IL125303A - Method and arrangement for poling of optical crystals - Google Patents
Method and arrangement for poling of optical crystalsInfo
- Publication number
- IL125303A IL125303A IL12530397A IL12530397A IL125303A IL 125303 A IL125303 A IL 125303A IL 12530397 A IL12530397 A IL 12530397A IL 12530397 A IL12530397 A IL 12530397A IL 125303 A IL125303 A IL 125303A
- Authority
- IL
- Israel
- Prior art keywords
- crystal
- conductivity
- ion exchange
- crystals
- light
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 188
- 238000000034 method Methods 0.000 title claims abstract description 68
- 230000003287 optical effect Effects 0.000 title claims abstract description 25
- 230000000737 periodic effect Effects 0.000 claims abstract description 32
- 238000012544 monitoring process Methods 0.000 claims abstract description 10
- 238000005342 ion exchange Methods 0.000 claims description 41
- 230000005684 electric field Effects 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 230000010287 polarization Effects 0.000 claims description 12
- 239000002019 doping agent Substances 0.000 claims description 11
- 230000010363 phase shift Effects 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- 229910052701 rubidium Inorganic materials 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 5
- 229910052792 caesium Inorganic materials 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 150000002823 nitrates Chemical class 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- 230000009021 linear effect Effects 0.000 abstract description 11
- 230000005670 electromagnetic radiation Effects 0.000 abstract description 4
- 230000010355 oscillation Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 13
- 238000002474 experimental method Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000005693 optoelectronics Effects 0.000 description 6
- RTHYXYOJKHGZJT-UHFFFAOYSA-N rubidium nitrate Inorganic materials [Rb+].[O-][N+]([O-])=O RTHYXYOJKHGZJT-UHFFFAOYSA-N 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000006378 damage Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- IWOUKMZUPDVPGQ-UHFFFAOYSA-N barium nitrate Inorganic materials [Ba+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O IWOUKMZUPDVPGQ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000007716 flux method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- -1 Ba2+ ion Chemical class 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 229910001414 potassium ion Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 241001062472 Stokellia anisodon Species 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- WYOHGPUPVHHUGO-UHFFFAOYSA-K potassium;oxygen(2-);titanium(4+);phosphate Chemical compound [O-2].[K+].[Ti+4].[O-]P([O-])([O-])=O WYOHGPUPVHHUGO-UHFFFAOYSA-K 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3558—Poled materials, e.g. with periodic poling; Fabrication of domain inverted structures, e.g. for quasi-phase-matching [QPM]
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/14—Phosphates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Polarising Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9600140A SE9600140D0 (sv) | 1996-01-12 | 1996-01-12 | Processförfarande för optiska kristaller |
| SE9604264A SE9604264D0 (sv) | 1996-11-19 | 1996-11-19 | Icke-linjära kristaller |
| PCT/SE1997/000026 WO1997025648A1 (en) | 1996-01-12 | 1997-01-10 | Method and arrangement for poling of optical crystals |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL125303A0 IL125303A0 (en) | 1999-03-12 |
| IL125303A true IL125303A (en) | 2001-08-08 |
Family
ID=26662476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL12530397A IL125303A (en) | 1996-01-12 | 1997-01-10 | Method and arrangement for poling of optical crystals |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5986798A (enExample) |
| EP (1) | EP1015936B1 (enExample) |
| JP (1) | JP2000503138A (enExample) |
| CN (1) | CN1213436A (enExample) |
| AT (1) | ATE327523T1 (enExample) |
| AU (1) | AU733846B2 (enExample) |
| DE (1) | DE69735956T2 (enExample) |
| IL (1) | IL125303A (enExample) |
| WO (1) | WO1997025648A1 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL120203A (en) * | 1997-02-12 | 2000-08-31 | Israel Atomic Energy Comm | Method of fabrication of an invertedly poled domain structure from a ferroelectric crystal |
| JP3999362B2 (ja) * | 1998-07-13 | 2007-10-31 | 三菱電線工業株式会社 | 周期的分極反転構造を有する強誘電体結晶の製造方法 |
| GB2354597A (en) * | 1999-09-23 | 2001-03-28 | Christopher Noel Pannell | Ferroelectric acousto-optic devices |
| US6904066B2 (en) * | 2001-11-13 | 2005-06-07 | Yen-Chieh Huang | Optical parametric oscillator with distributed feedback grating or distributing Bragg reflector |
| US6900928B2 (en) | 2002-03-19 | 2005-05-31 | Hc Photonics Corporation | Method of patterning and fabricating poled dielectric microstructures within dielectric materials |
