ID28272A - Sluri pengkilap secara mekanik kimia dan metode untuk menggunakan sluri yang sama - Google Patents

Sluri pengkilap secara mekanik kimia dan metode untuk menggunakan sluri yang sama

Info

Publication number
ID28272A
ID28272A IDW20010175A ID20010175A ID28272A ID 28272 A ID28272 A ID 28272A ID W20010175 A IDW20010175 A ID W20010175A ID 20010175 A ID20010175 A ID 20010175A ID 28272 A ID28272 A ID 28272A
Authority
ID
Indonesia
Prior art keywords
sluri
slimmer
methods
same
mechanical chemical
Prior art date
Application number
IDW20010175A
Other languages
English (en)
Inventor
J Scott Steckenrider
Brian L Mueller
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of ID28272A publication Critical patent/ID28272A/id

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
IDW20010175A 1998-06-26 1999-06-25 Sluri pengkilap secara mekanik kimia dan metode untuk menggunakan sluri yang sama ID28272A (id)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/105,060 US6533832B2 (en) 1998-06-26 1998-06-26 Chemical mechanical polishing slurry and method for using same

Publications (1)

Publication Number Publication Date
ID28272A true ID28272A (id) 2001-05-10

Family

ID=22303838

Family Applications (1)

Application Number Title Priority Date Filing Date
IDW20010175A ID28272A (id) 1998-06-26 1999-06-25 Sluri pengkilap secara mekanik kimia dan metode untuk menggunakan sluri yang sama

Country Status (11)

Country Link
US (2) US6533832B2 (id)
EP (1) EP1144527A3 (id)
JP (1) JP2002525383A (id)
KR (1) KR20010043998A (id)
CN (1) CN1315989A (id)
AU (1) AU5313099A (id)
CA (1) CA2335035A1 (id)
ID (1) ID28272A (id)
IL (1) IL140301A0 (id)
TW (1) TW512169B (id)
WO (1) WO2000000560A2 (id)

