semiconductor device |
US4099260A (en) | 1976-09-20 | 1978-07-04 | Bell Telephone Laboratories, Incorporated | Bipolar read-only-memory unit having self-isolating bit-lines |
US4140560A (en) | 1977-06-20 | 1979-02-20 | International Rectifier Corporation | Process for manufacture of fast recovery diodes |
US4104086A (en) | 1977-08-15 | 1978-08-01 | International Business Machines Corporation | Method for forming isolated regions of silicon utilizing reactive ion etching |
US4153904A (en) | 1977-10-03 | 1979-05-08 | Texas Instruments Incorporated | Semiconductor device having a high breakdown voltage junction characteristic |
US4139880A (en) | 1977-10-03 | 1979-02-13 | Motorola, Inc. | CMOS polarity reversal circuit |
US4138280A (en) | 1978-02-02 | 1979-02-06 | International Rectifier Corporation | Method of manufacture of zener diodes |
US4246502A (en) | 1978-08-16 | 1981-01-20 | Mitel Corporation | Means for coupling incompatible signals to an integrated circuit and for deriving operating supply therefrom |
US4330384A (en) | 1978-10-27 | 1982-05-18 | Hitachi, Ltd. | Process for plasma etching |
US4340900A (en) | 1979-06-19 | 1982-07-20 | The United States Of America As Represented By The Secretary Of The Air Force | Mesa epitaxial diode with oxide passivated junction and plated heat sink |
US4318751A (en) | 1980-03-13 | 1982-03-09 | International Business Machines Corporation | Self-aligned process for providing an improved high performance bipolar transistor |
US4372034B1 (en) | 1981-03-26 | 1998-07-21 | Intel Corp | Process for forming contact openings through oxide layers |
US4508579A (en) | 1981-03-30 | 1985-04-02 | International Business Machines Corporation | Lateral device structures using self-aligned fabrication techniques |
US4533988A (en) | 1981-04-09 | 1985-08-06 | Telectronics Pty. Ltd. | On-chip CMOS bridge circuit |
DE3124692A1 (de) | 1981-06-24 | 1983-01-13 | Robert Bosch Gmbh, 7000 Stuttgart | "halbleitergleichrichter" |
US4423456A (en) | 1981-11-13 | 1983-12-27 | Medtronic, Inc. | Battery reversal protection |
US4403396A (en) | 1981-12-24 | 1983-09-13 | Gte Laboratories Incorporated | Semiconductor device design and process |
US5357131A (en) | 1982-03-10 | 1994-10-18 | Hitachi, Ltd. | Semiconductor memory with trench capacitor |
DE3219606A1 (de) | 1982-05-25 | 1983-12-01 | Siemens AG, 1000 Berlin und 8000 München | Schottky-leistungsdiode |
DE3219888A1 (de) | 1982-05-27 | 1983-12-01 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Planares halbleiterbauelement und verfahren zur herstellung |
US4638551A (en) | 1982-09-24 | 1987-01-27 | General Instrument Corporation | Schottky barrier device and method of manufacture |
GB2134705B (en) | 1983-01-28 | 1985-12-24 | Philips Electronic Associated | Semiconductor devices |
USH64H (en) | 1983-08-08 | 1986-05-06 | At&T Bell Laboratories | Full-wave rectifier for CMOS IC chip |
DE3334167A1 (de) | 1983-09-21 | 1985-04-04 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterdiode |
US4534826A (en) | 1983-12-29 | 1985-08-13 | Ibm Corporation | Trench etch process for dielectric isolation |
DE3435306A1 (de) | 1984-09-26 | 1986-04-03 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von laserdioden mit jutierter integrierter waermesenke |
DE3581348D1 (de) | 1984-09-28 | 1991-02-21 | Siemens Ag | Verfahren zum herstellen eines pn-uebergangs mit hoher durchbruchsspannung. |
JPS61156882A (ja) | 1984-12-28 | 1986-07-16 | Toshiba Corp | 二重拡散形絶縁ゲ−ト電界効果トランジスタ及びその製造方法 |
US4777580A (en) | 1985-01-30 | 1988-10-11 | Maxim Integrated Products | Integrated full-wave rectifier circuit |
US4742377A (en) | 1985-02-21 | 1988-05-03 | General Instrument Corporation | Schottky barrier device with doped composite guard ring |
US4579626A (en) | 1985-02-28 | 1986-04-01 | Rca Corporation | Method of making a charge-coupled device imager |
