IL142509A0 - Apparatus for performing wavelength-conversion using phosphors with light emitting diodes - Google Patents
Apparatus for performing wavelength-conversion using phosphors with light emitting diodesInfo
- Publication number
- IL142509A0 IL142509A0 IL14250999A IL14250999A IL142509A0 IL 142509 A0 IL142509 A0 IL 142509A0 IL 14250999 A IL14250999 A IL 14250999A IL 14250999 A IL14250999 A IL 14250999A IL 142509 A0 IL142509 A0 IL 142509A0
- Authority
- IL
- Israel
- Prior art keywords
- phosphors
- conversion
- light emitting
- emitting diodes
- performing wavelength
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10505698P | 1998-10-21 | 1998-10-21 | |
US09/420,905 US6366018B1 (en) | 1998-10-21 | 1999-10-20 | Apparatus for performing wavelength-conversion using phosphors with light emitting diodes |
PCT/US1999/024902 WO2000024024A1 (en) | 1998-10-21 | 1999-10-21 | Apparatus for performing wavelength-conversion using phosphors with light emitting diodes |
Publications (1)
Publication Number | Publication Date |
---|---|
IL142509A0 true IL142509A0 (en) | 2002-03-10 |
Family
ID=26802207
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL14250999A IL142509A0 (en) | 1998-10-21 | 1999-10-21 | Apparatus for performing wavelength-conversion using phosphors with light emitting diodes |
Country Status (9)
Country | Link |
---|---|
US (1) | US6366018B1 (ko) |
EP (1) | EP1141990A4 (ko) |
JP (2) | JP2002528890A (ko) |
KR (1) | KR100629042B1 (ko) |
CN (1) | CN1324494A (ko) |
AU (1) | AU1451000A (ko) |
CA (1) | CA2347627C (ko) |
IL (1) | IL142509A0 (ko) |
WO (1) | WO2000024024A1 (ko) |
Families Citing this family (65)
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DE60143152D1 (de) | 2000-06-29 | 2010-11-11 | Koninkl Philips Electronics Nv | Optoelektrisches element |
US6642652B2 (en) | 2001-06-11 | 2003-11-04 | Lumileds Lighting U.S., Llc | Phosphor-converted light emitting device |
US6576488B2 (en) * | 2001-06-11 | 2003-06-10 | Lumileds Lighting U.S., Llc | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor |
US6660928B1 (en) | 2002-04-02 | 2003-12-09 | Essential Research, Inc. | Multi-junction photovoltaic cell |
JP2004047748A (ja) * | 2002-07-12 | 2004-02-12 | Stanley Electric Co Ltd | 発光ダイオード |
KR100499129B1 (ko) | 2002-09-02 | 2005-07-04 | 삼성전기주식회사 | 발광 다이오드 및 그 제조방법 |
TW565957B (en) * | 2002-12-13 | 2003-12-11 | Ind Tech Res Inst | Light-emitting diode and the manufacturing method thereof |
US7210977B2 (en) | 2003-01-27 | 2007-05-01 | 3M Innovative Properties Comapny | Phosphor based light source component and method of making |
US7312560B2 (en) * | 2003-01-27 | 2007-12-25 | 3M Innovative Properties | Phosphor based light sources having a non-planar long pass reflector and method of making |
US7245072B2 (en) * | 2003-01-27 | 2007-07-17 | 3M Innovative Properties Company | Phosphor based light sources having a polymeric long pass reflector |
US20040145312A1 (en) * | 2003-01-27 | 2004-07-29 | 3M Innovative Properties Company | Phosphor based light source having a flexible short pass reflector |
US7118438B2 (en) * | 2003-01-27 | 2006-10-10 | 3M Innovative Properties Company | Methods of making phosphor based light sources having an interference reflector |
US7157839B2 (en) | 2003-01-27 | 2007-01-02 | 3M Innovative Properties Company | Phosphor based light sources utilizing total internal reflection |
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US7091661B2 (en) * | 2003-01-27 | 2006-08-15 | 3M Innovative Properties Company | Phosphor based light sources having a reflective polarizer |
