AU2002228767A1 - Tantalum and tantalum nitride powder mixtures for electrolytic capacitors substrates - Google Patents

Tantalum and tantalum nitride powder mixtures for electrolytic capacitors substrates

Info

Publication number
AU2002228767A1
AU2002228767A1 AU2002228767A AU2876702A AU2002228767A1 AU 2002228767 A1 AU2002228767 A1 AU 2002228767A1 AU 2002228767 A AU2002228767 A AU 2002228767A AU 2876702 A AU2876702 A AU 2876702A AU 2002228767 A1 AU2002228767 A1 AU 2002228767A1
Authority
AU
Australia
Prior art keywords
tantalum
nitride powder
electrolytic capacitors
powder mixtures
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002228767A
Inventor
Barbara L. Cox
Terrance B. Tripp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Materion Newton Inc
Original Assignee
HC Starck Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HC Starck Inc filed Critical HC Starck Inc
Publication of AU2002228767A1 publication Critical patent/AU2002228767A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H01G9/0525—Powder therefor
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/02—Alloys based on vanadium, niobium, or tantalum
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C22C29/16—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on nitrides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
    • C22C32/0068—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Powder Metallurgy (AREA)
  • Ceramic Products (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
AU2002228767A 2000-10-24 2001-10-23 Tantalum and tantalum nitride powder mixtures for electrolytic capacitors substrates Abandoned AU2002228767A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/695,512 US6554884B1 (en) 2000-10-24 2000-10-24 Tantalum and tantalum nitride powder mixtures for electrolytic capacitors substrates
US09695512 2000-10-24
PCT/US2001/046281 WO2002034436A1 (en) 2000-10-24 2001-10-23 Tantalum and tantalum nitride powder mixtures for electrolytic capacitors substrates

Publications (1)

Publication Number Publication Date
AU2002228767A1 true AU2002228767A1 (en) 2002-05-06

Family

ID=24793302

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002228767A Abandoned AU2002228767A1 (en) 2000-10-24 2001-10-23 Tantalum and tantalum nitride powder mixtures for electrolytic capacitors substrates

Country Status (13)

Country Link
US (2) US6554884B1 (en)
EP (2) EP1527834B1 (en)
JP (1) JP4294951B2 (en)
KR (1) KR100850386B1 (en)
CN (1) CN1309513C (en)
AU (1) AU2002228767A1 (en)
CA (1) CA2425869A1 (en)
CZ (1) CZ305289B6 (en)
DE (2) DE60133143T2 (en)
IL (3) IL155214A0 (en)
MX (1) MXPA03003544A (en)
PT (1) PT1527834E (en)
WO (1) WO2002034436A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3871824B2 (en) 1999-02-03 2007-01-24 キャボットスーパーメタル株式会社 Tantalum powder for high capacity capacitors
JP3718412B2 (en) * 2000-06-01 2005-11-24 キャボットスーパーメタル株式会社 Niobium or tantalum powder and method for producing the same
US6554884B1 (en) 2000-10-24 2003-04-29 H.C. Starck, Inc. Tantalum and tantalum nitride powder mixtures for electrolytic capacitors substrates
AU2002308967B2 (en) * 2001-05-15 2007-12-06 Showa Denko K.K. Niobium monoxide powder, niobium monoxide sintered product and capacitor using niobium monoxide sintered product
EP1433187A4 (en) 2001-10-01 2007-10-24 Showa Denko Kk Tantalum sintered body and capacitor using the sintered body
KR101257278B1 (en) * 2001-12-10 2013-04-23 쇼와 덴코 가부시키가이샤 Electrode for capacitor
JP2003338433A (en) * 2002-05-22 2003-11-28 Nec Tokin Corp Solid electrolytic capacitor, anode body therefor and its manufacturing method
US6965510B1 (en) * 2003-12-11 2005-11-15 Wilson Greatbatch Technologies, Inc. Sintered valve metal powders for implantable capacitors
US7682362B2 (en) * 2005-02-01 2010-03-23 Smith & Nephew, Inc. Lockable orientation stylus
CN100415640C (en) * 2005-05-24 2008-09-03 株洲硬质合金集团有限公司 Ultra-fine high-nitrogen tantalum nitride powder and its preparation method
JP5289669B2 (en) * 2005-06-10 2013-09-11 ローム株式会社 Method for producing fine powder of Nb compound, method for producing solid electrolytic capacitor using fine powder of Nb compound
FR2894597B1 (en) * 2005-12-12 2008-04-11 Ceramique Plastique Sa MASSIVE MECHANICAL PIECE, IN FRITTE CERAMIC MATERIAL, AND METHOD FOR MANUFACTURING SUCH A BRAKE
JP2009536266A (en) * 2006-05-05 2009-10-08 キャボット コーポレイション Tantalum powder and method for producing the same
GB0622463D0 (en) * 2006-11-10 2006-12-20 Avx Ltd Powder modification in the manufacture of solid state capacitor anodes
US7731893B2 (en) * 2006-12-18 2010-06-08 Kemet Electronics Corporation Method for making anodes for electrolytic capacitor with high volumetric efficiency
US20080144257A1 (en) * 2006-12-18 2008-06-19 Yuri Freeman Anodes for electrolytic capacitors with high volumetric efficiency
KR20080085293A (en) * 2007-03-19 2008-09-24 삼성전기주식회사 Manufacturing method of tantal condenser
KR20080085294A (en) * 2007-03-19 2008-09-24 삼성전기주식회사 Manufacturing method of tantal condenser
US20090279233A1 (en) * 2008-05-12 2009-11-12 Yuri Freeman High volumetric efficiency anodes for electrolytic capacitors
DE102011109756A1 (en) * 2011-08-09 2013-02-14 H.C. Starck Gmbh Process for the preparation of electrolytic capacitors made of valve metal powders
US8349030B1 (en) 2011-09-21 2013-01-08 Kemet Electronics Corporation Method for making anodes for high voltage electrolytic capacitors with high volumetric efficiency and stable D.C. leakage
US9312075B1 (en) 2013-09-06 2016-04-12 Greatbatch Ltd. High voltage tantalum anode and method of manufacture
USRE48439E1 (en) 2013-09-06 2021-02-16 Greatbatch Ltd. High voltage tantalum anode and method of manufacture
MX2015013587A (en) 2013-12-10 2016-02-05 Ningxia Orient Tantalum Ind Co Method for preparing capacitor-grade tantalum powder with high nitrogen content, capacitor-grade tantalum powder prepared thereby, and anode and capacitor prepared from tantalum powder.