US4703554A (en) * | 1985-04-04 | 1987-11-03 | Texas Instruments Incorporated | Technique for fabricating a sidewall base contact with extrinsic base-on-insulator |
JPS62119972A (ja) | 1985-11-19 | 1987-06-01 | Fujitsu Ltd | 接合型トランジスタ |
US4745395A (en) | 1986-01-27 | 1988-05-17 | General Datacomm, Inc. | Precision current rectifier for rectifying input current |
US4666556A (en) | 1986-05-12 | 1987-05-19 | International Business Machines Corporation | Trench sidewall isolation by polysilicon oxidation |
DE3774036D1 (de) | 1986-08-11 | 1991-11-28 | Siemens Ag | Verfahren zur stabilisierung von pn-uebergaengen. |
US4875151A (en) | 1986-08-11 | 1989-10-17 | Ncr Corporation | Two transistor full wave rectifier |
JPH0693498B2 (ja) | 1986-08-25 | 1994-11-16 | 日立超エル・エス・アイエンジニアリング株式会社 | 半導体集積回路装置 |
EP0262356B1 (de) | 1986-09-30 | 1993-03-31 | Siemens Aktiengesellschaft | Verfahren zur Herstellung eines pn-Übergangs hoher Spannungsfestigkeit |
US5338693A (en) | 1987-01-08 | 1994-08-16 | International Rectifier Corporation | Process for manufacture of radiation resistant power MOSFET and radiation resistant power MOSFET |
JPH0744213B2 (ja) | 1987-02-23 | 1995-05-15 | 松下電子工業株式会社 | 半導体装置の製造方法 |
US4822601A (en) | 1987-03-13 | 1989-04-18 | R.I.T.A. Corporation | Cosmetic base composition with therapeutic properties |
US4811065A (en) | 1987-06-11 | 1989-03-07 | Siliconix Incorporated | Power DMOS transistor with high speed body diode |
US4857985A (en) | 1987-08-31 | 1989-08-15 | National Semiconductor Corporation | MOS IC reverse battery protection |
EP0311816A1 (de) | 1987-10-15 | 1989-04-19 | BBC Brown Boveri AG | Halbleiterbauelement und Verfahren zu dessen Herstellung |
US4822757A (en) | 1987-11-10 | 1989-04-18 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
US4903189A (en) | 1988-04-27 | 1990-02-20 | General Electric Company | Low noise, high frequency synchronous rectifier |
IT1225636B (it) * | 1988-12-15 | 1990-11-22 | Sgs Thomson Microelectronics | Metodo di scavo con profilo di fondo arrotondato per strutture di isolamento incassate nel silicio |
US4900692A (en) | 1989-04-24 | 1990-02-13 | Motorola, Inc. | Method of forming an oxide liner and active area mask for selective epitaxial growth in an isolation trench |
US4927772A (en) | 1989-05-30 | 1990-05-22 | General Electric Company | Method of making high breakdown voltage semiconductor device |
US4974050A (en) | 1989-05-30 | 1990-11-27 | Motorola Inc. | High voltage semiconductor device and method |
JPH0750791B2 (ja) * | 1989-09-20 | 1995-05-31 | 株式会社日立製作所 | 半導体整流ダイオード及びそれを使つた電源装置並びに電子計算機 |
US5038266A (en) | 1990-01-02 | 1991-08-06 | General Electric Company | High efficiency, regulated DC supply |
JP2730271B2 (ja) | 1990-03-07 | 1998-03-25 | 住友電気工業株式会社 | 半導体装置 |
US5225376A (en) | 1990-05-02 | 1993-07-06 | Nec Electronics, Inc. | Polysilicon taper process using spin-on glass |
JPH0429372A (ja) | 1990-05-24 | 1992-01-31 | Mitsubishi Electric Corp | 半導体光検出装置 |
JP2682202B2 (ja) | 1990-06-08 | 1997-11-26 | 日本電気株式会社 | 電界効果トランジスタを用いた整流回路 |
US5184198A (en) | 1990-08-15 | 1993-02-02 | Solid State Devices, Inc. | Special geometry Schottky diode |
US5109256A (en) | 1990-08-17 | 1992-04-28 | National Semiconductor Corporation | Schottky barrier diodes and Schottky barrier diode-clamped transistors and method of fabrication |
JP3074736B2 (ja) | 1990-12-28 | 2000-08-07 | 富士電機株式会社 | 半導体装置 |
US5268833A (en) | 1991-05-14 | 1993-12-07 | U.S. Philips Corporation | Rectifier circuit including FETs of the same conductivity type |
US5254869A (en) | 1991-06-28 | 1993-10-19 | Linear Technology Corporation | Aluminum alloy/silicon chromium sandwich schottky diode |
FR2679068B1 (fr) | 1991-07-10 | 1997-04-25 | France Telecom | Procede de fabrication d'un transistor a effet de champ vertical, et transistor obtenu par ce procede. |
JP2858383B2 (ja) | 1991-10-14 | 1999-02-17 | 株式会社デンソー | 半導体装置の製造方法 |
WO1993019490A1 (en) | 1992-03-23 | 1993-09-30 | Rohm Co., Ltd. | Voltage regulating diode |
