IL140301A0 - Chemical mechanical polishing slurry and method for using same - Google Patents
Chemical mechanical polishing slurry and method for using sameInfo
- Publication number
- IL140301A0 IL140301A0 IL14030199A IL14030199A IL140301A0 IL 140301 A0 IL140301 A0 IL 140301A0 IL 14030199 A IL14030199 A IL 14030199A IL 14030199 A IL14030199 A IL 14030199A IL 140301 A0 IL140301 A0 IL 140301A0
- Authority
- IL
- Israel
- Prior art keywords
- same
- mechanical polishing
- chemical mechanical
- polishing slurry
- slurry
- Prior art date
Links
- 238000000034 method Methods 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
- 239000002002 slurry Substances 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/105,060 US6533832B2 (en) | 1998-06-26 | 1998-06-26 | Chemical mechanical polishing slurry and method for using same |
PCT/US1999/014558 WO2000000560A2 (en) | 1998-06-26 | 1999-06-25 | Chemical mechanical polishing slurry and method for using same |
Publications (1)
Publication Number | Publication Date |
---|---|
IL140301A0 true IL140301A0 (en) | 2002-02-10 |
Family
ID=22303838
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL14030199A IL140301A0 (en) | 1998-06-26 | 1999-06-25 | Chemical mechanical polishing slurry and method for using same |
Country Status (11)
Country | Link |
---|---|
US (2) | US6533832B2 (xx) |
EP (1) | EP1144527A3 (xx) |
JP (1) | JP2002525383A (xx) |
KR (1) | KR20010043998A (xx) |
CN (1) | CN1315989A (xx) |
AU (1) | AU5313099A (xx) |
CA (1) | CA2335035A1 (xx) |
ID (1) | ID28272A (xx) |
IL (1) | IL140301A0 (xx) |
TW (1) | TW512169B (xx) |
WO (1) | WO2000000560A2 (xx) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040134873A1 (en) * | 1996-07-25 | 2004-07-15 | Li Yao | Abrasive-free chemical mechanical polishing composition and polishing process containing same |
US6533832B2 (en) * | 1998-06-26 | 2003-03-18 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry and method for using same |
US20040055993A1 (en) * | 1999-10-12 | 2004-03-25 | Moudgil Brij M. | Materials and methods for control of stability and rheological behavior of particulate suspensions |
WO2001078116A2 (en) * | 2000-04-11 | 2001-10-18 | Cabot Microelectronics Corporation | System for the preferential removal of silicon oxide |
KR100378180B1 (ko) | 2000-05-22 | 2003-03-29 | 삼성전자주식회사 | 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법 |
US6762132B1 (en) * | 2000-08-31 | 2004-07-13 | Micron Technology, Inc. | Compositions for dissolution of low-K dielectric films, and methods of use |
US6612911B2 (en) | 2001-01-16 | 2003-09-02 | Cabot Microelectronics Corporation | Alkali metal-containing polishing system and method |
US20040159050A1 (en) * | 2001-04-30 | 2004-08-19 | Arch Specialty Chemicals, Inc. | Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers |
TW591089B (en) * | 2001-08-09 | 2004-06-11 | Cheil Ind Inc | Slurry composition for use in chemical mechanical polishing of metal wiring |
US6953389B2 (en) * | 2001-08-09 | 2005-10-11 | Cheil Industries, Inc. | Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching |
JP2003142435A (ja) * | 2001-10-31 | 2003-05-16 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
US6660638B1 (en) * | 2002-01-03 | 2003-12-09 | Taiwan Semiconductor Manufacturing Company | CMP process leaving no residual oxide layer or slurry particles |
JP2003218069A (ja) * | 2002-01-23 | 2003-07-31 | Fujimi Inc | 半導体デバイス製造に用いる、シリコンを選択的に研磨することができる研磨用組成物 |
US7199056B2 (en) * | 2002-02-08 | 2007-04-03 | Applied Materials, Inc. | Low cost and low dishing slurry for polysilicon CMP |
KR100474545B1 (ko) * | 2002-05-17 | 2005-03-08 | 주식회사 하이닉스반도체 | 플래쉬 메모리 소자의 형성 방법 |
KR100506056B1 (ko) * | 2002-06-24 | 2005-08-05 | 주식회사 하이닉스반도체 | 산화막용 cmp 슬러리 조성물 및 이를 이용한 반도체소자의 형성 방법 |
JP2004266155A (ja) * | 2003-03-03 | 2004-09-24 | Jsr Corp | 化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法 |