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US20040055993A1 (en) * 1999-10-12 2004-03-25 Moudgil Brij M. Materials and methods for control of stability and rheological behavior of particulate suspensions
CN1422314A (zh) * 2000-04-11 2003-06-04 卡伯特微电子公司 用于优先除去氧化硅的系统
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US6762132B1 (en) * 2000-08-31 2004-07-13 Micron Technology, Inc. Compositions for dissolution of low-K dielectric films, and methods of use
US6612911B2 (en) 2001-01-16 2003-09-02 Cabot Microelectronics Corporation Alkali metal-containing polishing system and method
US20040159050A1 (en) * 2001-04-30 2004-08-19 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
US6953389B2 (en) * 2001-08-09 2005-10-11 Cheil Industries, Inc. Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching
TW591089B (en) * 2001-08-09 2004-06-11 Cheil Ind Inc Slurry composition for use in chemical mechanical polishing of metal wiring
JP2003142435A (ja) * 2001-10-31 2003-05-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US6660638B1 (en) * 2002-01-03 2003-12-09 Taiwan Semiconductor Manufacturing Company CMP process leaving no residual oxide layer or slurry particles
JP2003218069A (ja) * 2002-01-23 2003-07-31 Fujimi Inc 半導体デバイス製造に用いる、シリコンを選択的に研磨することができる研磨用組成物
US7199056B2 (en) * 2002-02-08 2007-04-03 Applied Materials, Inc. Low cost and low dishing slurry for polysilicon CMP
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KR100506056B1 (ko) * 2002-06-24 2005-08-05 주식회사 하이닉스반도체 산화막용 ｃｍｐ 슬러리 조성물 및 이를 이용한 반도체소자의 형성 방법
JP2004266155A (ja) * 2003-03-03 2004-09-24 Jsr Corp 化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法
US6803353B2 (en) * 2002-11-12 2004-10-12 Atofina Chemicals, Inc. Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents
JP2004247428A (ja) * 2003-02-12 2004-09-02 Fujimi Inc 研磨用組成物及びそれを用いる研磨方法
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7504044B2 (en) 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7086935B2 (en) * 2004-11-24 2006-08-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cellulose-containing polishing compositions and methods relating thereto
US20060110923A1 (en) * 2004-11-24 2006-05-25 Zhendong Liu Barrier polishing solution
KR100497413B1 (ko) * 2004-11-26 2005-06-23 에이스하이텍 주식회사 텅스텐-화학적 기계적 연마에 유용한 슬러리 및 그 제조방법
US7351662B2 (en) * 2005-01-07 2008-04-01 Dupont Air Products Nanomaterials Llc Composition and associated method for catalyzing removal rates of dielectric films during chemical mechanical planarization
US20060205218A1 (en) * 2005-03-09 2006-09-14 Mueller Brian L Compositions and methods for chemical mechanical polishing thin films and dielectric materials
JP2007103515A (ja) * 2005-09-30 2007-04-19 Fujimi Inc 研磨方法
US7585340B2 (en) * 2006-04-27 2009-09-08 Cabot Microelectronics Corporation Polishing composition containing polyether amine
CN101437918B (zh) * 2006-05-02 2012-11-21 卡伯特微电子公司 用于半导体材料的化学机械抛光的组合物及方法
CN100462203C (zh) * 2006-06-09 2009-02-18 河北工业大学 Ulsi多层铜布线化学机械抛光中粗糙度的控制方法
US7723234B2 (en) * 2006-11-22 2010-05-25 Clarkson University Method for selective CMP of polysilicon
US20080116171A1 (en) * 2006-11-22 2008-05-22 Clarkson University Method For The Preferential Polishing Of Silicon Nitride Versus Silicon Oxide
US7629258B2 (en) 2006-11-22 2009-12-08 Clarkson University Method for one-to-one polishing of silicon nitride and silicon oxide
KR101564676B1 (ko) 2008-02-01 2015-11-02 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 이를 이용한 연마 방법
US8232208B2 (en) * 2010-06-15 2012-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized chemical mechanical polishing composition and method of polishing a substrate
JP5187536B2 (ja) * 2010-06-22 2013-04-24 Ｊｓｒ株式会社 化学機械研磨用水系分散体
TWI465556B (zh) * 2010-09-14 2014-12-21 Everlight Chem Ind Corp 用於粗拋晶圓之研磨組成物
CN102559065A (zh) * 2012-03-15 2012-07-11 南昌大学 一种硅片化学机械抛光浆料配方
JP5403300B2 (ja) * 2012-10-05 2014-01-29 Ｊｓｒ株式会社 化学機械研磨用水系分散体
US9279067B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
US20180140149A1 (en) * 2015-04-13 2018-05-24 Koninklijke Philips N.V. Bagless vacuum cleaner
KR20170044522A (ko) * 2015-10-15 2017-04-25 삼성전자주식회사 화학적 기계적 연마용 슬러리 조성물, 그의 제조 방법, 그를 이용한 연마 방법
US20180244955A1 (en) 2017-02-28 2018-08-30 Versum Materials Us, Llc Chemical Mechanical Planarization of Films Comprising Elemental Silicon
US11472984B1 (en) 2021-09-27 2022-10-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of enhancing the removal rate of polysilicon

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Also Published As

Publication number Publication date
TW512169B (en) 2002-12-01
CA2335035A1 (en) 2000-01-06
IL140301A0 (en) 2002-02-10
CN1315989A (zh) 2001-10-03
KR20010043998A (ko) 2001-05-25
EP1144527A2 (en) 2001-10-17
AU5313099A (en) 2000-01-17
US20030143848A1 (en) 2003-07-31
JP2002525383A (ja) 2002-08-13
US20020032987A1 (en) 2002-03-21
EP1144527A3 (en) 2002-03-13
WO2000000560A2 (en) 2000-01-06
US6533832B2 (en) 2003-03-18
WO2000000560A3 (en) 2001-12-13

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