US5510641A (en) | 1992-06-01 | 1996-04-23 | University Of Washington | Majority carrier power diode |
US5258640A (en) | 1992-09-02 | 1993-11-02 | International Business Machines Corporation | Gate controlled Schottky barrier diode |
JP2809253B2 (ja) | 1992-10-02 | 1998-10-08 | 富士電機株式会社 | 注入制御型ショットキーバリア整流素子 |
US5506421A (en) | 1992-11-24 | 1996-04-09 | Cree Research, Inc. | Power MOSFET in silicon carbide |
US5396087A (en) | 1992-12-14 | 1995-03-07 | North Carolina State University | Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up |
JP3260197B2 (ja) | 1993-02-16 | 2002-02-25 | 株式会社鷹山 | 加算回路 |
US5365102A (en) | 1993-07-06 | 1994-11-15 | North Carolina State University | Schottky barrier rectifier with MOS trench |
US5479626A (en) | 1993-07-26 | 1995-12-26 | Rockwell International Corporation | Signal processor contexts with elemental and reserved group addressing |
US5426325A (en) | 1993-08-04 | 1995-06-20 | Siliconix Incorporated | Metal crossover in high voltage IC with graduated doping control |
US5780324A (en) | 1994-03-30 | 1998-07-14 | Denso Corporation | Method of manufacturing a vertical semiconductor device |
US5801509A (en) | 1995-01-27 | 1998-09-01 | Kabushiki Kaisha Yaskawa Denki | Method of starting a permanent-magnet synchronous motor equipped with angular position detector and apparatus for controlling such motor |
US5536676A (en) | 1995-04-03 | 1996-07-16 | National Science Council | Low temperature formation of silicided shallow junctions by ion implantation into thin silicon films |
KR0154702B1 (ko) | 1995-06-09 | 1998-10-15 | 김광호 | 항복전압을 향상시킨 다이오드 제조 방법 |
US5818084A (en) | 1996-05-15 | 1998-10-06 | Siliconix Incorporated | Pseudo-Schottky diode |
US5886383A (en) | 1997-01-10 | 1999-03-23 | International Rectifier Corporation | Integrated schottky diode and mosgated device |
US5825079A (en) | 1997-01-23 | 1998-10-20 | Luminous Intent, Inc. | Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage |
US5898982A (en) | 1997-05-30 | 1999-05-04 | Luminous Intent, Inc. | Thin film capacitors |
KR100263912B1 (ko) * | 1998-05-20 | 2000-09-01 | 김덕중 | 반도체 소자의 다이오드 및 그 제조방법 |
US6225176B1 (en) * | 1999-02-22 | 2001-05-01 | Advanced Micro Devices, Inc. | Step drain and source junction formation |
US6186408B1 (en) | 1999-05-28 | 2001-02-13 | Advanced Power Devices, Inc. | High cell density power rectifier |
-
2000
- 2000-11-13 US US09/712,449 patent/US6580150B1/en not_active Expired - Fee Related
-
2001
- 2001-10-18 CN CNB01821925XA patent/CN1312779C/zh not_active Expired - Fee Related
- 2001-10-18 CA CA002428673A patent/CA2428673A1/en not_active Abandoned
- 2001-10-18 WO PCT/US2001/051208 patent/WO2002049116A2/en not_active Application Discontinuation
- 2001-10-18 AU AU2002243427A patent/AU2002243427A1/en not_active Abandoned
- 2001-10-18 IL IL15578201A patent/IL155782A0/xx active IP Right Grant
- 2001-10-18 KR KR1020037006440A patent/KR100812202B1/ko not_active IP Right Cessation
- 2001-10-18 EP EP01989323A patent/EP1336203A2/en not_active Withdrawn
- 2001-10-18 JP JP2002550321A patent/JP2004517473A/ja active Pending
- 2001-10-22 US US09/982,855 patent/US6855614B2/en not_active Expired - Fee Related
- 2001-11-05 TW TW090127405A patent/TW520570B/zh not_active IP Right Cessation
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2003
- 2003-05-05 IL IL155782A patent/IL155782A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
IL155782A (en) | 2007-12-03 |
US20020066939A1 (en) | 2002-06-06 |
JP2004517473A (ja) | 2004-06-10 |
US6855614B2 (en) | 2005-02-15 |
CN1312779C (zh) | 2007-04-25 |
US6580150B1 (en) | 2003-06-17 |
TW520570B (en) | 2003-02-11 |
EP1336203A2 (en) | 2003-08-20 |
CA2428673A1 (en) | 2002-06-20 |
WO2002049116A2 (en) | 2002-06-20 |
WO2002049116A3 (en) | 2002-11-28 |
CN1531756A (zh) | 2004-09-22 |
KR100812202B1 (ko) | 2008-03-13 |
KR20030070894A (ko) | 2003-09-02 |
AU2002243427A1 (en) | 2002-06-24 |
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