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2218633B1 (en) * 1973-02-19 1977-07-22 Lignes Telegraph Telephon
US3825802A (en) * 1973-03-12 1974-07-23 Western Electric Co Solid capacitor
DE2610224C2 (en) * 1976-03-11 1983-01-05 Fa. Hermann C. Starck Berlin, 1000 Berlin Process for the production of porous anode bodies by pressing and sintering powders made from valve metals
JPS5349254A (en) 1976-10-15 1978-05-04 Fujitsu Ltd Method of manufacturing tantalum nitride electrolytic capacitor
US4544403A (en) 1984-11-30 1985-10-01 Fansteel Inc. High charge, low leakage tantalum powders
US5448447A (en) * 1993-04-26 1995-09-05 Cabot Corporation Process for making an improved tantalum powder and high capacitance low leakage electrode made therefrom
EP0665302B1 (en) * 1994-01-26 2000-05-03 H.C. Starck, INC. Nitriding tantalum powder
US5825611A (en) * 1997-01-29 1998-10-20 Vishay Sprague, Inc. Doped sintered tantalum pellets with nitrogen in a capacitor
US6185090B1 (en) 1997-01-29 2001-02-06 Vishay Sprague, Inc. Method for doping sintered tantalum and niobium pellets with nitrogen
JP3254163B2 (en) * 1997-02-28 2002-02-04 昭和電工株式会社 Capacitor
US6051044A (en) * 1998-05-04 2000-04-18 Cabot Corporation Nitrided niobium powders and niobium electrolytic capacitors
JP3196832B2 (en) * 1998-05-15 2001-08-06 日本電気株式会社 Solid electrolytic capacitor and method of manufacturing the same
WO2000049633A1 (en) 1999-02-16 2000-08-24 Showa Denko K.K. Niobium powder, niobium sintered body, capacitor comprised of the sintered body, and method for manufacturing the capacitor
US6423110B1 (en) 1999-12-08 2002-07-23 Showa Denko K.K. Powder composition for capacitor and sintered body using the composition, and capacitor using the sintered body
US6432161B1 (en) 2000-02-08 2002-08-13 Cabot Supermetals K.K. Nitrogen-containing metal powder, production process thereof, and porous sintered body and solid electrolytic capacitor using the metal powder
WO2001064374A2 (en) 2000-03-01 2001-09-07 Cabot Corporation Nitrided valve metals and processes for making the same
US6214271B1 (en) 2000-05-26 2001-04-10 Kemet Electronics Corporation Thermal treatment process for valve metal nitride electrolytic capacitors having manganese oxide cathodes
US6554884B1 (en) 2000-10-24 2003-04-29 H.C. Starck, Inc. Tantalum and tantalum nitride powder mixtures for electrolytic capacitors substrates
US6447570B1 (en) 2000-11-30 2002-09-10 Vishay Sprague, Inc. Sintered Tantalum and Niobium capacitor pellets doped with Nitrogen, and method of making the same

Also Published As

Publication number Publication date
EP1337371A4 (en) 2004-05-26
DE60112962D1 (en) 2005-09-29
EP1337371A1 (en) 2003-08-27
IL155214A0 (en) 2003-11-23
PT1527834E (en) 2008-04-23
MXPA03003544A (en) 2004-09-10
CN1309513C (en) 2007-04-11
CA2425869A1 (en) 2002-05-02
US6716389B2 (en) 2004-04-06
JP2004524674A (en) 2004-08-12
KR20030051734A (en) 2003-06-25
JP4294951B2 (en) 2009-07-15
KR100850386B1 (en) 2008-08-04
EP1527834B1 (en) 2008-03-05
US6554884B1 (en) 2003-04-29
DE60133143D1 (en) 2008-04-17
WO2002034436A1 (en) 2002-05-02
CZ20031149A3 (en) 2003-10-15
EP1527834A1 (en) 2005-05-04
CN1498144A (en) 2004-05-19
US20030126944A1 (en) 2003-07-10
EP1337371B1 (en) 2005-08-24
DE60112962T2 (en) 2006-05-18
CZ305289B6 (en) 2015-07-22
IL173587A0 (en) 2006-07-05
IL155214A (en) 2006-08-20
DE60133143T2 (en) 2009-03-12

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