| US6856393B2 (en) | 2002-08-21 | 2005-02-15 | The Board Of Trustees Of The Leland Stanford University | Method of measuring a physical function using a composite function which includes the physical function and an arbitrary reference function |
| US7133134B2 (en) * | 2002-08-21 | 2006-11-07 | The Board Of Trustees Of The Leland Stanford Junior University | Method of measuring a physical function using a symmetric composite function |
| US6982999B1 (en) * | 2003-01-21 | 2006-01-03 | Picarro,Inc. | Multipass second harmonic generation |
| US7009750B1 (en) | 2002-10-25 | 2006-03-07 | Eclipse Energy Systems, Inc. | Apparatus and methods for modulating refractive index |
| JP4243995B2 (ja) * | 2003-08-21 | 2009-03-25 | 日本碍子株式会社 | 分極反転部の製造方法および光デバイス |
| JP4818122B2 (ja) * | 2003-11-25 | 2011-11-16 | ボード オブ トラスティーズ オブ ザ レランド スタンフォード ジュニア ユニバーシティ | 材料の光学非線形性プロファイルを決定するための方法 |
| US7145714B2 (en) * | 2004-07-26 | 2006-12-05 | Advr, Inc. | Segmented electrodes for poling of ferroelectric crystal materials |
| US20060280209A1 (en) * | 2005-02-11 | 2006-12-14 | Hans-Georg Treusch | Beam combining methods and devices with high output intensity |
| JP5158319B2 (ja) * | 2007-03-26 | 2013-03-06 | 株式会社リコー | 波長変換素子、レーザ装置、画像形成装置及び表示装置 |
| CN101582293B (zh) * | 2008-05-12 | 2012-05-30 | 台湾积体电路制造股份有限公司 | 内存元件及电源切断或启动程序中控制其字线信号的方法 |
| CN104613879B (zh) * | 2015-01-19 | 2018-03-20 | 无锡名谷科技有限公司 | 一种硅片厚度测量装置及测量方法 |
| CN106353948A (zh) * | 2016-09-29 | 2017-01-25 | 武汉工程大学 | 一种非线性光学晶体及其应用方法 |
| DE102017123755B4 (de) * | 2017-10-12 | 2020-12-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Laserdiodenbarrens und Laserdiodenbarren |
| DE102018108636A1 (de) | 2018-04-11 | 2019-10-17 | Universität Paderborn | Herstellung von Wellenleitern aus Materialien der KTP-Familie |
| CN110726673B (zh) * | 2018-07-17 | 2022-02-18 | 中国科学院福建物质结构研究所 | 用于铁电晶体相变检测的光学探针及其检测方法 |
| US10809594B2 (en) * | 2019-04-30 | 2020-10-20 | Shandong University | Kind of visible ultraviolet band optical frequency converter |
| CN117444381B (zh) * | 2023-11-02 | 2024-06-04 | 深圳技术大学 | 一种基于飞秒激光直写技术制备铌酸锂晶体表面导电微结构的方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69026766T2 (de) * | 1989-05-18 | 1996-11-28 | Sony Corp | Verfahren zur Kontrolle der ferroelektrischen Domänen eines nichtlinearen optischen Substrates |
| US5157754A (en) * | 1990-04-25 | 1992-10-20 | E. I. Du Pont De Nemours | Wavelength conversion by quasi phase matching and the manufacture and use of optical articles therefor |
| US5879590A (en) * | 1990-07-13 | 1999-03-09 | North American Philips Corporation | Low conductivity, doped KTIOPO4 and devices based thereon |
| JPH06242478A (ja) * | 1993-02-18 | 1994-09-02 | Fuji Photo Film Co Ltd | 強誘電体のドメイン反転構造形成方法 |
| JP3397433B2 (ja) * | 1994-03-17 | 2003-04-14 | パイオニア株式会社 | 分極反転層形成方法及び光波長変換素子 |
| US5519802A (en) * | 1994-05-09 | 1996-05-21 | Deacon Research | Method for making devices having a pattern poled structure and pattern poled structure devices |
| JPH086080A (ja) * | 1994-06-16 | 1996-01-12 | Eastman Kodak Co | 反転された強誘電性ドメイン領域の形成方法 |
| US5652674A (en) * | 1994-08-31 | 1997-07-29 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing domain-inverted region, optical wavelength conversion device utilizing such domain-inverted region and method for fabricating such device |
| US5756263A (en) * | 1995-05-30 | 1998-05-26 | Eastman Kodak Company | Method of inverting ferroelectric domains by application of controlled electric field |
| US5748361A (en) * | 1995-10-13 | 1998-05-05 | Eastman Kodak Company | Ferroelectric crystal having inverted domain structure |
| US5875053A (en) * | 1996-01-26 | 1999-02-23 | Sdl, Inc. | Periodic electric field poled crystal waveguides |
-
1997
- 1997-01-10 WO PCT/SE1997/000026 patent/WO1997025648A1/en not_active Ceased
- 1997-01-10 CN CN97192916A patent/CN1213436A/zh active Pending
- 1997-01-10 EP EP97900836A patent/EP1015936B1/en not_active Expired - Lifetime
- 1997-01-10 JP JP9525149A patent/JP2000503138A/ja not_active Ceased
- 1997-01-10 AU AU13257/97A patent/AU733846B2/en not_active Ceased
- 1997-01-10 DE DE69735956T patent/DE69735956T2/de not_active Expired - Lifetime
- 1997-01-10 AT AT97900836T patent/ATE327523T1/de not_active IP Right Cessation
- 1997-01-10 IL IL12530397A patent/IL125303A/en not_active IP Right Cessation
-
1998
- 1998-07-10 US US09/113,835 patent/US5986798A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1213436A (zh) | 1999-04-07 |
| DE69735956T2 (de) | 2007-05-10 |
| US5986798A (en) | 1999-11-16 |
| WO1997025648A1 (en) | 1997-07-17 |
| ATE327523T1 (de) | 2006-06-15 |
| EP1015936A1 (en) | 2000-07-05 |
| IL125303A0 (en) | 1999-03-12 |
| DE69735956D1 (de) | 2006-06-29 |
| AU1325797A (en) | 1997-08-01 |
| AU733846B2 (en) | 2001-05-31 |
| EP1015936B1 (en) | 2006-05-24 |
| JP2000503138A (ja) | 2000-03-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| EXP | Patent expired |