IL141379A0 - Low capacitance dielectric layer etching using hydrogen-nitrogen plasma - Google Patents

Low capacitance dielectric layer etching using hydrogen-nitrogen plasma

Info

Publication number
IL141379A0
IL141379A0 IL14137999A IL14137999A IL141379A0 IL 141379 A0 IL141379 A0 IL 141379A0 IL 14137999 A IL14137999 A IL 14137999A IL 14137999 A IL14137999 A IL 14137999A IL 141379 A0 IL141379 A0 IL 141379A0
Authority
IL
Israel
Prior art keywords
hydrogen
dielectric layer
nitrogen plasma
layer etching
low capacitance
Prior art date
Application number
IL14137999A
Other languages
English (en)
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of IL141379A0 publication Critical patent/IL141379A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
IL14137999A 1998-08-17 1999-08-13 Low capacitance dielectric layer etching using hydrogen-nitrogen plasma IL141379A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/135,419 US6114250A (en) 1998-08-17 1998-08-17 Techniques for etching a low capacitance dielectric layer on a substrate
PCT/US1999/018518 WO2000010199A1 (en) 1998-08-17 1999-08-13 Low capacitance dielectric layer etching using hydrogen-nitrogen plasma

Publications (1)

Publication Number Publication Date
IL141379A0 true IL141379A0 (en) 2002-03-10

Family

ID=22468027

Family Applications (1)

Application Number Title Priority Date Filing Date
IL14137999A IL141379A0 (en) 1998-08-17 1999-08-13 Low capacitance dielectric layer etching using hydrogen-nitrogen plasma

Country Status (6)

Country Link
US (1) US6114250A (de)
EP (1) EP1116265A1 (de)
JP (1) JP2002522922A (de)
KR (1) KR20010079655A (de)
IL (1) IL141379A0 (de)
WO (1) WO2000010199A1 (de)

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US6696366B1 (en) 1998-08-17 2004-02-24 Lam Research Corporation Technique for etching a low capacitance dielectric layer
JP2000077410A (ja) * 1998-08-27 2000-03-14 Tokyo Ohka Kogyo Co Ltd 多層配線構造の形成方法
US6284149B1 (en) * 1998-09-18 2001-09-04 Applied Materials, Inc. High-density plasma etching of carbon-based low-k materials in a integrated circuit
US6417090B1 (en) * 1999-01-04 2002-07-09 Advanced Micro Devices, Inc. Damascene arrangement for metal interconnection using low k dielectric constant materials for etch stop layer
US6399508B1 (en) 1999-01-12 2002-06-04 Applied Materials, Inc. Method for metal etch using a dielectric hard mask
US20030089987A1 (en) * 1999-02-05 2003-05-15 Suketu A. Parikh Dual damascene misalignment tolerant techniques for vias and sacrificial etch segments
GB9904427D0 (en) 1999-02-26 1999-04-21 Trikon Holdings Ltd Method treating an insulating layer
TW415028B (en) * 1999-05-17 2000-12-11 Mosel Vitelic Inc Dual damascene process
US6465159B1 (en) * 1999-06-28 2002-10-15 Lam Research Corporation Method and apparatus for side wall passivation for organic etch
US20050022839A1 (en) * 1999-10-20 2005-02-03 Savas Stephen E. Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
US6524963B1 (en) * 1999-10-20 2003-02-25 Chartered Semiconductor Manufacturing Ltd. Method to improve etching of organic-based, low dielectric constant materials
US6426304B1 (en) * 2000-06-30 2002-07-30 Lam Research Corporation Post etch photoresist strip with hydrogen for organosilicate glass low-κ etch applications
DE10037957C1 (de) * 2000-07-27 2002-02-28 Infineon Technologies Ag Verfahren zum anisotropen Trockenätzen organischer Antireflexionsschichten
EP1195801B1 (de) * 2000-09-29 2014-01-29 Imec Verfahren zur Behandlung einer Isolierschicht mit niedriger Dielektrizitätskonstante
US6528432B1 (en) 2000-12-05 2003-03-04 Advanced Micro Devices, Inc. H2-or H2/N2-plasma treatment to prevent organic ILD degradation
US6620733B2 (en) 2001-02-12 2003-09-16 Lam Research Corporation Use of hydrocarbon addition for the elimination of micromasking during etching of organic low-k dielectrics
US6641747B1 (en) 2001-02-15 2003-11-04 Advanced Micro Devices, Inc. Method and apparatus for determining an etch endpoint
JP2002270586A (ja) * 2001-03-08 2002-09-20 Tokyo Electron Ltd 有機系絶縁膜のエッチング方法およびデュアルダマシンプロセス
US7311852B2 (en) * 2001-03-30 2007-12-25 Lam Research Corporation Method of plasma etching low-k dielectric materials
US20030003374A1 (en) * 2001-06-15 2003-01-02 Applied Materials, Inc. Etch process for photolithographic reticle manufacturing with improved etch bias
US6746961B2 (en) * 2001-06-19 2004-06-08 Lam Research Corporation Plasma etching of dielectric layer with etch profile control
US6387798B1 (en) 2001-06-25 2002-05-14 Institute Of Microelectronics Method of etching trenches for metallization of integrated circuit devices with a narrower width than the design mask profile
US6551915B2 (en) 2001-07-03 2003-04-22 Taiwan Semiconductor Manufacturing Co., Ltd. Thermal annealing/hydrogen containing plasma method for forming structurally stable low contact resistance damascene conductor structure
US7183201B2 (en) * 2001-07-23 2007-02-27 Applied Materials, Inc. Selective etching of organosilicate films over silicon oxide stop etch layers
US6696222B2 (en) * 2001-07-24 2004-02-24 Silicon Integrated Systems Corp. Dual damascene process using metal hard mask
WO2003021659A1 (en) 2001-09-04 2003-03-13 Applied Materials, Inc. Methods and apparatus for etching metal layers on substrates
US6864180B2 (en) * 2001-10-02 2005-03-08 International Business Machines Corporation Method for reworking low-k polymers used in semiconductor structures
US6753260B1 (en) * 2001-10-05 2004-06-22 Taiwan Semiconductor Manufacturing Company Composite etching stop in semiconductor process integration
US7482694B2 (en) * 2002-04-03 2009-01-27 Nec Coporation Semiconductor device and its manufacturing method
WO2003089990A2 (en) * 2002-04-19 2003-10-30 Applied Materials, Inc. Process for etching photomasks
US6933246B2 (en) * 2002-06-14 2005-08-23 Trikon Technologies Limited Dielectric film
US6831019B1 (en) * 2002-08-29 2004-12-14 Micron Technology, Inc. Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes
WO2004086143A2 (en) * 2003-03-21 2004-10-07 Applied Materials, Inc. Multi-step process for etching photomasks
US7077973B2 (en) * 2003-04-18 2006-07-18 Applied Materials, Inc. Methods for substrate orientation
US7521000B2 (en) * 2003-08-28 2009-04-21 Applied Materials, Inc. Process for etching photomasks
US20070186953A1 (en) * 2004-07-12 2007-08-16 Savas Stephen E Systems and Methods for Photoresist Strip and Residue Treatment in Integrated Circuit Manufacturing
US7829243B2 (en) * 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
JP2007123399A (ja) * 2005-10-26 2007-05-17 Hitachi High-Technologies Corp ドライエッチング方法
US7517804B2 (en) * 2006-08-31 2009-04-14 Micron Technologies, Inc. Selective etch chemistries for forming high aspect ratio features and associated structures
KR100944846B1 (ko) * 2006-10-30 2010-03-04 어플라이드 머티어리얼스, 인코포레이티드 마스크 에칭 프로세스
US8003522B2 (en) * 2007-12-19 2011-08-23 Fairchild Semiconductor Corporation Method for forming trenches with wide upper portion and narrow lower portion

