IL155214A0 - Tantalum and tantalum nitride powder mixtures for electrolytic capacitor substrates - Google Patents

Tantalum and tantalum nitride powder mixtures for electrolytic capacitor substrates

Info

Publication number
IL155214A0
IL155214A0 IL15521401A IL15521401A IL155214A0 IL 155214 A0 IL155214 A0 IL 155214A0 IL 15521401 A IL15521401 A IL 15521401A IL 15521401 A IL15521401 A IL 15521401A IL 155214 A0 IL155214 A0 IL 155214A0
Authority
IL
Israel
Prior art keywords
tantalum
electrolytic capacitor
nitride powder
powder mixtures
capacitor substrates
Prior art date
Application number
IL15521401A
Other languages
English (en)
Original Assignee
Starck H C Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Starck H C Inc filed Critical Starck H C Inc
Publication of IL155214A0 publication Critical patent/IL155214A0/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004Details
    • H01G9/04Electrodes or formation of dielectric layers thereon
    • H01G9/048Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052Sintered electrodes
    • H01G9/0525Powder therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004Details
    • H01G9/04Electrodes or formation of dielectric layers thereon
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C27/00Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/02Alloys based on vanadium, niobium, or tantalum
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C29/00Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C22C29/16Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on nitrides
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C32/00Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0047Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
    • C22C32/0068Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Powder Metallurgy (AREA)
  • Ceramic Products (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
IL15521401A 2000-10-24 2001-10-23 Tantalum and tantalum nitride powder mixtures for electrolytic capacitor substrates IL155214A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/695,512 US6554884B1 (en) 2000-10-24 2000-10-24 Tantalum and tantalum nitride powder mixtures for electrolytic capacitors substrates
PCT/US2001/046281 WO2002034436A1 (en) 2000-10-24 2001-10-23 Tantalum and tantalum nitride powder mixtures for electrolytic capacitors substrates

Publications (1)

Publication Number Publication Date
IL155214A0 true IL155214A0 (en) 2003-11-23

Family

ID=24793302

Family Applications (3)

Application Number Title Priority Date Filing Date
IL15521401A IL155214A0 (en) 2000-10-24 2001-10-23 Tantalum and tantalum nitride powder mixtures for electrolytic capacitor substrates
IL155214A IL155214A (en) 2000-10-24 2003-06-04 Tantalum and tantalum nitride powder mixtures for electrolytic capacitor substrates
IL173587A IL173587A0 (en) 2000-10-24 2006-02-07 Refractory metal made of a refractory metal powder and a refractory metal nitride powder, processes for its preparation and use thereof

Family Applications After (2)

Application Number Title Priority Date Filing Date
IL155214A IL155214A (en) 2000-10-24 2003-06-04 Tantalum and tantalum nitride powder mixtures for electrolytic capacitor substrates
IL173587A IL173587A0 (en) 2000-10-24 2006-02-07 Refractory metal made of a refractory metal powder and a refractory metal nitride powder, processes for its preparation and use thereof

Country Status (13)

