IL153157A0 - Device and method for plasma processing and wave retardation plate - Google Patents

Device and method for plasma processing and wave retardation plate

Info

Publication number
IL153157A0
IL153157A0 IL15315702A IL15315702A IL153157A0 IL 153157 A0 IL153157 A0 IL 153157A0 IL 15315702 A IL15315702 A IL 15315702A IL 15315702 A IL15315702 A IL 15315702A IL 153157 A0 IL153157 A0 IL 153157A0
Authority
IL
Israel
Prior art keywords
wave retardation
retardation plate
plasma processing
plate
slot
Prior art date
Application number
IL15315702A
Other languages
English (en)
Original Assignee
Tadahiro Ohmi
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tadahiro Ohmi, Tokyo Electron Ltd filed Critical Tadahiro Ohmi
Publication of IL153157A0 publication Critical patent/IL153157A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
IL15315702A 2001-03-28 2002-03-28 Device and method for plasma processing and wave retardation plate IL153157A0 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001094276 2001-03-28
JP2001340995A JP4402860B2 (ja) 2001-03-28 2001-11-06 プラズマ処理装置
PCT/JP2002/003112 WO2002080253A1 (fr) 2001-03-28 2002-03-28 Dispositif et procede de traitement par plasma, et plaque a onde lente

Publications (1)

Publication Number Publication Date
IL153157A0 true IL153157A0 (en) 2003-06-24

Family

ID=26612453

Family Applications (1)

Application Number Title Priority Date Filing Date
IL15315702A IL153157A0 (en) 2001-03-28 2002-03-28 Device and method for plasma processing and wave retardation plate

Country Status (9)