US6803353B2 (en) * | 2002-11-12 | 2004-10-12 | Atofina Chemicals, Inc. | Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents |
JP2004247428A (ja) * | 2003-02-12 | 2004-09-02 | Fujimi Inc | 研磨用組成物及びそれを用いる研磨方法 |
US7018560B2 (en) * | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
US7253111B2 (en) * | 2004-04-21 | 2007-08-07 | Rohm And Haas Electronic Materials Cmp Holding, Inc. | Barrier polishing solution |
US7531105B2 (en) * | 2004-11-05 | 2009-05-12 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
US7504044B2 (en) | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
US20060110923A1 (en) * | 2004-11-24 | 2006-05-25 | Zhendong Liu | Barrier polishing solution |
US7086935B2 (en) * | 2004-11-24 | 2006-08-08 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cellulose-containing polishing compositions and methods relating thereto |
KR100497413B1 (ko) * | 2004-11-26 | 2005-06-23 | 에이스하이텍 주식회사 | 텅스텐-화학적 기계적 연마에 유용한 슬러리 및 그 제조방법 |
US7351662B2 (en) * | 2005-01-07 | 2008-04-01 | Dupont Air Products Nanomaterials Llc | Composition and associated method for catalyzing removal rates of dielectric films during chemical mechanical planarization |
US20060205218A1 (en) * | 2005-03-09 | 2006-09-14 | Mueller Brian L | Compositions and methods for chemical mechanical polishing thin films and dielectric materials |
JP2007103515A (ja) * | 2005-09-30 | 2007-04-19 | Fujimi Inc | 研磨方法 |
US7585340B2 (en) * | 2006-04-27 | 2009-09-08 | Cabot Microelectronics Corporation | Polishing composition containing polyether amine |
WO2007130350A1 (en) * | 2006-05-02 | 2007-11-15 | Cabot Microelectronics Corporation | Compositions and methods for cmp of semiconductor materials |
CN100462203C (zh) * | 2006-06-09 | 2009-02-18 | 河北工业大学 | Ulsi多层铜布线化学机械抛光中粗糙度的控制方法 |
US7629258B2 (en) | 2006-11-22 | 2009-12-08 | Clarkson University | Method for one-to-one polishing of silicon nitride and silicon oxide |
US20080116171A1 (en) * | 2006-11-22 | 2008-05-22 | Clarkson University | Method For The Preferential Polishing Of Silicon Nitride Versus Silicon Oxide |
US7723234B2 (en) * | 2006-11-22 | 2010-05-25 | Clarkson University | Method for selective CMP of polysilicon |
KR101564676B1 (ko) | 2008-02-01 | 2015-11-02 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 및 이를 이용한 연마 방법 |
US8232208B2 (en) * | 2010-06-15 | 2012-07-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stabilized chemical mechanical polishing composition and method of polishing a substrate |
JP5187536B2 (ja) * | 2010-06-22 | 2013-04-24 | Jsr株式会社 | 化学機械研磨用水系分散体 |
TWI465556B (zh) * | 2010-09-14 | 2014-12-21 | Everlight Chem Ind Corp | 用於粗拋晶圓之研磨組成物 |
CN102559065A (zh) * | 2012-03-15 | 2012-07-11 | 南昌大学 | 一种硅片化学机械抛光浆料配方 |
JP5403300B2 (ja) * | 2012-10-05 | 2014-01-29 | Jsr株式会社 | 化学機械研磨用水系分散体 |
US9279067B2 (en) * | 2013-10-10 | 2016-03-08 | Cabot Microelectronics Corporation | Wet-process ceria compositions for polishing substrates, and methods related thereto |
JP2018511413A (ja) * | 2015-04-13 | 2018-04-26 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 袋なし電気掃除機 |
KR20170044522A (ko) * | 2015-10-15 | 2017-04-25 | 삼성전자주식회사 | 화학적 기계적 연마용 슬러리 조성물, 그의 제조 방법, 그를 이용한 연마 방법 |
US20180244955A1 (en) | 2017-02-28 | 2018-08-30 | Versum Materials Us, Llc | Chemical Mechanical Planarization of Films Comprising Elemental Silicon |
US11472984B1 (en) | 2021-09-27 | 2022-10-18 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of enhancing the removal rate of polysilicon |
Family Cites Families (32)
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DE2305188A1 (de) | 1973-02-02 | 1974-08-08 | Wacker Chemitronic | Verfahren zur herstellung von polierten halbleiteroberflaechen |
SE400581B (sv) | 1974-12-13 | 1978-04-03 | Nordnero Ab | Bad for kemisk polering av koppar och dess legeringar |