Country Link
US (2) US6554884B1 (cs)
EP (2) EP1527834B1 (cs)
JP (1) JP4294951B2 (cs)
KR (1) KR100850386B1 (cs)
CN (1) CN1309513C (cs)
AU (1) AU2002228767A1 (cs)
CA (1) CA2425869A1 (cs)
CZ (1) CZ305289B6 (cs)
DE (2) DE60133143T2 (cs)
IL (3) IL155214A0 (cs)
MX (1) MXPA03003544A (cs)
PT (1) PT1527834E (cs)
WO (1) WO2002034436A1 (cs)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3871824B2 (ja) 1999-02-03 2007-01-24 キャボットスーパーメタル株式会社 高容量コンデンサー用タンタル粉末
JP3718412B2 (ja) * 2000-06-01 2005-11-24 キャボットスーパーメタル株式会社 ニオブまたはタンタル粉末およびその製造方法
US6554884B1 (en) 2000-10-24 2003-04-29 H.C. Starck, Inc. Tantalum and tantalum nitride powder mixtures for electrolytic capacitors substrates
WO2002093596A1 (en) * 2001-05-15 2002-11-21 Showa Denko K.K. Niobium monoxide powder, niobium monoxide sintered product and capacitor using niobium monoxide sintered product
KR101016658B1 (ko) 2001-10-01 2011-02-25 쇼와 덴코 가부시키가이샤 탄탈 소결체의 제조방법 및 콘덴서의 제조방법
ATE373312T1 (de) * 2001-12-10 2007-09-15 Showa Denko Kk Nioblegierung, gesinterter körper davon und kondensator damit
JP2003338433A (ja) * 2002-05-22 2003-11-28 Nec Tokin Corp 固体電解コンデンサ用の陽極体、その製造方法及び固体電解コンデンサ
US6965510B1 (en) * 2003-12-11 2005-11-15 Wilson Greatbatch Technologies, Inc. Sintered valve metal powders for implantable capacitors
US7682362B2 (en) * 2005-02-01 2010-03-23 Smith & Nephew, Inc. Lockable orientation stylus
CN100415640C (zh) * 2005-05-24 2008-09-03 株洲硬质合金集团有限公司 超细高氮氮化钽粉末及其制备方法
JP5289669B2 (ja) * 2005-06-10 2013-09-11 ローム株式会社 Nb化合物の微粉末の製造方法、Nb化合物の微粉末を用いた固体電解コンデンサの製造方法
FR2894597B1 (fr) * 2005-12-12 2008-04-11 Ceramique Plastique Sa Ebauche massive pour piece mecanique, en materiau ceramique fritte et procede de fabrication d'une telle ebauche
CZ306436B6 (cs) * 2006-05-05 2017-01-25 Cabot Corporation Tantalový prášek a způsob jeho výroby a anoda elektrolytického kondenzátoru
GB0622463D0 (en) * 2006-11-10 2006-12-20 Avx Ltd Powder modification in the manufacture of solid state capacitor anodes
US20080144257A1 (en) * 2006-12-18 2008-06-19 Yuri Freeman Anodes for electrolytic capacitors with high volumetric efficiency
US7731893B2 (en) * 2006-12-18 2010-06-08 Kemet Electronics Corporation Method for making anodes for electrolytic capacitor with high volumetric efficiency
KR20080085294A (ko) * 2007-03-19 2008-09-24 삼성전기주식회사 탄탈 콘덴서 제조방법
KR20080085293A (ko) * 2007-03-19 2008-09-24 삼성전기주식회사 탄탈 콘덴서 제조방법
US20090279233A1 (en) * 2008-05-12 2009-11-12 Yuri Freeman High volumetric efficiency anodes for electrolytic capacitors
DE102011109756A1 (de) * 2011-08-09 2013-02-14 H.C. Starck Gmbh Verfahren zur Herstellung von Elektrolytkondensatoren aus Ventilmetallpulvern
US8349030B1 (en) 2011-09-21 2013-01-08 Kemet Electronics Corporation Method for making anodes for high voltage electrolytic capacitors with high volumetric efficiency and stable D.C. leakage
USRE48439E1 (en) 2013-09-06 2021-02-16 Greatbatch Ltd. High voltage tantalum anode and method of manufacture
US9312075B1 (en) 2013-09-06 2016-04-12 Greatbatch Ltd. High voltage tantalum anode and method of manufacture
MX380446B (es) 2013-12-10 2025-03-12 Ningxia Orient Tantalum Ind Co Ltd Método para la preparación de polvo de tantalio de grado condensador con alto contenido de nitrógeno, el polvo de tantalio de grado condensador preparado a través del mismo, y el ánodo y el condensador preparados a partir del polvo de tantalio.
JP7542197B2 (ja) * 2021-01-28 2024-08-30 パナソニックIpマネジメント株式会社 電解コンデンサおよびその製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2218633B1 (cs) * 1973-02-19 1977-07-22 Lignes Telegraph Telephon
US3825802A (en) * 1973-03-12 1974-07-23 Western Electric Co Solid capacitor
DE2610224C2 (de) * 1976-03-11 1983-01-05 Fa. Hermann C. Starck Berlin, 1000 Berlin Verfahren zur Herstellung von porösen Anodenkörpern durch Pressen und Sintern von Pulvern aus Ventilmetallen
JPS5349254A (en) 1976-10-15 1978-05-04 Fujitsu Ltd Method of manufacturing tantalum nitride electrolytic capacitor
US4544403A (en) 1984-11-30 1985-10-01 Fansteel Inc. High charge, low leakage tantalum powders
US5448447A (en) * 1993-04-26 1995-09-05 Cabot Corporation Process for making an improved tantalum powder and high capacitance low leakage electrode made therefrom
EP0665302B1 (en) * 1994-01-26 2000-05-03 H.C. Starck, INC. Nitriding tantalum powder
US5825611A (en) * 1997-01-29 1998-10-20 Vishay Sprague, Inc. Doped sintered tantalum pellets with nitrogen in a capacitor
US6185090B1 (en) * 1997-01-29 2001-02-06 Vishay Sprague, Inc. Method for doping sintered tantalum and niobium pellets with nitrogen
JP3254163B2 (ja) * 1997-02-28 2002-02-04 昭和電工株式会社 コンデンサ
US6051044A (en) * 1998-05-04 2000-04-18 Cabot Corporation Nitrided niobium powders and niobium electrolytic capacitors
JP3196832B2 (ja) * 1998-05-15 2001-08-06 日本電気株式会社 固体電解コンデンサ及びその製造方法
KR100650621B1 (ko) 1999-02-16 2006-11-27 쇼와 덴코 가부시키가이샤 니오브분말, 니오브소결체, 그 소결체를 사용한 축전지 및 그 축전지의 제조방법
US6423110B1 (en) 1999-12-08 2002-07-23 Showa Denko K.K. Powder composition for capacitor and sintered body using the composition, and capacitor using the sintered body
US6432161B1 (en) 2000-02-08 2002-08-13 Cabot Supermetals K.K. Nitrogen-containing metal powder, production process thereof, and porous sintered body and solid electrolytic capacitor using the metal powder
BR0108905A (pt) 2000-03-01 2003-03-18 Cabot Corp Metais nitrificados para válvula e processos para fabricação dos mesmos
US6214271B1 (en) 2000-05-26 2001-04-10 Kemet Electronics Corporation Thermal treatment process for valve metal nitride electrolytic capacitors having manganese oxide cathodes
US6554884B1 (en) 2000-10-24 2003-04-29 H.C. Starck, Inc. Tantalum and tantalum nitride powder mixtures for electrolytic capacitors substrates
US6447570B1 (en) 2000-11-30 2002-09-10 Vishay Sprague, Inc. Sintered Tantalum and Niobium capacitor pellets doped with Nitrogen, and method of making the same