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JPS5887824A (ja) * 1981-11-20 1983-05-25 Toshiba Corp 微細加工方法
DE3275447D1 (en) * 1982-07-03 1987-03-19 Ibm Deutschland Process for the formation of grooves having essentially vertical lateral silicium walls by reactive ion etching
US4529860A (en) * 1982-08-02 1985-07-16 Motorola, Inc. Plasma etching of organic materials
JPS59163826A (ja) * 1983-03-08 1984-09-14 Toshiba Corp ドライエツチング方法
JPS60170238A (ja) * 1984-02-15 1985-09-03 Toyota Central Res & Dev Lab Inc ドライエツチング方法
US4855017A (en) * 1985-05-03 1989-08-08 Texas Instruments Incorporated Trench etch process for a single-wafer RIE dry etch reactor
US5273609A (en) * 1990-09-12 1993-12-28 Texas Instruments Incorporated Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment
US5217920A (en) * 1992-06-18 1993-06-08 Motorola, Inc. Method of forming substrate contact trenches and isolation trenches using anodization for isolation
US5213989A (en) * 1992-06-24 1993-05-25 Motorola, Inc. Method for forming a grown bipolar electrode contact using a sidewall seed
US5350484A (en) * 1992-09-08 1994-09-27 Intel Corporation Method for the anisotropic etching of metal films in the fabrication of interconnects
US5562801A (en) * 1994-04-28 1996-10-08 Cypress Semiconductor Corporation Method of etching an oxide layer
US5468342A (en) * 1994-04-28 1995-11-21 Cypress Semiconductor Corp. Method of etching an oxide layer
US5569355A (en) * 1995-01-11 1996-10-29 Center For Advanced Fiberoptic Applications Method for fabrication of microchannel electron multipliers

Also Published As

Publication number Publication date
JP2002522922A (ja) 2002-07-23
EP1116265A1 (de) 2001-07-18
KR20010079655A (ko) 2001-08-22
US6114250A (en) 2000-09-05
WO2000010199A1 (en) 2000-02-24

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