Country Link
US (2) US7083701B2 (zh)
EP (1) EP1300878B1 (zh)
JP (1) JP4402860B2 (zh)
KR (1) KR100497015B1 (zh)
CN (1) CN1217390C (zh)
AT (1) ATE320081T1 (zh)
DE (1) DE60209697T2 (zh)
IL (1) IL153157A0 (zh)
WO (1) WO2002080253A1 (zh)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040144492A1 (en) * 2001-06-01 2004-07-29 Taro Ikeda Plasma processing device
JP2004335789A (ja) * 2003-05-08 2004-11-25 Tadahiro Omi 基板処理装置のクリーニング方法
JP2005089823A (ja) * 2003-09-17 2005-04-07 Seiji Sagawa 成膜装置および成膜方法
JPWO2005055305A1 (ja) 2003-12-04 2007-06-28 東京エレクトロン株式会社 半導体基板導電層表面の清浄化方法
US7879182B2 (en) 2003-12-26 2011-02-01 Foundation For Advancement Of International Science Shower plate, plasma processing apparatus, and product manufacturing method
US20060081337A1 (en) * 2004-03-12 2006-04-20 Shinji Himori Capacitive coupling plasma processing apparatus
CN1998272A (zh) * 2004-06-25 2007-07-11 东京毅力科创株式会社 等离子体处理装置
JP4093212B2 (ja) * 2004-07-23 2008-06-04 東京エレクトロン株式会社 プラズマ処理装置
US20060037702A1 (en) * 2004-08-20 2006-02-23 Tokyo Electron Limited Plasma processing apparatus
JP4701691B2 (ja) * 2004-11-29 2011-06-15 東京エレクトロン株式会社 エッチング方法
JP4979389B2 (ja) * 2004-12-17 2012-07-18 東京エレクトロン株式会社 プラズマ処理装置
KR20060073737A (ko) * 2004-12-24 2006-06-29 삼성전자주식회사 플라즈마 장치
JP2006294422A (ja) * 2005-04-11 2006-10-26 Tokyo Electron Ltd プラズマ処理装置およびスロットアンテナおよびプラズマ処理方法
JP4664119B2 (ja) * 2005-05-17 2011-04-06 東京エレクトロン株式会社 プラズマ処理装置
WO2006132957A2 (en) * 2005-06-07 2006-12-14 University Of Florida Research Foundation, Inc. Integrated electronic circuitry and heat sink
US8709162B2 (en) * 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support
US7842135B2 (en) * 2006-01-09 2010-11-30 Aixtron Ag Equipment innovations for nano-technology aquipment, especially for plasma growth chambers of carbon nanotube and nanowire
KR101012910B1 (ko) * 2006-02-28 2011-02-08 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 그것에 이용하는 기판 가열 기구
JP2007250426A (ja) * 2006-03-17 2007-09-27 Sharp Corp プラズマ処理装置の電極構造およびこれを備えたプラズマ処理装置
US7485827B2 (en) 2006-07-21 2009-02-03 Alter S.R.L. Plasma generator
JP4944198B2 (ja) * 2007-06-11 2012-05-30 東京エレクトロン株式会社 プラズマ処理装置および処理方法
JP4931716B2 (ja) * 2007-07-18 2012-05-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ生成室
JP2009152265A (ja) * 2007-12-19 2009-07-09 Tohoku Univ 光電変換素子製造装置及び方法、並びに光電変換素子
US20090238998A1 (en) 2008-03-18 2009-09-24 Applied Materials, Inc. Coaxial microwave assisted deposition and etch systems
EP2265883A1 (en) * 2008-04-14 2010-12-29 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
EP2266369B1 (en) 2008-04-14 2017-11-22 Hemlock Semiconductor Operations LLC Manufacturing apparatus for depositing a material and an electrode for use therein
JP5396745B2 (ja) * 2008-05-23 2014-01-22 東京エレクトロン株式会社 プラズマ処理装置
JP4593652B2 (ja) * 2008-06-06 2010-12-08 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
JP5213530B2 (ja) 2008-06-11 2013-06-19 東京エレクトロン株式会社 プラズマ処理装置
JP4694596B2 (ja) * 2008-06-18 2011-06-08 東京エレクトロン株式会社 マイクロ波プラズマ処理装置及びマイクロ波の給電方法
US8242405B2 (en) * 2008-07-15 2012-08-14 Tokyo Electron Limited Microwave plasma processing apparatus and method for producing cooling jacket
US8147648B2 (en) * 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
JP2010074154A (ja) * 2008-08-22 2010-04-02 Tokyo Electron Ltd マイクロ波導入機構、マイクロ波プラズマ源およびマイクロ波プラズマ処理装置
JP2010118549A (ja) * 2008-11-13 2010-05-27 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置
JP5478058B2 (ja) * 2008-12-09 2014-04-23 国立大学法人東北大学 プラズマ処理装置
JP5189999B2 (ja) * 2009-01-29 2013-04-24 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、及びマイクロ波プラズマ処理装置のマイクロ波給電方法
JP2010177065A (ja) * 2009-01-30 2010-08-12 Tokyo Electron Ltd マイクロ波プラズマ処理装置、マイクロ波プラズマ処理装置用のスロット板付き誘電体板及びその製造方法
JP5461040B2 (ja) * 2009-03-23 2014-04-02 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
WO2011055644A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8597462B2 (en) 2010-05-21 2013-12-03 Lam Research Corporation Movable chamber liner plasma confinement screen combination for plasma processing apparatuses
CN103003924B (zh) * 2010-06-28 2015-07-08 东京毅力科创株式会社 等离子体处理装置及方法
US9543123B2 (en) * 2011-03-31 2017-01-10 Tokyo Electronics Limited Plasma processing apparatus and plasma generation antenna
JP4918168B1 (ja) * 2011-03-31 2012-04-18 三井造船株式会社 誘導加熱装置
JP4980475B1 (ja) * 2011-03-31 2012-07-18 三井造船株式会社 誘導加熱装置
JP5005120B1 (ja) * 2012-01-26 2012-08-22 三井造船株式会社 誘導加熱方法
US20140263179A1 (en) * 2013-03-15 2014-09-18 Lam Research Corporation Tuning system and method for plasma-based substrate processing systems
JP2015018687A (ja) * 2013-07-10 2015-01-29 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、スロットアンテナ及び半導体装置
JP2015018686A (ja) * 2013-07-10 2015-01-29 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、スロットアンテナ及び半導体装置
KR102278075B1 (ko) * 2014-05-30 2021-07-19 세메스 주식회사 유전판 및 이를 포함하는 기판 처리 장치
EP3064765A1 (de) * 2015-03-03 2016-09-07 MWI Micro Wave Ignition AG Verbrennungsmotor
JP6478748B2 (ja) * 2015-03-24 2019-03-06 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置
WO2016178674A1 (en) * 2015-05-06 2016-11-10 Reyes Armando Portfolio with integrated computer and accessory pockets
JP6509049B2 (ja) * 2015-06-05 2019-05-08 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置
JP6844937B2 (ja) 2019-02-13 2021-03-17 東芝三菱電機産業システム株式会社 活性ガス生成装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5698036A (en) * 1995-05-26 1997-12-16 Tokyo Electron Limited Plasma processing apparatus
JPH0963793A (ja) 1995-08-25 1997-03-07 Tokyo Electron Ltd プラズマ処理装置
JP3549739B2 (ja) * 1998-08-27 2004-08-04 忠弘 大見 プラズマ処理装置
JP3496560B2 (ja) * 1999-03-12 2004-02-16 東京エレクトロン株式会社 プラズマ処理装置
JP4053173B2 (ja) * 1999-03-29 2008-02-27 東京エレクトロン株式会社 マイクロ波プラズマ処理装置及び方法
US6388632B1 (en) * 1999-03-30 2002-05-14 Rohm Co., Ltd. Slot antenna used for plasma surface processing apparatus
JP2001203098A (ja) 2000-01-18 2001-07-27 Rohm Co Ltd 半導体基板用プラズマ表面処理装置におけるラジアルラインスロットアンテナの構造
JP2000286240A (ja) 1999-03-30 2000-10-13 Rohm Co Ltd 半導体基板用プラズマ表面処理装置におけるラジアルラインスロットアンテナの構造
JP2000286237A (ja) * 1999-03-30 2000-10-13 Rohm Co Ltd 半導体基板用プラズマ表面処理装置におけるラジアルラインスロットアンテナの構造
WO2000074127A1 (fr) 1999-05-26 2000-12-07 Tokyo Electron Limited Dispositif de traitement au plasma
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
AU1606101A (en) * 1999-11-15 2001-05-30 Lam Research Corporation Materials and gas chemistries for processing systems

Also Published As

Publication number Publication date
DE60209697D1 (de) 2006-05-04
US20060231208A1 (en) 2006-10-19
CN1217390C (zh) 2005-08-31
KR20030004429A (ko) 2003-01-14
DE60209697T2 (de) 2006-11-09
ATE320081T1 (de) 2006-03-15
US7083701B2 (en) 2006-08-01
KR100497015B1 (ko) 2005-06-23
US20040134613A1 (en) 2004-07-15
EP1300878B1 (en) 2006-03-08
JP4402860B2 (ja) 2010-01-20
CN1460288A (zh) 2003-12-03
EP1300878A1 (en) 2003-04-09
EP1300878A4 (en) 2004-08-25
WO2002080253A1 (fr) 2002-10-10
JP2002355550A (ja) 2002-12-10

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Legal Events

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FF Patent granted
KB Patent renewed
MM9K Patent not in force due to non-payment of renewal fees