Also Published As

Publication number Publication date
US6716389B2 (en) 2004-04-06
CZ20031149A3 (cs) 2003-10-15
DE60133143T2 (de) 2009-03-12
EP1527834A1 (en) 2005-05-04
EP1337371A4 (en) 2004-05-26
AU2002228767A1 (en) 2002-05-06
CN1309513C (zh) 2007-04-11
DE60133143D1 (de) 2008-04-17
CA2425869A1 (en) 2002-05-02
US20030126944A1 (en) 2003-07-10
IL173587A0 (en) 2006-07-05
IL155214A (en) 2006-08-20
US6554884B1 (en) 2003-04-29
EP1337371B1 (en) 2005-08-24
EP1527834B1 (en) 2008-03-05
JP2004524674A (ja) 2004-08-12
MXPA03003544A (es) 2004-09-10
CZ305289B6 (cs) 2015-07-22
JP4294951B2 (ja) 2009-07-15
KR100850386B1 (ko) 2008-08-04
EP1337371A1 (en) 2003-08-27
WO2002034436A1 (en) 2002-05-02
DE60112962T2 (de) 2006-05-18
KR20030051734A (ko) 2003-06-25
CN1498144A (zh) 2004-05-19
DE60112962D1 (de) 2005-09-29
PT1527834E (pt) 2008-04-23

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