US4169337A (en) | 1978-03-30 | 1979-10-02 | Nalco Chemical Company | Process for polishing semi-conductor materials |
US4462188A (en) | 1982-06-21 | 1984-07-31 | Nalco Chemical Company | Silica sol compositions for polishing silicon wafers |
GB8329881D0 (en) * | 1983-11-09 | 1983-12-14 | Shell Int Research | Preparation of binders for coatings |
US4588421A (en) | 1984-10-15 | 1986-05-13 | Nalco Chemical Company | Aqueous silica compositions for polishing silicon wafers |
US4900857A (en) * | 1987-03-30 | 1990-02-13 | Ppg Industries, Inc. | Phosphorus-containing organo silanes |
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JP2734839B2 (ja) | 1991-10-09 | 1998-04-02 | シャープ株式会社 | アルミニウム用エッチング液およびエッチング方法並びにアルミニウムエッチング製品 |
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US5527423A (en) | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
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US5860848A (en) | 1995-06-01 | 1999-01-19 | Rodel, Inc. | Polishing silicon wafers with improved polishing slurries |
US5614444A (en) | 1995-06-06 | 1997-03-25 | Sematech, Inc. | Method of using additives with silica-based slurries to enhance selectivity in metal CMP |
DE69611653T2 (de) | 1995-11-10 | 2001-05-03 | Tokuyama Corp | Poliersuspensionen und Verfahren zu ihrer Herstellung |
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US5769689A (en) | 1996-02-28 | 1998-06-23 | Rodel, Inc. | Compositions and methods for polishing silica, silicates, and silicon nitride |
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MY133700A (en) | 1996-05-15 | 2007-11-30 | Kobe Steel Ltd | Polishing fluid composition and polishing method |
EP0939431B1 (en) * | 1996-09-30 | 2009-05-20 | Hitachi Chemical Co., Ltd. | Cerium oxide abrasive and method of abrading substrates |
US5876266A (en) | 1997-07-15 | 1999-03-02 | International Business Machines Corporation | Polishing pad with controlled release of desired micro-encapsulated polishing agents |
US6190237B1 (en) * | 1997-11-06 | 2001-02-20 | International Business Machines Corporation | pH-buffered slurry and use thereof for polishing |
US6063306A (en) * | 1998-06-26 | 2000-05-16 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrate |
US6533832B2 (en) * | 1998-06-26 | 2003-03-18 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry and method for using same |
-
1998
- 1998-06-26 US US09/105,060 patent/US6533832B2/en not_active Expired - Fee Related
-
1999
- 1999-06-25 EP EP99938707A patent/EP1144527A3/en not_active Withdrawn
- 1999-06-25 IL IL14030199A patent/IL140301A0/xx unknown
- 1999-06-25 TW TW088110750A patent/TW512169B/zh not_active IP Right Cessation
- 1999-06-25 WO PCT/US1999/014558 patent/WO2000000560A2/en not_active Application Discontinuation
- 1999-06-25 CN CN99808305A patent/CN1315989A/zh active Pending
- 1999-06-25 ID IDW20010175A patent/ID28272A/id unknown
- 1999-06-25 CA CA002335035A patent/CA2335035A1/en not_active Abandoned
- 1999-06-25 JP JP2000557315A patent/JP2002525383A/ja active Pending
- 1999-06-25 AU AU53130/99A patent/AU5313099A/en not_active Abandoned
- 1999-06-25 KR KR1020007014729A patent/KR20010043998A/ko not_active Application Discontinuation
-
2003
- 2003-01-23 US US10/349,987 patent/US20030143848A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
AU5313099A (en) | 2000-01-17 |
ID28272A (id) | 2001-05-10 |
EP1144527A2 (en) | 2001-10-17 |
US6533832B2 (en) | 2003-03-18 |
WO2000000560A2 (en) | 2000-01-06 |
JP2002525383A (ja) | 2002-08-13 |
EP1144527A3 (en) | 2002-03-13 |
CN1315989A (zh) | 2001-10-03 |
CA2335035A1 (en) | 2000-01-06 |
US20020032987A1 (en) | 2002-03-21 |
US20030143848A1 (en) | 2003-07-31 |
KR20010043998A (ko) | 2001-05-25 |
TW512169B (en) | 2002-12-01 |
WO2000000560A3 (en) | 2001-12-13 |
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