US7091653B2 (en) | 2003-01-27 | 2006-08-15 | 3M Innovative Properties Company | Phosphor based light sources having a non-planar long pass reflector |
US7368179B2 (en) * | 2003-04-21 | 2008-05-06 | Sarnoff Corporation | Methods and devices using high efficiency alkaline earth metal thiogallate-based phosphors |
US7125501B2 (en) * | 2003-04-21 | 2006-10-24 | Sarnoff Corporation | High efficiency alkaline earth metal thiogallate-based phosphors |
US7915085B2 (en) | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
WO2005048364A1 (en) * | 2003-11-12 | 2005-05-26 | Cree, Inc. | Light emitting devices with self aligned ohmic contact and methods of fabricating same |
ATE472927T1 (de) * | 2004-06-04 | 2010-07-15 | Koninkl Philips Electronics Nv | Elektrolumineszenzstruktur und led mit einer el- struktur |
US7427366B2 (en) * | 2004-07-06 | 2008-09-23 | Sarnoff Corporation | Efficient, green-emitting phosphors, and combinations with red-emitting phosphors |
US7372198B2 (en) * | 2004-09-23 | 2008-05-13 | Cree, Inc. | Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor |
US7675079B1 (en) * | 2004-10-28 | 2010-03-09 | Kley Victor B | Diamond coating of silicon-carbide LEDs |
US7276183B2 (en) * | 2005-03-25 | 2007-10-02 | Sarnoff Corporation | Metal silicate-silica-based polymorphous phosphors and lighting devices |
US7550579B2 (en) | 2005-04-29 | 2009-06-23 | Pioneer Hi-Bred International, Inc. | Pericarp-preferred regulatory element |
US7196354B1 (en) * | 2005-09-29 | 2007-03-27 | Luminus Devices, Inc. | Wavelength-converting light-emitting devices |
US7564070B2 (en) * | 2005-11-23 | 2009-07-21 | Visteon Global Technologies, Inc. | Light emitting diode device having a shield and/or filter |
US20070125984A1 (en) * | 2005-12-01 | 2007-06-07 | Sarnoff Corporation | Phosphors protected against moisture and LED lighting devices |
US8906262B2 (en) * | 2005-12-02 | 2014-12-09 | Lightscape Materials, Inc. | Metal silicate halide phosphors and LED lighting devices using the same |
CN101605867B (zh) * | 2006-10-03 | 2013-05-08 | 渲染材料公司 | 金属硅酸盐卤化物磷光体以及使用它们的led照明器件 |
JP4481293B2 (ja) * | 2006-12-22 | 2010-06-16 | 株式会社沖データ | 発光表示装置 |
US9024349B2 (en) * | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US9159888B2 (en) * | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US8232564B2 (en) * | 2007-01-22 | 2012-07-31 | Cree, Inc. | Wafer level phosphor coating technique for warm light emitting diodes |
KR100849887B1 (ko) * | 2007-02-08 | 2008-08-04 | 주식회사 파워라이텍 | 청색칩과 형광체를 이용한 백색 발광다이오드 칩 |
US7781779B2 (en) * | 2007-05-08 | 2010-08-24 | Luminus Devices, Inc. | Light emitting devices including wavelength converting material |
JP5634003B2 (ja) * | 2007-09-29 | 2014-12-03 | 日亜化学工業株式会社 | 発光装置 |
US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
US8167674B2 (en) * | 2007-12-14 | 2012-05-01 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
US8878219B2 (en) | 2008-01-11 | 2014-11-04 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
US20090309114A1 (en) * | 2008-01-16 | 2009-12-17 | Luminus Devices, Inc. | Wavelength converting light-emitting devices and methods of making the same |
WO2010027649A1 (en) * | 2008-09-04 | 2010-03-11 | 3M Innovative Properties Company | Monochromatic light source with high aspect ratio |
CN102197499A (zh) * | 2008-09-04 | 2011-09-21 | 3M创新有限公司 | 具有改善的单色性的光源 |
JP2012502472A (ja) * | 2008-09-04 | 2012-01-26 | スリーエム イノベイティブ プロパティズ カンパニー | 単色光源 |
US8488641B2 (en) * | 2008-09-04 | 2013-07-16 | 3M Innovative Properties Company | II-VI MQW VSEL on a heat sink optically pumped by a GaN LD |
KR101154758B1 (ko) * | 2008-11-18 | 2012-06-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 이를 구비한 발광소자 패키지 |
US8426871B2 (en) * | 2009-06-19 | 2013-04-23 | Honeywell International Inc. | Phosphor converting IR LEDs |
US10546846B2 (en) | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
DE102011015726B9 (de) * | 2011-03-31 | 2023-07-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterchip, Display mit einer Mehrzahl von Halbleiterchips und Verfahren zu deren Herstellung |
DE102011080179A1 (de) * | 2011-08-01 | 2013-02-07 | Osram Ag | Wellenlängenkonversionskörper und Verfahren zu dessen Herstellung |
KR101370575B1 (ko) * | 2012-07-30 | 2014-03-07 | 주식회사 세미콘라이트 | 반도체 발광소자 |
CN103700749A (zh) * | 2012-09-28 | 2014-04-02 | 上海蓝光科技有限公司 | 一种发光二极管及其制作方法 |
JP2015056652A (ja) * | 2013-09-13 | 2015-03-23 | 株式会社東芝 | 窒化物半導体発光装置 |
CN105304060B (zh) * | 2014-07-22 | 2018-08-10 | 联想(北京)有限公司 | 一种光检测方法及可穿戴式电子设备 |
JP6397298B2 (ja) * | 2014-10-06 | 2018-09-26 | 日本放送協会 | 発光素子 |
TWI547750B (zh) * | 2014-10-13 | 2016-09-01 | 台達電子工業股份有限公司 | 光波長轉換裝置及其適用之光源系統 |
CN104393151A (zh) * | 2014-10-30 | 2015-03-04 | 大恒新纪元科技股份有限公司 | 一种提高发光效率的led芯片及其制备方法 |
JP2016134501A (ja) | 2015-01-20 | 2016-07-25 | スタンレー電気株式会社 | 半導体発光装置 |
WO2017160119A1 (ko) * | 2016-03-18 | 2017-09-21 | 엘지이노텍 주식회사 | 반도체 소자 및 이를 포함하는 표시장치 |
US10606121B2 (en) | 2016-09-12 | 2020-03-31 | Seoul Semiconductor Co., Ltd. | Display apparatus |
DE102016220915A1 (de) | 2016-10-25 | 2018-04-26 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen und optoelektronisches Halbleiterbauteil |
JP2018190830A (ja) * | 2017-05-08 | 2018-11-29 | 豊田合成株式会社 | 半導体発光装置 |
JP7248441B2 (ja) * | 2018-03-02 | 2023-03-29 | シャープ株式会社 | 画像表示素子 |
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US5962843A (en) | 1997-07-17 | 1999-10-05 | Sinor; Timothy Wayne | Night vision having an image intensifier tube, improved transmission mode photocathode for such a device, and method of making |
US5886401A (en) | 1997-09-02 | 1999-03-23 | General Electric Company | Structure and fabrication method for interconnecting light emitting diodes with metallization extending through vias in a polymer film overlying the light emitting diodes |
US5982092A (en) | 1997-10-06 | 1999-11-09 | Chen; Hsing | Light Emitting Diode planar light source with blue light or ultraviolet ray-emitting luminescent crystal with optional UV filter |
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US5959316A (en) | 1998-09-01 | 1999-09-28 | Hewlett-Packard Company | Multiple encapsulation of phosphor-LED devices |
-
1999
- 1999-10-20 US US09/420,905 patent/US6366018B1/en not_active Expired - Lifetime
- 1999-10-21 CN CN99812484A patent/CN1324494A/zh active Pending
- 1999-10-21 JP JP2000577686A patent/JP2002528890A/ja active Pending
- 1999-10-21 IL IL14250999A patent/IL142509A0/xx unknown
- 1999-10-21 WO PCT/US1999/024902 patent/WO2000024024A1/en active IP Right Grant
- 1999-10-21 CA CA002347627A patent/CA2347627C/en not_active Expired - Fee Related
- 1999-10-21 KR KR1020017004819A patent/KR100629042B1/ko not_active IP Right Cessation
- 1999-10-21 EP EP99970780A patent/EP1141990A4/en not_active Withdrawn
- 1999-10-21 AU AU14510/00A patent/AU1451000A/en not_active Abandoned
-
2010
- 2010-05-26 JP JP2010120760A patent/JP2010187028A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
CA2347627A1 (en) | 2000-04-27 |
EP1141990A1 (en) | 2001-10-10 |
KR100629042B1 (ko) | 2006-09-26 |
KR20010080203A (ko) | 2001-08-22 |
JP2010187028A (ja) | 2010-08-26 |
AU1451000A (en) | 2000-05-08 |
JP2002528890A (ja) | 2002-09-03 |
CA2347627C (en) | 2010-03-02 |
CN1324494A (zh) | 2001-11-28 |
WO2000024024A1 (en) | 2000-04-27 |
US6366018B1 (en) | 2002-04-02 |
EP1141990A4 (en) | 2005-02-09 |
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